PIP3201-A

Philips Semiconductors Product data PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. PIP3201-A QUICK REFERENCE DATA SYMBOL IL SYMBOL VBG IL Tj RON PARAMETER Nominal load current (ISO) PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance Tj = 25˚C MIN. 9 MAX. 50 20 150 38 UNIT A UNIT V A ˚C mΩ APPLICATIONS General controller for driving lamps, motors, solenoids, heaters. FEATURES Vertical power TrenchMOS Low on-state resistance CMOS logic compatible Very low quiescent current Overtemperature protection Load current limiting Latched overload and short circuit protection Overvoltage and undervoltage shutdown with hysteresis On-state open circuit load detection Diagnostic status indication Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery, overvoltage and transient protection FUNCTIONAL BLOCK DIAGRAM BATT STATUS POWER MOSFET CONTROL & PROTECTION CIRCUITS LOAD GROUND RG INPUT Fig.1. Elements of the TOPFET HSS with internal ground resistor. PINNING - SOT263B-01 PIN 1 2 3 4 5 tab DESCRIPTION Ground Input Battery (+ve supply) Status PIN CONFIGURATION mb mb SYMBOL I S 12345 B TOPFET HSS G L Load connected to pin 3 Front view MBL267 Fig. 2. Fig. 3. May 2001 1 Rev 1.010 Philips Semiconductors Product data PowerMOS transistor TOPFET high side switch LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VBG IL PD Tstg Tj Tsold PARAMETER Continuous supply voltage Continuous load current Total power dissipation Storage temperature Continuous junction temperature1 Lead temperature Reverse battery voltages2 -VBG -VBG Continuous reverse voltage Peak reverse voltage Application information RI, RS External resistors3 Input and status II, IS II, IS Continuous currents Repetitive peak currents Inductive load clamping EBL Non-repetitive clamping energy δ ≤ 0.1, tp = 300 µs IL = 10 A, VBG = 16 V Tj = 150˚C prior to turn-off -5 -50 to limit input, status currents 3.2 during soldering Tmb ≤ 95˚C Tmb ≤ 25˚C CONDITIONS MIN. 0 -55 - PIP3201-A MAX. 50 20 67 175 150 260 UNIT V A W ˚C ˚C ˚C 16 32 V V kΩ 5 50 mA mA 150 mJ ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. 2 UNIT kV THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal resistance4 Rth j-mb Rth j-a Junction to mounting base Junction to ambient in free air 1.52 60 1.86 75 K/W K/W CONDITIONS MIN. TYP. MAX. UNIT 1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj rating must be observed. 3 To limit currents during reverse battery and transient overvoltages (positive or negative). 4 Of the output power MOS transistor. May 2001 2 Rev 1.010 Philips Semiconductors Product data PowerMOS transistor TOPFET high side switch STATIC CHARACTERISTICS Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. SYMBOL VBG VBL -VLG -VLG PARAMETER Clamping voltages Battery to ground Battery to load Negative load to ground Negative load voltage1 Supply voltage VBG Operating range 2 PIP3201-A CONDITIONS IG = 1 mA IL = IG = 1 mA IL = 10 mA IL = 10 A; tp = 300 µs battery to ground MIN. 50 50 18 20 TYP. 55 55 23 25 MAX. 65 65 28 30 UNIT V V V V 5.5 9 V ≤ VBG ≤ 16 V VLG = 0 V Tmb = 25˚C 4 - 35 V µA µA µA µA mA A IB IL IG IL Currents Quiescent current3 Off-state load current Operating current 5 6 9 0.1 0.1 2 - 20 2 20 1 4 - VBL = VBG Tmb = 25˚C IL = 0 A VBL = 0.5 V VBG 9 to 35 V 6V IL 10 A 10 A Tmb = 85˚C tp7 300 µs 300 µs Tmb 25˚C 150˚C 25˚C 150˚C Nominal load current Resistances RON RON On-state resistance On-state resistance 95 28 36 150 38 70 48 88 190 mΩ mΩ mΩ mΩ Ω RG Internal ground resistance IG = 10 mA 1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. 2 On-state resistance is increased if the supply voltage is less than 9 V. 3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load. 4 The measured current is in the load pin only. 5 This is the continuous current drawn from the supply with no load connected, but with the input high. 6 Defined as in ISO 10483-1. For comparison purposes only. 7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current. May 2001 3 Rev 1.010 Philips Semiconductors Product data PowerMOS transistor TOPFET high side switch INPUT CHARACTERISTICS PIP3201-A 9 V ≤ VBG ≤ 16 V. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. SYMBOL II VIG VIG(ON) VIG(OFF) ∆VIG II(ON) II(OFF) PARAMETER Input current Input clamping voltage Input turn-on threshold voltage Input turn-off threshold voltage Input turn-on hysteresis Input turn-on current Input turn-off current VIG = 3 V VIG = 1.5 V CONDITIONS VIG = 5 V II = 200 µA MIN. 20 5.5 1.5 10 TYP. 90 7 2.4 2.1 0.3 MAX. 160 8.5 3 100 UNIT µA V V V V µA µA STATUS CHARACTERISTICS The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE. SYMBOL VSG VSG PARAMETER Status clamping voltage Status low voltage CONDITIONS IS = 100 µA IS = 100 µA Tmb = 25˚C IS IS Status leakage current Status saturation current1 Application information RS External pull-up resistor 47 kΩ VSG = 5 V Tmb = 25˚C VSG = 5 V MIN. 5.5 2 TYP. 7 0.7 0.1 7 MAX. 8.5 1 0.8 15 1 12 UNIT V V V µA µA mA OPEN CIRCUIT DETECTION CHARACTERISTICS An open circuit load can be detected in the on-state. Refer to TRUTH TABLE. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typical is at Tmb = 25 ˚C. SYMBOL PARAMETER Open circuit detection IL(TO) ∆IL(TO) Low current detect threshold Tj = 25˚C Hysteresis CONDITIONS 9 V ≤ VBG ≤ 35 V 0.24 0.4 0.8 0.16 1.6 1.2 A A A MIN. TYP. MAX. UNIT 1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to prevent possible interference with normal operation of the device. May 2001 4 Rev 1.010 Philips Semiconductors Product data PowerMOS transistor TOPFET high side switch UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE. SYMBOL PARAMETER Undervoltage VBG(UV) ∆VBG(UV) Low supply threshold voltage1 Hysteresis Overvoltage VBG(OV) ∆VBG(OV) High supply threshold voltage2 Hysteresis 40 45 1 2 4.2 0.5 CONDITIONS MIN. TYP. PIP3201-A MAX. UNIT 5.5 - V V 50 - V V TRUTH TABLE ABNORMAL CONDITIONS DETECTED INPUT L H H H H H H SUPPLY UV X 0 0 1 0 0 0 OV X 0 0 0 1 0 0 LC X 0 1 X X 0 0 LOAD SC X 0 0 X 0 1 0 OT X 0 0 X 0 X 1 OFF ON ON OFF OFF OFF OFF H H L H H L L off on & normal on & low current detect supply undervoltage lockout supply overvoltage shutdown SC tripped OT shutdown3 LOAD OUTPUT STATUS DESCRIPTION KEY TO ABBREVIATIONS L H X 0 1 logic low logic high don’t care condition not present condition present UV OV LC SC OT undervoltage overvoltage low current or open circuit load short circuit overtemperature 1 Undervoltage sensor causes the device to switch off and reset. 2 Overvoltage sensor causes the device to switch off to protect its load. 3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD PROTECTION CHARACTERISTICS. May 2001 5 Rev 1.010 Philips Semiconductors Product data PowerMOS transistor TOPFET high side switch OVERLOAD PROTECTION CHARACTERISTICS PIP3201-A 5.5 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE. SYMBOL IL(lim) PARAMETER Overload protection Load current limiting Short circuit load protection Battery load threshold voltage1 Response time2 Overtemperature protection Tj(TO) ∆Tj(TO) Threshold junction temperature3 Hysteresis 150 170 190 ˚C VBL > VBL(TO) CONDITIONS VBL = VBG VBG ≥ 9 V MIN. 34 TYP. 45 MAX. 64 UNIT A VBL(TO) td sc VBG = 16 V VBG = 35 V 8 15 - 10 20 180 12 25 250 V V µs - 10 - ˚C SWITCHING CHARACTERISTICS Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω. SYMBOL td on dV/dton t on PARAMETER During turn-on Delay time Rate of rise of load voltage Total switching time During turn-off Delay time Rate of fall of load voltage Total switching time CONDITIONS from input going high to 10% VL 30% to 70% VL to 90% VL from input going low to 90% VL 70% to 30% VL to 10% VL 40 0.35 140 60 1 200 µs V/µs µs µs V/µs µs MIN. TYP. MAX. UNIT td off dV/dtoff t off - 55 0.6 85 80 1 120 CAPACITANCES Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V. designed in parameters. SYMBOL Cig Cbl Csg PARAMETER Input capacitance Output capacitance Status capacitance CONDITIONS VBG = 13 V VBL = 13 V VSG = 5 V MIN. TYP. 15 250 11 MAX. 20 350 15 UNIT pF pF pF 1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation. 2 Measured from when the input goes high. 3 After cooling below the reset temperature the switch will resume normal operation. May 2001 6 Rev 1.010 Philips Semiconductors Product data PowerMOS transistor TOPFET high side switch PIP3201-A 5 VBL IB II I VBG VSG RS IG IS S VIG B TOPFET HSS G IL L VLG IBG(ON) / mA 4 3 2 1 UNDERVOLTAGE SHUTDOWN CLAMPING OVERVOLTAGE SHUTDOWN OPERATING V IG = 5 V LOAD QUIESCENT VIG = 0 V 0 0 10 20 30 40 VBG / V 50 60 70 Fig.4. High side switch measurements schematic. (current and voltage conventions) Fig.7. Typical supply characteristics, 25 ˚C. IG = f(VBG); parameter VIG 80 RON / mOhm 40 38 RON / mOhm typ . 60 36 34 RON max VBG = 6 V 40 32 30 9 V =< VBG =< 35 V 20 28 26 24 22 0 -50 0 50 20 Tj / C O 100 150 200 1 10 100 VBG / V Fig.5. Typical on-state resistance, tp = 300 µs. RON = f(Tj); parameter VBG; condition IL = 10 A Fig.8. Typical on-state resistance,Tj = 25 ˚C. RON = f(VBG); condition IL = 10 A; tp = 300 µs 50 IL / A 3.0 IG / mA lL = 0 A VBG / V 40 >=8 7 6 5 2.5 2.0 1.5 30 lL > IL(TO) l >I L 9 V