PLB16004U

DISCRETE SEMICONDUCTORS DATA SHEET PLB16004U Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR • Interdigitated common-base structure provides high emitter efficiency • Gold metallization with barrier realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching networks allow an easier design of circuits. APPLICATIONS Intended for use in common-base class C power amplifiers at 1.6 GHz. 3 PLB16004U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. MODE OF OPERATION Class C (CW) f (GHz) 1.6 VCC (V) 28 PL (W) >4.5 Gp (dB) >8.5 ηC (%) >40 Zi; ZL (Ω) see Figs 5 and 6 PINNING - SOT437A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION handbook, 4 columns 1 c b e 2 Top view MAM112 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with base connected to flange. Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 18 2 Philips Semiconductors Product specification Microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VCEO VEBO IC Ptot Tstg Tj Tsld Note 1. Up to 0.3 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature soldering temperature t ≤ 10 s; note 1 Tmb = 75 °C RBE = 0 open base open collector CONDITIONS open emitter − − − − − − −65 − − PLB16004U MIN. MAX. 40 40 15 3 0.5 9 +150 200 235 UNIT V V V V A W °C °C °C handbook, halfpage 10 MLC457 P tot (W) 8 6 4 2 0 50 0 50 100 150 200 o T mb ( C) Fig.2 Power derating curve. 1997 Feb 18 3 Philips Semiconductors Product specification Microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICES V(BR)CBO V(BR)CES V(BR)EBO hFE PARAMETER collector cut-off current collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage DC current gain CONDITIONS RBE = 0; VCE = 30 V IC = 1 mA; IE = 0 IC = 1 mA; IE = 0 IC = 1 mA; IE = 0 IC = 300 mA; VCE = 5 V − 40 40 3 15 MIN. − − − PARAMETER thermal resistance from junction to mounting base CONDITIONS Tj = 100 °C PLB16004U MAX. 11 0.3 UNIT K/W K/W thermal resistance from mounting base to heatsink note 1 MAX. 200 V V V UNIT µA 100 APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common-base test circuit as shown in Fig.3. MODE OF OPERATION Class C (CW) f (GHz) 1.6 VCC (V) 28 PL (W) typ. 5 Gp (dB) typ. 10 ηC (%) typ. 50 Zi; ZL (Ω) see Figs 5 and 6 1997 Feb 18 4 Philips Semiconductors Product specification Microwave power transistor PLB16004U handbook, full pagewidth 30 30 2.5 3.0 2.5 2.0 5.0 8.0 7.8 2.5 5.0 6.5 16.0 40 1.1 2.5 4.0 4.0 3.0 5.8 4.0 4.0 18.5 40 1.1 MLC456 Dimensions in mm. Substrate: Teflon fibre glass. Thickness: 0.4 mm. Permittivity: εr = 2.55. Fig.3 Narrowband test circuit. handbook, halfpage 6 MLC458 PL (W) 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 P i (W) VCC = 28 V; f = 1.6 GHz. Fig.4 Load power as a function of input power. 1997 Feb 18 5 Philips Semiconductors Product specification Microwave power transistor PLB16004U 1 handbook, full pagewidth 0.5 2 Zi 0.2 1.6 GHz 1.2 GHz +j 0 –j 10 0.2 5 0.2 0.5 2 5 10 2 GHz 5 10 ∞ 0.5 1 VCC = 28 V; Zo = 50 Ω. 2 MLC459 Fig.5 Input impedance as a function of frequency; typical values. 1 handbook, full pagewidth 0.5 2 ZL 0.2 1.6 GHz 1.2 GHz 5 10 +j 0 –j 10 0.2 5 2 GHz 0.2 0.5 2 5 10 ∞ 0.5 1 VCC = 28 V; Zo = 50 Ω. 2 MLC460 Fig.6 Optimum load impedance as a function of frequency; typical values. 1997 Feb 18 6 Philips Semiconductors Product specification Microwave power transistor PACKAGE OUTLINE PLB16004U 19.1 max 0.13 max 2.3 2.0 seating plane 14.22 1 6.5 max 1.7 max 4.8 max 0.25 M 4.5 min O 3.3 3 6.5 6.2 2 1.7 max Dimensions in mm. Torque on screws: max. 0.5 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm. 4.5 min MBB945 Fig.7 SOT437A. 1997 Feb 18 7 Philips Semiconductors Product specification Microwave power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values PLB16004U This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 18 8 Philips Semiconductors Product specification Microwave power transistor NOTES PLB16004U 1997 Feb 18 9 Philips Semiconductors Product specification Microwave power transistor NOTES PLB16004U 1997 Feb 18 10 Philips Semiconductors Product specification Microwave power transistor NOTES PLB16004U 1997 Feb 18 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 18 Document order number: 9397 750 01777