PZM3.3NB2A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PZM-NA series Voltage regulator double diodes Product specification Supersedes data of 1999 Jun 02 1999 Jun 11 Philips Semiconductors Product specification Voltage regulator double diodes FEATURES • Total power dissipation: max. 220 mW per diode • Small plastic package suitable for surface mounted design • Working voltage: nom. 2.4 V and 15 V (E24 range). APPLICATIONS • General regulation functions. DESCRIPTION Low power general purpose voltage regulator double diodes in a SOT346 (SC59) plastic package, suitable for surface mounted design. handbook, halfpage PZM-NA series PINNING PIN 1 2 3 cathode cathode anode DESCRIPTION 3 3 1 2 1 Top view 2 MAM407 Fig.1 Simplified outline (SOT346; SC59) and symbol. MARKING TYPE NUMBER PZM2.4NBA PZM2.7NB2A PZM3.0NB2A PZM3.3NB2A PZM3.6NB2A PZM3.9NB2A PZM4.3NB2A PZM4.7NB2A PZM5.1NB2A PZM5.6NB2A MARKING CODE 2A4 2A7 3A0 3A3 3A6 3A9 4A3 4A7 5A1 5A6 TYPE NUMBER PZM6.2NB2A PZM6.8NB2A PZM7.5NB2A PZM8.2NB2A PZM9.1NB2A PZM10NB2A PZM11NB2A PZM12NB2A PZM13NB2A PZM15NB2A MARKING CODE 6A2 6A8 7A5 8A2 9A1 10A 11A 12A 13A 15A 1999 Jun 11 2 Philips Semiconductors Product specification Voltage regulator double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode IF IZSM P Tstg Tj Note 1. Device mounted on an FR4 printed circuit board with Cu clad 5 × 5 mm. THERMAL CHARACTERISTICS SYMBOL Rth j-s Rth j-a Notes 1. Solderpoint of cathode tab. 2. Device mounted on an FR4 printed circuit board with Cu clad 5 × 5 mm. PARAMETER thermal resistance from junction to soldering point thermal resistance from junction to ambient CONDITIONS one diode loaded; note 1 one diode loaded; note 2 continuous forward current non-repetitive peak current power dissipation; see note 1 storage temperature operating junction temperature tp = 100 µs; square wave Tamb = 25 °C − −65 − − PARAMETER CONDITIONS MIN. PZM-NA series MAX. UNIT 200 see Table 1 220 +150 150 mA mW °C °C VALUE 350 560 UNIT K/W K/W 1999 Jun 11 3 Philips Semiconductors Product specification Voltage regulator double diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current PZM2.4NBA PZM2.7NB2A PZM3.0NB2A PZM3.3NB2A PZM3.6NB2A PZM3.9NB2A PZM4.3NB2A PZM4.7NB2A PZM5.1NB2A PZM5.6NB2A PZM6.2NB2A PZM6.8NB2A PZM7.5NB2A PZM8.2NB2A PZM9.1NB2A PZM10NB2A PZM11NB2A PZM12NB2A PZM13NB2A PZM15NB2A VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1.5 V VR = 2.5 V VR = 3.0 V VR = 3.5 V VR = 4.0 V VR = 5.0 V VR = 6.0 V VR = 7.0 V VR = 8.0 V VR = 9.0 V VR = 10.0 V VR = 11.0 V CONDITIONS IF = 10 mA; see Fig.2 IF = 100 mA; see Fig.2 PZM-NA series MAX. 0.9 1.1 50 20 10 5 5 3 3 3 3 2 2 2 1 700 500 200 100 100 100 70 V V UNIT µA µA µA µA µA µA µA µA µA µA µA µA µA nA nA nA nA nA nA nA 1999 Jun 11 4 Philips Semiconductors Product specification Voltage regulator double diodes Table 1 Per type; PZM2.4N to PZM24N Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZ = 5 mA; tm = 40 ms; Tamb = 25 °C MIN. 2.4NBA 2.7NB2A 3.0NB2A 3.3NB2A 3.6NB2A 3.9NB2A 4.3NB2A 4.7NB2A 5.1NB2A 5.6NB2A 6.2NB2A 6.8NB2A 7.5NB2A 8.2NB2A 9.1NB2A 10NB2A 11NB2A 12NB2A 13NB2A 15NB2A 2.30 2.65 2.95 3.25 3.55 3.87 4.15 4.55 4.98 5.49 6.06 6.65 7.28 8.02 8.85 9.77 10.76 11.74 12.91 14.34 MAX. 2.60 2.90 3.20 3.50 3.80 4.10 4.34 4.75 5.20 5.73 6.33 6.93 7.60 8.36 9.23 10.21 11.22 12.24 13.49 14.98 DIFFERENTIAL RESISTANCE rdif (Ω) IZ = 1 mA TYP. 275 300 325 350 375 400 410 425 400 80 40 30 15 20 20 20 25 25 25 25 MAX. 400 450 500 500 500 500 600 500 480 400 150 80 80 80 100 150 150 150 170 200 IZ = 5 mA TYP. 70 75 80 85 85 85 80 50 40 15 6 6 2 2 2 2 2 2 2 3 MAX. 100 100 95 95 90 90 90 80 60 40 10 15 10 10 10 10 10 10 10 15 TEMP. COEFF. SZ (mV/K) at IZ = 5 mA TYP. −1.6 −2.0 −2.1 −2.4 −2.4 −2.5 −2.5 −1.4 −0.8 1.2 2.3 3.0 4.0 4.6 5.5 6.4 7.4 8.4 9.4 11.4 PZM-NA series PZM -XXX DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 MAX. 450 440 425 410 390 370 350 325 300 275 250 215 170 150 120 110 110 105 105 100 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs MAX. 8.00 8.00 8.00 8.00 8.00 8.00 8.00 8.00 8.00 8.00 8.00 8.00 3.50 3.50 3.50 3.50 3.00 3.00 2.50 2.00 1999 Jun 11 5 Philips Semiconductors Product specification Voltage regulator double diodes GRAPHICAL DATA PZM-NA series MBG781 MBG783 handbook, halfpage 300 handbook, halfpage 0 IF (mA) 200 SZ (mV/K) −1 4V3 3V9 3V6 100 −2 3V3 3V0 2V4 2V7 0 0.6 0.8 VF (V) 1.0 −3 0 20 40 IZ (mA) 60 Tj = 25 °C. PZM2.4NBA to PZM4.3NB2A. Tj = 25 °C to 150 °C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Temperature coefficient as a function of working current; typical values. MBG782 handbook, halfpage 10 12 SZ (mV/K) 5 11 10 9V1 8V2 7V5 6V8 handbook, halfpage 300 MDA988 P (mW) 200 6V2 5V6 5V1 4V7 100 0 −5 0 4 8 12 16 IZ (mA) 20 0 0 50 100 200 150 Tamb (°C) PZM4.7NB2A to PZM12NB2A. Tj = 25 °C to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. Fig.5 Power derating curve per diode. 1999 Jun 11 6 Philips Semiconductors Product specification Voltage regulator double diodes PACKAGE OUTLINE Plastic surface mounted package; 3 leads PZM-NA series SOT346 E D B A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.3 1.0 A1 0.1 0.013 bp 0.50 0.35 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 1.9 e1 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 OUTLINE VERSION SOT346 REFERENCES IEC JEDEC TO-236 EIAJ SC-59 EUROPEAN PROJECTION ISSUE DATE 98-07-17 1999 Jun 11 7 Philips Semiconductors Product specification Voltage regulator double diodes DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values PZM-NA series This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Jun 11 8 Philips Semiconductors Product specification Voltage regulator double diodes NOTES PZM-NA series 1999 Jun 11 9 Philips Semiconductors Product specification Voltage regulator double diodes NOTES PZM-NA series 1999 Jun 11 10 Philips Semiconductors Product specification Voltage regulator double diodes NOTES PZM-NA series 1999 Jun 11 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/04/pp12 Date of release: 1999 Jun 11 Document order number: 9397 750 06096