UAA2080T

INTEGRATED CIRCUITS DATA SHEET UAA2080 Advanced pager receiver Product specification Supersedes data of 1995 Nov 27 File under Integrated Circuits, IC03 1996 Jan 15 Philips Semiconductors Product specification Advanced pager receiver FEATURES • Wide frequency range: VHF, UHF and 900 MHz bands • High sensitivity • High dynamic range • Electronically adjustable filters on chip • Suitable for data rates up to 2400 bits/s • Wide frequency offset and deviation range • Fully POCSAG compatible FSK receiver • Power on/off mode selectable by the chip enable input • Low supply voltage; low power consumption • High integration level • Interfaces directly to the PCA5000A, PCF5001 and PCD5003 POCSAG decoders. APPLICATIONS • Wide area paging • On-site paging • Telemetry • RF security systems • Low bit-rate wireless data links. ORDERING INFORMATION TYPE NUMBER UAA2080H UAA2080T UAA2080U PACKAGE NAME LQFP32 SO28 28 pads DESCRIPTION plastic low profile quad flat package; 32 leads; body 7 × 7 × 1.4 mm plastic small outline package; 28 leads; body width 7.5 mm naked die; see Fig.9 GENERAL DESCRIPTION UAA2080 The UAA2080 is a high-performance low-power radio receiver circuit primarily intended for VHF, UHF and 900 MHz pager receivers for wide area digital paging systems, employing direct FM non-return-to-zero (NRZ) frequency shift keying (FSK). The receiver design is based on the direct conversion principle where the input signal is mixed directly down to the baseband by a local oscillator on the signal frequency. Two complete signal paths with signals of 90° phase difference are required to demodulate the signal. All channel selectivity is provided by the built-in IF filters. The circuit makes extensive use of on-chip capacitors to minimize the number of external components. The UAA2080 was designed to operate together with the PCA5000A, PCF5001 or PCD5003 POCSAG decoders, which contain a digital input filter for optimum call success rate. VERSION SOT358-1 SOT136-1 1996 Jan 15 2 Philips Semiconductors Product specification Advanced pager receiver QUICK REFERENCE DATA SYMBOL VP IP IP(off) Pi(ref) PARAMETER supply voltage supply current stand-by current RF input sensitivity BER ≤ 100; ±4 kHz deviation; data rate 1200 bits/s; Tamb = 25 °C fi(RF) = 173 MHz fi(RF) = 470 MHz fi(RF) = 930 MHz Pi(mix) mixer input sensitivity BER ≤ 100; fi(RF) = 470 MHz; ±4 kHz deviation; data rate 1200 bits/s; Tamb = 25 °C 3⁄ 3⁄ UAA2080 CONDITIONS MIN. 1.9 2.3 − TYP. 2.05 2.7 − MAX. 3.5 3.2 3 UNIT V mA µA − − − − −126.5 −123.5 dBm −124.5 −121.5 dBm −120.0 −114.0 dBm −115.0 −110.0 dBm Vth Tamb detection threshold for battery LOW indicator operating ambient temperature 1.95 −10 2.05 − 2.15 +70 V °C 1996 Jan 15 3 VP Pins 9, 17, 23 and 29 are not connected. Product specification UAA2080 Fig.1 Block, test and application diagram drawn for LQFP32; fi(RF) = 172.941 MHz. handbook, full pagewidth 1996 Jan 15 R5 1.8 kΩ XTAL L7 33 nH TDC GND3 31 30 28 27 26 25 C12 5 to 20 pF R4 2.2 kΩ 33 nH C16 13 to 50 pF C17 15 pF 32 C15 27 pF C14 1 nF R7 100 Ω C13 10 µF C19 1 nF R3 1.5 kΩ L6 L8 27 nH CRYSTAL OSCILLATOR 24 22 VP low noise amplifier Q 21 R2 47 kΩ BATTERY LOW INDICATOR LIMITER Q GYRATOR FILTER FILTER DEMODULATOR GYRATOR LIMITER I low noise amplifier I FILTER FILTER MIXER Q 19 18 BAND GAP REFERENCE VP 14 Vref ACTIVE 20 GND2 ACTIVE C18 1 nF Philips Semiconductors L9 560 nH Advanced pager receiver BLOCK AND TEST DIAGRAMS (173 MHz) TS FREQUENCY MULTIPLIER 1 BLI 2 to decoder DO 3 RE 4 4 RF pre-amplifier MIXER I 10 11 GND1 330 Ω R1 L2 L3 22 nH 22 nH C10 C5 1 nF 22 pF C7 8.2 pF C6 5 to 20 pF C8 8.2 pF C11 22 pF C9 8.2 pF 12 13 15 16 C4 1 nF VP TPI 5 IF testpoints TPQ C1 8.2 pF 6 V i(RF) 7 L1 43 nH C3 5 to 20 pF 8 UAA2080H L4 150 nH L5 150 nH C2 8.2 pF MLC700 L1 C1 43 nH 8.2 pF V i(RF) C2 8.2 pF V P handbook, full pagewidth 1996 Jan 15 BLI decoder DO RE 28 VP Philips Semiconductors Advanced pager receiver C18 1 nF L9 560 nH R5 1.8 kΩ C16 13 to 50 pF XTAL C17 L8 27 nH C15 27 pF R7 100 Ω C14 1 nF C13 10 µF L7 33 nH R3 1.5 kΩ L6 33 nH VP C 19 1 nF R2 TDC GND3 23 22 21 20 R4 2.2 kΩ 19 18 C12 5 to 20 pF 17 47 kΩ 16 15 TS 27 26 25 15 pF 24 BAND GAP REFERENCE CRYSTAL OSCILLATOR BATTERY LOW INDICATOR FREQUENCY MULTIPLIER Vref V P UAA2080T UAA2080U ACTIVE FILTER low noise amplifier Q GYRATOR DEMODULATOR LIMITER Q FILTER 5 GYRATOR LIMITER I FILTER FILTER low noise amplifier I MIXER I 1 TPI 2 TPQ 3 C3 5 to 20 pF 4 330 Ω 5 6 7 L3 L2 22 nH 22 nH 8 9 10 pF R1 GND1 C5 1 nF 8.2 pF C7 C8 8.2 pF 10 11 10 pF C10 C11 MIXER Q 12 L4 150 nH 13 14 GND2 L5 150 nH ACTIVE RF pre-amplifier IF testpoints C4 1 nF C6 5 to 20 pF C9 8.2 pF Product specification MLC701 UAA2080 Fig.2 Block, test and application diagram drawn for SO28 and naked die; fi(RF) = 172.941 MHz. Philips Semiconductors Product specification Advanced pager receiver Table 1 Tolerances of components shown in Figs 1 and 2 (notes 1 and 2) COMPONENT Inductances L1 L2, L3, L6, L7 L4, L5 L8 L9 Resistors R1 to R7 Capacitors C1, C2, C7, C8, C9, C15 C3, C6, C12 C4, C5, C14, C18, C19 C10, C11 C13 C16 C17 Notes ±5 − ±10 ±5 ±20 − ±5 TC = (0 ±30) × 10−6/K; tan δ ≤ 30 × 10−4 at 1 MHz ±2 TC = +50 × 10−6/K ±5 ±20 ±10 ±20 ±10 Qmin = 100 at 173 MHz TOLERANCE (%) REMARK UAA2080 Qmin = 50 at 173 MHz; TC = (+25 to +125) × 10−6/K Qmin = 30 at 173 MHz; TC = (+25 to +125) × 10−6/K Qmin = 30 at 173 MHz; TC = (+25 to +125) × 10−6/K Qmin = 30 at 57 MHz; TC = (+25 to +125) × 10−6/K TC = (−750 ±300) × 10−6/K; tan δ ≤ 50 × 10−4 at 1 MHz TC = (0 ±30) × 10−6/K; tan δ ≤ 10 × 10−4 at 1 MHz TC = (0 ±30) × 10−6/K; tan δ ≤ 21 × 10−4 at 1 MHz TC = (−1700 ±500) × 10−6/K; tan δ ≤ 50 × 10−4 at 1 MHz TC = (0 ±30) × 10−6/K; tan δ ≤ 26 × 10−4 at 1 MHz 1. Recommended crystal: fXTAL = 57.647 MHz (crystal with 8 pF load), 3rd overtone, pullability >2.75 × 10−6/pF (change in frequency between series resonance and resonance with 8 pF series capacitor at 25 °C), dynamic resistance R1 < 40 Ω, ∆f = ±5 × 10−6 for Tamb = −10 to +55 °C with 25 °C reference, calibration plus aging tolerance: −5 × 10−6 to +15 × 10−6. 2. This crystal recommendation is based on economic aspects and practical experience. Normally the spreads for R1, pullability and calibration do not show their worst case limits simultaneously in one crystal. In such a rare event, the tuning range will be reduced to an insufficient level. 1996 Jan 15 6 Product specification UAA2080 Fig.3 Block, test and application diagram drawn for LQFP32; fi(RF) = 469.95 MHz. handbook, full pagewidth 1996 Jan 15 VP C15 3 to 10 pF L7 8 nH R4 1.2 kΩ C12 2.5 to 6 pF 25 26 L6 8 nH TDC GND3 31 30 28 27 C14 1 nF C19 1 nF C13 10 µF R3 820 Ω R5 1.8 kΩ C16 13 to 50 pF XTAL C17 15 pF 32 L8 100 nH CRYSTAL OSCILLATOR 24 22 VP low noise amplifier Q 21 R2 47 kΩ BATTERY LOW INDICATOR LIMITER Q GYRATOR FILTER FILTER DEMODULATOR GYRATOR LIMITER I low noise amplifier I FILTER FILTER MIXER Q 19 18 BAND GAP REFERENCE VP 14 Vref ACTIVE 20 GND2 ACTIVE C18 1 nF Philips Semiconductors L9 560 nH Advanced pager receiver BLOCK AND TEST DIAGRAMS (470 MHz) TS 1 FREQUENCY MULTIPLIER BLI 2 to decoder DO 3 RE 4 7 RF pre-amplifier MIXER I 10 11 GND1 330 Ω R1 L2 8 nH L3 8 nH C10 C5 1 nF 22 pF C6 2.5 to 6 pF C7 2.7 pF C8 2.7 pF C11 22 pF C9 2.7 pF 12 13 15 16 C4 1 nF VP TPI 5 IF testpoints TPQ C1 2.7 pF 6 V i(RF) 7 L1 12.5 nH C3 2.5 to 6 pF 8 UAA2080H L4 40 nH L5 40 nH C2 2.7 pF MLC702 Pins 9, 17, 23 and 29 are not connected. C1 2.7 pF L1 12.5 nH C2 2.7 pF VP handbook, full pagewidth 1996 Jan 15 BLI decoder DO RE 28 VP Philips Semiconductors Advanced pager receiver C18 1 nF L9 560 nH R5 1.8 kΩ C16 13 to 50 pF XTAL C17 L8 100 nH VP C15 3 to 10 pF C14 1 nF C13 10 µF L7 8 nH R4 1.2 kΩ 19 R3 820 Ω L6 8 nH R2 TDC 47 kΩ 17 16 15 C 19 1 nF TS 27 26 25 15 pF 24 23 GND3 22 21 20 C12 2.5 to 6 pF 18 BAND GAP REFERENCE CRYSTAL OSCILLATOR BATTERY LOW INDICATOR FREQUENCY MULTIPLIER Vref VP UAA2080T UAA2080U ACTIVE FILTER low noise amplifier Q GYRATOR DEMODULATOR LIMITER Q FILTER 8 GYRATOR LIMITER I FILTER FILTER low noise amplifier I MIXER I 1 TPI 2 TPQ 3 C3 2.5 to 6 pF 4 330 Ω 5 6 7 L3 8 nH L2 8 nH 8 9 22 pF R1 GND1 C5 1 nF 2.7 pF C7 C8 2.7 pF 10 11 22 pF C10 C11 MIXER Q 12 L4 40 nH 13 14 GND2 L5 40 nH ACTIVE RF pre-amplifier IF testpoints C4 1 nF C6 2.5 to 6 pF C9 2.7 pF Product specification MLC703 UAA2080 V i(RF) Fig.4 Block, test and application diagram drawn for SO28 and naked die; fi(RF) = 469.95 MHz. Product specification UAA2080 Fig.5 Mixer input sensitivity test circuit; fi(RF) = 469.95 MHz. handbook, full pagewidth 1996 Jan 15 VP C15 3 to 10 pF L7 8 nH R4 1.2 kΩ C12 2.5 to 6 pF 25 26 L6 8 nH TDC GND3 31 30 28 27 C14 1 nF C19 1 nF C13 10 µF R3 820 Ω R5 1.8 kΩ C16 13 to 50 pF XTAL C17 15 pF 32 L8 100 nH CRYSTAL OSCILLATOR 24 22 VP low noise amplifier Q 21 R2 47 kΩ BATTERY LOW INDICATOR LIMITER Q GYRATOR FILTER FILTER DEMODULATOR GYRATOR LIMITER I low noise amplifier I FILTER FILTER MIXER Q 19 18 BAND GAP REFERENCE VP 14 Vref C10 22 pF V i(RF) C5 1 nF VP C21 5.6 pF C22 5.6 pF L10 12.5 nH C23 2.5 to 6 pF MLC704 C18 1 nF Philips Semiconductors L9 560 nH Advanced pager receiver TS FREQUENCY MULTIPLIER 1 ACTIVE 20 GND2 ACTIVE BLI 2 to decoder DO 3 9 RF pre-amplifier MIXER I 10 11 GND1 12 13 15 16 C11 22 pF RE 4 TPI 5 IF testpoints TPQ 6 7 8 UAA2080H L4 40 nH L5 40 nH Philips Semiconductors Product specification Advanced pager receiver Table 2 Tolerances of components shown in Figs 3, 4 and 5 (notes 1 and 2) COMPONENT Inductances L1, L10 L2, L3, L6, L7 L4, L5 L8 L9 Resistors R1 to R5 Capacitors C1, C2, C7, C8, C9 C3, C6, C12, C23 C4, C5, C14, C18 to C22 C10, C11 C13 C16 C17 Notes ±5 − ±10 ±5 ±20 − ±5 TC = (0 ±30) × 10−6/K; tan δ ≤ 30 × 10−4 at 1 MHz ±2 TC = +50 × 10−6/K ±5 ±20 ±10 ±10 ±10 Qmin = 145 at 470 MHz TOLERANCE (%) REMARK UAA2080 Qmin = 50 at 470 MHz; TC = (+25 to +125) × 10−6/K Qmin = 40 at 470 MHz; TC = (+25 to +125) × 10−6/K Qmin = 30 at 156 MHz; TC = (+25 to +125) × 10−6/K Qmin = 40 at 78 MHz; TC = (+25 to +125) × 10−6/K TC = (−750 ±300) × 10−6/K; tan δ ≤ 50 × 10−4 at 1 MHz TC = (0 ±30) × 10−6/K; tan δ ≤ 10 × 10−4 at 1 MHz TC = (0 ±30) × 10−6/K; tan δ ≤ 21 × 10−4 at 1 MHz TC = (−1700 ±500) × 10−6/K; tan δ ≤ 50 × 10−4 at 1 MHz TC = (0 ±30) × 10−6/K; tan δ ≤ 26 × 10−4 at 1 MHz 1. Recommended crystal: fXTAL = 78.325 MHz (crystal with 8 pF load), 3rd overtone, pullability >2.75 × 10−6/pF (change in frequency between series resonance and resonance with 8 pF capacitor at 25 °C), dynamic resistance R1 < 30 Ω, ∆f = ±5 × 10−6 for Tamb = −10 to +55 °C with 25 °C reference, calibration plus aging tolerance: −5 × 10−6 to +15 × 10−6. 2. This crystal recommendation is based on economic aspects and practical experience. Normally the spreads for R1, pullability and calibration do not show their worst case limits simultaneously in one crystal. In such a rare event, the tuning range will be reduced to an insufficient level. 1996 Jan 15 10 Product specification UAA2080 Fig.6 Test circuit; fi(RF) = 930.50 MHz. handbook, full pagewidth 1996 Jan 15 L8 33 nH C13 4.7 µF R3 330 Ω C19 150 pF L7 3 nH C12 1.7 to 3 pF 25 L6 3 nH TDC GND3 32 31 30 28 27 26 R4 390 Ω C15 Vi(OSC) 3.3 pF C14 150 pF VP CRYSTAL OSCILLATOR 24 22 V P low noise amplifier Q 21 R2 47 kΩ BATTERY LOW INDICATOR LIMITER Q GYRATOR FILTER FILTER DEMODULATOR GYRATOR LIMITER I low noise amplifier I FILTER FILTER MIXER Q 19 18 BAND GAP REFERENCE VP 14 C5 L2 L3 3.5 nH 3.5 nH 150 pF L10 5 nH C7 1.5 pF C6 1.7 to 3 pF C8 1.5 pF L11 5 nH C9 1.2 pF MLC705 Philips Semiconductors Advanced pager receiver BLOCK AND TEST DIAGRAM (930 MHz) TS FREQUENCY MULTIPLIER 1 ACTIVE 20 GND2 ACTIVE BLI 2 to decoder DO 3 11 RF pre-amplifier MIXER I 10 GND1 120 Ω R1 11 12 13 Vref 15 16 C4 150 pF VP RE 4 TPI 5 IF testpoints TPQ C1 1.2 pF 6 V i(RF) 7 L1 5 nH C3 1.7 to 3 pF 8 UAA2080H L4 12.5 nH L5 12.5 nH C2 1.0 pF Pins 9, 17, 23 and 29 are not connected. Philips Semiconductors Product specification Advanced pager receiver Table 3 Tolerances of components shown in Fig.6 (note 1) COMPONENT Inductances L1 L2, L3, L6, L7 L4, L5 L8 L10, L11 Resistors R1 to R4 Capacitors C1, C2, C7, C8, C9, C15 C3, C6, C12 C4, C5, C14, C19 C13 Note 1. The external oscillator signal Vi(OSC) has a frequency of fOSC = 310.1667 MHz. ±5 − ±10 ±20 TC = (0 ±30) × 10−6/K; tan δ ≤ 30 × 10−4 at 1 MHz ±2 TC = (0 ±200) × 10−6/K; ±10 − ±5 ±10 ±10 Qtyp = 150 at 930 MHz microstrip inductor Qtyp = 100 at 930 MHz Qtyp = 65 at 310 MHz Qtyp = 150 at 930 MHz TOLERANCE (%) REMARK UAA2080 TC = (0 ±200) × 10−6/K; tan δ ≤ 30 × 10−4 at 1 MHz TC = (0 ±30) × 10−6/K; tan δ ≤ 10 × 10−4 at 1 MHz 1996 Jan 15 12 Philips Semiconductors Product specification Advanced pager receiver PINNING (LQFP32) SYMBOL TS BLI DO RE TPI TPQ VI1RF VI2RF n.c. RRFA GND1 VO2RF VO1RF VP VI2MI VI1MI n.c. VI1MQ VI2MQ GND2 COM RGYR n.c. VO1MUL VO2MUL RMUL TDC OSC n.c. GND3 OSB OSE PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 DESCRIPTION UAA2080 28 OSC 32 OSE 31 OSB data output receiver enable input IF test point; I channel IF test point; Q channel pre-amplifier RF input 1 pre-amplifier RF input 2 not connected external emitter resistor for pre-amplifier ground 1 (0 V) pre-amplifier RF output 2 pre-amplifier RF output 1 supply voltage I channel mixer input 2 I channel mixer input 1 not connected Q channel mixer input 1 Q channel mixer input 2 ground 2 (0 V) gyrator filter resistor; common line gyrator filter resistor not connected frequency multiplier output 1 frequency multiplier output 2 external emitter resistor for frequency multiplier DC test point; no external connection for normal operation oscillator collector not connected ground 3 (0 V) oscillator base; crystal input oscillator emitter TS BLI DO RE TPI TPQ VI1RF VI2RF 1 2 3 4 5 6 7 8 29 n.c. handbook, halfpage 27 TDC battery LOW indicator output 25 VO2MUL test switch; connection to ground for normal operation 26 RMUL 30 GND3 24 VO1MUL 23 n.c. 22 RGYR UAA2080H 21 COM 20 GND2 19 VI2MQ 18 VI1MQ 17 n.c. 10 GND1 11 12 13 14 VI2MI 15 VI1MI 16 9 MLC706 n.c. RRFA VO2RF Fig.7 Pin configuration; LQFP32. 1996 Jan 15 13 VO1RF VP Philips Semiconductors Product specification Advanced pager receiver PINNING (SO28) SYMBOL PIN TPI TPQ VI1RF VI2RF RRFA GND1 VO2RF VO1RF VP VI2MI VI1MI VI1MQ VI2MQ GND2 COM RGYR VO1MUL VO2MUL RMUL TDC OSC GND3 OSB OSE TS BLI DO RE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 DESCRIPTION IF test point; I channel IF test point; Q channel pre-amplifier RF input 1 pre-amplifier RF input 2 external emitter resistor for pre-amplifier ground 1 (0 V) pre-amplifier RF output 2 pre-amplifier RF output 1 supply voltage I channel mixer input 2 I channel mixer input 1 Q channel mixer input 1 Q channel mixer input 2 ground 2 (0 V) gyrator filter resistor; common line gyrator filter resistor frequency multiplier output 1 frequency multiplier output 2 external emitter resistor for frequency multiplier DC test point; no external connection for normal operation oscillator collector ground 3 (0 V) oscillator base; crystal input oscillator emitter test switch; connection to ground for normal operation battery LOW indicator output data output receiver enable input VO2RF VO1RF VP 7 UAA2080T 8 9 TPI TPQ VI1RF VI2RF RRFA GND1 1 2 3 4 5 6 UAA2080 28 RE 27 DO 26 BLI 25 TS 24 OSE 23 OSB 22 GND3 21 OSC 20 TDC 19 18 17 16 15 MBB972 VI2MI 10 VI1MI 11 VI1MQ 12 VI2MQ 13 GND2 14 RMUL VO2MUL VO1MUL RGYR COM Fig.8 Pin configuration; SO28. 1996 Jan 15 14 Philips Semiconductors Product specification Advanced pager receiver CHIP DIMENSIONS AND BONDING PAD LOCATIONS See Table 4 for bonding pad description and locations for x/y co-ordinates. UAA2080 handbook, full pagewidth y 25 26 24 23 22 21 20 19 18 17 27 28 3.83 mm 1 2 16 15 UAA2080U 14 13 3 0 12 0 x 4 5 6 7 8 9 10 11 4.74 mm MLC707 Where: Pad number 1 (diameter 124 µm) Pad 124 µm x 124 µm Pad not used Pad 100 µm x 100 µm Pad 100 µm x 100 µm with reference point Chip area: 18.15 mm2. Chip thickness: 380 ±20 µm. Drawing not to scale. Fig.9 Bonding pad locations. 1996 Jan 15 15 Philips Semiconductors Product specification Advanced pager receiver Table 4 Bonding pad centre locations (dimensions in µm) PAD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 IF test point; I channel IF test point; Q channel pre-amplifier RF input 1 pre-amplifier RF input 2; note 1 external emitter resistor for pre-amplifier ground 1 (0 V) pre-amplifier RF output 2 pre-amplifier RF output 1 supply voltage I channel mixer input 2 I channel mixer input 1 Q channel mixer input 1 Q channel mixer input 2 ground 2 (0 V) gyrator filter resistor; common line gyrator filter resistor frequency multiplier output 1 frequency multiplier output 2 external emitter resistor for frequency multiplier DC test point; no external connection for normal operation oscillator collector ground 3 (0 V) oscillator base; crystal input oscillator emitter test switch; connection to ground for normal operation battery LOW indicator output data output receiver enable input lower left corner of chip (typical values) Note 1. All x/y co-ordinates are referenced to the centre of pad 4 (VI2RF); see Fig.9. DESCRIPTION −32 −32 −32 0 472 UAA2080 SYMBOL TPI TPQ VI1RF VI2RF RRFA GND1 VO2RF VO1RF VP VI2MI VI1MI VI1MQ VI2MQ GND2 COM RGYR VO1MUL VO2MUL RMUL TDC OSC GND3 OSB OSE TS BLI DO RE x y 1296 1000 360 0 0 0 0 0 0 0 0 360 960 1360 2024 2496 3136 3456 3458 3456 3456 3456 3456 3456 3456 3136 2512 2152 −186 1160 1 688 2 232 2 760 3 608 4 216 4 216 4 216 4 216 4 216 4216 4216 4176 3668 2952 2312 1832 1328 432 −32 −32 −32 −32 −278 1996 Jan 15 16 Philips Semiconductors Product specification Advanced pager receiver INTERNAL CIRCUITS UAA2080 handbook, full pagewidth 1 2 5 kΩ 32 31 30 29 n.c. VP 28 27 26 25 24 3 4 5 kΩ 150 k Ω 8.15 k Ω VP n.c. 23 22 21 1 kΩ 5 6 VP VP 19 7 8 n.c. 9 150 Ω 10 11 12 13 VP n.c. 14 15 16 MGA788 1 kΩ UAA2080H 20 18 17 Fig.10 Internal circuits drawn for LQFP32. 1996 Jan 15 17 Product specification UAA2080 Fig.11 Internal circuits drawn for SO28 and naked die. handbook, full pagewidth 1996 Jan 15 25 24 23 22 21 20 19 18 17 16 15 Philips Semiconductors 28 27 26 150 kΩ VP Advanced pager receiver 5 kΩ 5 kΩ VP 8.15 kΩ VP VP UAA2080T UAA2080U 18 150 Ω VP 6 7 8 9 10 11 3 4 5 1 kΩ 1 kΩ 1 2 12 13 14 MBB974 - 1 Philips Semiconductors Product specification Advanced pager receiver FUNCTIONAL DESCRIPTION The complete circuit consists of the following functional blocks as shown in Figs 1 to 6. Radio frequency amplifier The RF amplifier is an emitter-coupled pair driving a balanced cascode stage, which drives an external balanced tuned circuit. Its bias current is set by an external 300 Ω resistor R1 to typically 770 µA. With this bias current the optimum source resistance is 1.3 kΩ at VHF and 1.0 kΩ at UHF. At 930 MHz a higher bias current is required to achieve optimum gain. A value of 120 Ω is used for R1, which corresponds with a bias current of approximately 1.3 mA and an optimum source resistance of approximately 600 Ω.The capacitors C1 and C2 transform a 50 Ω source resistance to this optimum value. The output drives a tuned circuit with capacitive divider (C7, C8 and C9) to provide maximum power transfer to the phase-splitting network and the mixers. Mixers The double balanced mixers consist of common base input stages and upper switching stages driven from the frequency multiplier. The 300 Ω input impedance of each mixer acts together with external components (C10, C11; L4, L5 respectively) as phase shifter/power splitter to provide a differential phase shift of 90 degrees between the I channel and the Q channel. At 930 MHz all external phase shifter components are inductive (L10, L11; L4, L5). Oscillator The oscillator is based on a transistor in common collector configuration. It is followed by a cascode stage driving a tuned circuit which provides the signal for the frequency multiplier. The oscillator bias current (typically 250 µA) is determined by the 1.8 kΩ external resistor R5. The oscillator frequency is controlled by an external 3rd overtone crystal in parallel resonance mode. External capacitors between base and emitter (C17) and from emitter to ground (C16) make the oscillator transistor appear as having a negative resistance for small signals; this causes the oscillator to start. Inductance L9 connected in parallel with capacitor C16 to the emitter of the oscillator transistor prevents oscillation at the fundamental frequency of the crystal. UAA2080 The resonant circuit at output pin OSC selects the second harmonic of the oscillator frequency. In other applications a different multiplication factor may be chosen. At 930 MHz an external oscillator circuit is required to provide sufficient local oscillator signal for the frequency multiplier. Frequency multiplier The frequency multiplier is an emitter-coupled pair driving an external balanced tuned circuit. Its bias current is set by external resistor R4 to typically 190 µA (173 MHz), 350 µA (470 MHz) and 1 mA (930 MHz). The oscillator signal is internally AC coupled to one input of the emitter-coupled pair while the other input is internally grounded via a capacitor. The frequency multiplier output signal between pins VO1MUL and VO2MUL drives the upper switching stages of the mixers. The bias voltage on pins VO1MUL and VO2MUL is set by external resistor R3 to allow sufficient voltage swing at the mixer outputs. The value of R3 depends on the operating frequency: 1.5 kΩ (173 MHz), 820 Ω (470 MHz) and 330 Ω (930 MHz). Low noise amplifiers, active filters and gyrator filters The low noise amplifiers ensure that the noise of the following stages does not affect the overall noise figure. The following active filters before the gyrator filters reduce the levels of large signals from adjacent channels. Internal AC couplings block DC offsets from the gyrator filter inputs. The gyrator filters implement the transfer function of a 7th order elliptic filter. Their cut-off frequencies are determined by the 47 kΩ external resistor R2 between pins RGYR and COM. The gyrator filter output signals are available on IF test pins TPI and TPQ. Limiters The gyrator filter output signals are amplified in the limiter amplifiers to obtain IF signals with removed amplitude information. Demodulator The limiter amplifier output signals are fed to the demodulator. The demodulator output DO is going LOW or HIGH depending upon which of the input signals has a phase lead. 1996 Jan 15 19 Philips Semiconductors Product specification Advanced pager receiver Battery LOW indicator The battery LOW indicator senses the supply voltage and sets its output HIGH when the supply voltage is less than Vth (typically 2.05 V). Low battery warning is available at BLI. Band gap reference UAA2080 The whole chip can be powered-up and powered-down by enabling and disabling the band gap reference via the receiver enable pin RE. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Ground pins GND1, GND2 and GND3 connected together. SYMBOL VP Ves supply voltage electrostatic handling (note 1) pins VI1RF and VI2RF pin RRFA pins VO1RF and VO2RF pins VP and OSB pins OSC and OSE other pins Tstg Tamb Note 1. Equivalent to discharging a 100 pF capacitor via a 1.5 kΩ resistor. storage temperature operating ambient temperature −1500 −500 −2000 −500 −2000 −2000 −55 −10 +2000 +2000 +250 +500 +500 +2000 +125 +70 V V V V V V °C °C PARAMETER MIN. −0.3 MAX. +8.0 V UNIT 1996 Jan 15 20 Philips Semiconductors Product specification Advanced pager receiver UAA2080 DC CHARACTERISTICS VP = 2.05 V; Tamb = −10 to +70 °C (typical values at Tamb = 25 °C); measurements taken in test circuit Figs 1, 2, 3 or 4 with crystal at pin OSB disconnected; unless otherwise specified. SYMBOL Supply VP IP supply voltage supply current VRE = HIGH; fi(RF) = 173 and 470 MHz VRE = HIGH; fi(RF) = 930 MHz IP(off) VIH VIL IIH VIL VOH VOL Vth stand-by current VRE = LOW Receiver enable input (pin RE) HIGH level input voltage LOW level input voltage HIGH level input current LOW level input current VIH = VP = 3.5 V VIL = 0 V VP < Vth; IBLI = −10 µA VP > Vth; IBLI = +10 µA 1.4 0 − 0 VP − 0.5 − 1.95 − − − − − − 2.05 VP 0.3 20 −1.0 − 0.5 2.15 V V µA µA 1.9 2.3 2.9 − 2.05 2.7 3.4 − 3.5 3.2 3.9 3 V mA mA µA PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Battery LOW indicator output (pin BLI) HIGH level output voltage LOW level output voltage voltage threshold for battery LOW indicator IDO = −10 µA IDO = +10 µA V V V Demodulator output (pin DO) VOH VOL HIGH level output voltage LOW level output voltage VP − 0.5 − − − − 0.5 V V 1996 Jan 15 21 Philips Semiconductors Product specification Advanced pager receiver UAA2080 AC CHARACTERISTICS (173 MHz) VP = 2.05 V; Tamb = 25 °C; test circuit Figs 1 or 2; fi(RF) = 172.941 MHz with ±4.0 kHz deviation; 1200 baud pseudo random bit sequence modulation (tr = 250 ±25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz channel spacing; unless otherwise specified. SYMBOL PARAMETER CONDITIONS BER ≤ 3⁄100; note 1 Tamb = −10 to +70 °C; note 2 VP = 1.9 V Tamb = 25 °C Tamb = −10 to +70 °C αci αc αsp αim αbl foffset ∆fdev ton Notes 1. The bit error rate BER is measured using the test facility shown in Fig.13. Note that the BER test facility contains a digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders. 2. Capacitor C16 requires re-adjustment to compensate temperature drift. 3. ∆f is the frequency offset between the required signal and the interfering signal. 4. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the oscillator circuitry). IF filter channel imbalance co-channel rejection spurious immunity intermodulation immunity blocking immunity ∆f > ±1 MHz; note 3 frequency offset range deviation f = ±4.0 kHz (3 dB degradation in sensitivity) deviation f = ±4.5 kHz deviation range (3 dB degradation in sensitivity) receiver turn-on time data valid after setting RE input HIGH; note 4 − − − MIN. TYP. −126.5 − − MAX. −123.5 −120.5 −117.5 − − 2 7 − − − − − 7.0 5 UNIT Radio frequency input Pi(ref) input sensitivity (Pi(ref) is the maximum available power at the RF input of the test board) dBm dBm dBm Mixers to demodulator αacs adjacent channel selectivity 69 67 − − 50 55 78 ±2.0 ±2.5 2.5 − 72 − − 4 60 60 85 − − − − dB dB dB dB dB dB dB kHz kHz kHz ms 1996 Jan 15 22 Philips Semiconductors Product specification Advanced pager receiver UAA2080 AC CHARACTERISTICS (470 MHz) VP = 2.05 V; Tamb = 25 °C; test circuit Figs 3 or 4; fi(RF) = 469.950 MHz with ±4.0 kHz deviation; 1200 baud pseudo random bit sequence modulation (tr = 250 ± 25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz channel spacing; unless otherwise specified. SYMBOL PARAMETER CONDITIONS BER ≤ 3⁄100; note 1 Tamb = −10 to +70 °C; note 2 VP = 1.9 V BER ≤ 3⁄100; note 3 Tamb = 25 °C Tamb = −10 to +70 °C αci αc αsp αim αbl foffset ∆fdev ton Notes 1. The bit error rate BER is measured using the test facility shown in Fig.13. Note that the BER test facility contains a digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders. 2. Capacitor C16 requires re-adjustment to compensate temperature drift. 3. Test circuit Fig.5. Pi(mix) is the maximum available power at the input of the test board. The bit error rate BER is measured using the test facility shown in Fig.13. 4. ∆f is the frequency offset between the required signal and the interfering signal. 5. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the oscillator circuitry). IF filter channel imbalance co-channel rejection spurious immunity intermodulation immunity blocking immunity ∆f > ±1 MHz; note 4 frequency offset range deviation f = ±4.0 kHz (3 dB degradation in sensitivity) deviation f = ±4.5 kHz deviation range (3 dB degradation in sensitivity) receiver turn-on time data valid after setting RE input HIGH; note 5 − − − − MIN. TYP. −124.5 − − −115.0 MAX. −121.5 −118.5 −115.5 −110.0 − − 2 7 − − − − − 7.0 5 UNIT Radio frequency input Pi(ref) input sensitivity (Pi(ref) is the maximum available power at the RF input of the test board) dBm dBm dBm Mixer input Pi(mix) αacs input sensitivity dBm Mixers to demodulator adjacent channel selectivity 67 65 − − 50 55 75 ±2.0 ±2.5 2.5 − 70 − − 4 60 60 82 − − − − dB dB dB dB dB dB dB kHz kHz kHz ms 1996 Jan 15 23 Philips Semiconductors Product specification Advanced pager receiver UAA2080 AC CHARACTERISTICS (930 MHz) VP = 2.05 V; Tamb = 25 °C; test circuit Fig.6 (note 1); fi(RF) = 930.500 MHz with ±4.0 kHz deviation; 1200 baud pseudo random bit sequence modulation (tr = 250 ± 25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz channel spacing; unless otherwise specified. SYMBOL PARAMETER CONDITIONS BER ≤ 3⁄100; note 2 VP = 1.9 V − − MIN. TYP. −120.0 − MAX. −114.0 −108.0 UNIT Radio frequency input Pi(ref) input sensitivity (Pi(ref) is the maximum available power at the RF input of the test board) dBm dBm Mixers to demodulator αacs αc αsp αim αbl foffset ∆fdev ton Notes 1. The external oscillator signal Vi(OSC) has a frequency of fOSC = 310.1667 MHz and a level of −15 dBm. 2. The bit error rate BER is measured using the test facility shown in Fig.13. Note that the BER test facility contains a digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders. 3. ∆f is the frequency offset between the required signal and the interfering signal. 4. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the oscillator circuitry). adjacent channel selectivity co-channel rejection spurious immunity intermodulation immunity blocking immunity ∆f > ±1 MHz; note 3 frequency offset range deviation f = ±4.0 kHz (3 dB degradation in sensitivity) deviation f = ±4.5 kHz deviation range (3 dB degradation in sensitivity) receiver turn-on time data valid after setting RE input HIGH; note 4 Tamb = 25 °C 60 − 40 53 65 ±2.0 ±2.5 2.5 − 69 5 60 60 74 − − − − − 10 − − − − − 7.0 5 dB dB dB dB dB kHz kHz kHz ms 1996 Jan 15 24 Philips Semiconductors Product specification Advanced pager receiver TEST INFORMATION Tuning procedure for AC tests 1. Turn on the signal generator: fgen = fi(RF) + 4 kHz, no modulation, Vi(RF) = 1 mV (RMS). UAA2080 2. Measure the IF with a counter connected to test pin TPI. Tune C16 to set the crystal oscillator to achieve fIF = 4 kHz Change the generator frequency to fgen = fi(RF) − 4 kHz and check that fIF is also 4 kHz. For a received input frequency fi(RF) = 172.941 MHz the crystal frequency is fXTAL = 57.647 MHz, while for fi(RF) = 469.950 MHz the crystal frequency is fXTAL = 78.325 MHz. For a received input frequency fi(RF) = 930.500 MHz an external oscillator signal must be used with fi(OSC) = 310.1667 MHz and a level of −15 dBm (for definition of crystal frequency, see Table 1). 3. Set the signal generator to nominal frequency (fi(RF)) and turn on the modulation deviation ±4.0 kHz, 600 Hz square wave modulation, Vi(RF) = 1 mV (RMS). Note that the RF signal should be reduced in the following tests, as the receiver is tuned, to ensure Vo(IF) = 10 to 50 mV (p-p) on test pins TPI or TPQ. 4. Tune C15 (oscillator output circuit) and C12 (frequency multiplier output) to obtain a peak audio voltage on pin TPI. 5. Tune C3 and C6 (RF input and mixer input) to obtain a peak audio voltage on pin TPI. When testing the mixer input sensitivity tune C23 instead of C3 and C6 (test circuit Fig.5). 6. Check that the output signal on pin TPQ is within 3 dB in amplitude and at 90° (±20°) relative phase of the signal on pin TPI. 7. Check that data signal appears on output pin DO and proceed with the AC test. AC test conditions Table 5 Definitions for AC test conditions (see Table 6) DESCRIPTION SIGNAL Modulated test signal 1 Frequency Deviation Rise time 172.941, 469.950 or 930.500 MHz ±4.0 kHz Modulation 1200 baud pseudo random bit sequence 250 ±25 µs (between 10% and 90% of final value) ±2.4 kHz Modulated test signal 2 Deviation Modulation 400 Hz sinewave Other definitions f1 f2 f3 ∆fcs P1 P2 P3 Pi(ref) frequency of signal generator 1 frequency of signal generator 2 frequency of signal generator 3 channel spacing (20 kHz) maximum available power from signal generator 1 at the test board input maximum available power from signal generator 2 at the test board input maximum available power from signal generator 3 at the test board input maximum available power at the test board input to give a Bit Error Rate (BER) ≤ 3⁄100 for the modulated test signal 1, in the absence of interfering signals and under the conditions as specified in Chapters “AC characteristics (173 MHz)”, “AC characteristics (470 MHz)” and “AC characteristics (930 MHz)” 1996 Jan 15 25 Philips Semiconductors Product specification Advanced pager receiver Table 6 αa AC test conditions (notes 1 and 2) PARAMETER adjacent channel selectivity; Fig.12(b) f2 = f1 ± ∆fCS generator 1: modulated test signal 1 generator 2: modulated test signal 2 αc co-channel rejection; Fig.12(b) f2 = f1 ± up to 3 kHz generator 1: modulated test signal 1 generator 2: modulated test signal 2 αsp spurious immunity; Fig.12(b) f2 = 100 kHz to 2 GHz generator 1: modulated test signal 1 generator 2: modulated test signal 2 αim intermodulation immunity; Fig.12(c) f2 = f1 ± ∆fcs; f3 = f1 ± 2∆fcs generator 1: modulated test signal 1 generator 2: unmodulated generator 3: modulated test signal 2 αbl blocking immunity; Fig.12(b) f2 = f1 ± 1 MHz generator 1: modulated test signal 1 generator 2: modulated test signal 2 foffset ∆fdev ton frequency offset range; Fig.12(a) deviation range; Fig.12(a) receiver turn-on time; Fig.12(a) deviation = ±4.0 kHz, f1 = fi(RF) ± 2 kHz (foffset(min)) generator 1: modulated test signal 1 deviation = ±2.5 to ±7 kHz; (∆fdev(min) to ∆fdev(max)) generator 1: modulated test signal 1 note 3 generator 1: modulated test signal 1 CONDITIONS UAA2080 SYMBOL TEST SIGNALS P1 = Pi(ref) + 3 dB P2 = P1 + αa(min) P1 = Pi(ref) + 3 dB P2 = P1 − αc(max) P1 = Pi(ref) + 3 dB P2 = P1 + αsp( min) P1 = Pi(ref) + 3 dB P2 = P1 + αim(min) P3 = P2 P1 = Pi(ref) + 3 dB P2 = P1 + αbl(min) P1 = Pi(ref) + 3 dB P1 = Pi(ref) + 3 dB P1 = Pi(ref) + 10 dB Notes 1. The tests are executed without load on pins TPI and TPQ. 2. All minimum and maximum values correspond to a bit error rate (BER) ≤ 3⁄100 in the wanted signal (P1). 3. The BER measurement is started 5 ms (ton(max)) after VRE goes HIGH; BER is then measured for 100 bits (BER ≤ 3⁄100). 1996 Jan 15 26 Philips Semiconductors Product specification Advanced pager receiver UAA2080 handbook, full pagewidth (a) GENERATOR 1 R s = 50 Ω DEVICE UNDER TEST BER TEST(1) FACILITY (b) GENERATOR 1 R s = 50 Ω 50 Ω 2-SIGNAL POWER COMBINER DEVICE UNDER TEST BER TEST(1) FACILITY GENERATOR 2 R s = 50 Ω GENERATOR 1 R s = 50 Ω (c) GENERATOR 2 R s = 50 Ω 50 Ω 3-SIGNAL POWER COMBINER DEVICE UNDER TEST BER TEST(1) FACILITY MLC708 GENERATOR 3 R s = 50 Ω (a) One generator. (b) Two generators. (c) Three generators. (1) See Fig.13. Fig.12 Test configurations. handbook, full pagewidth recovered clock GENERATOR R s = 50 Ω DEVICE UNDER TEST DIGITAL FILTER CLOCK RECOVERY retimed Rx data to error counter PRESET DELAY DATA COMPARATOR 250 µs RISE TIME PSEUDO RANDOM SEQUENCE GENERATOR MASTER CLOCK MLC233 Fig.13 BER test facility. 1996 Jan 15 27 Philips Semiconductors Product specification Advanced pager receiver PRINTED-CIRCUIT BOARDS UAA2080 handbook, full pagewidth MBD562 Fig.14 PCB top view for LQFP32; test circuit Figs 1 and 3. 1996 Jan 15 28 Philips Semiconductors Product specification Advanced pager receiver UAA2080 handbook, full pagewidth MBD561 Fig.15 PCB bottom view for LQFP32; test circuit Figs 1 and 3. 1996 Jan 15 29 Philips Semiconductors Product specification Advanced pager receiver UAA2080 handbook, full pagewidth C19 R3 L7 L6 L5 C14 C15 C12 UAA2080H L8 C13 C16 GND XTAL C17 L9 R5 C18 TS R1 C6 C4 L2 R2 L4 C11 C10 C9 C7 C8 L3 VP BLI VIRF DO DO TPI TPQ RE MLC709 VEE = GND; VC = VP. Fig.16 PCB top view with components for LQFP32; test circuit Fig.3. 1996 Jan 15 30 Philips Semiconductors Product specification Advanced pager receiver UAA2080 handbook, full pagewidth C5 R4 C3 L1 C2 C1 MLC235 Fig.17 PCB bottom view with components for LQFP32; test circuit Fig.3. 1996 Jan 15 31 Philips Semiconductors Product specification Advanced pager receiver UAA2080 handbook, full pagewidth MBD565 Fig.18 PCB top view for SO28; test circuit Figs 2 and 4. 1996 Jan 15 32 Philips Semiconductors Product specification Advanced pager receiver UAA2080 handbook, full pagewidth MBD567 Fig.19 PCB bottom view for SO28; test circuit Figs 2 and 4. 1996 Jan 15 33 Philips Semiconductors Product specification Advanced pager receiver UAA2080 handbook, full pagewidth VP GND GND C13 OPS BI DATA OUT DO RE C14 C18 R5 XL1 C19 L7 C17 L8 C16 C15 R3 L6 VP C12 R2 UAA2080T C11 L4 RF IN L3 TPQ TPI C4 L2 C8 L5 C9 C10 C7 MBD566 VEE = GND; VCC = VP; BI = BLI; OPS = TS. Fig.20 PCB top view with components for SO28; test circuit Fig.4. 1996 Jan 15 34 Philips Semiconductors Product specification Advanced pager receiver UAA2080 handbook, full pagewidth R4 SHORT C5 R1 L1 C3 C1 C2 MBD568 Fig.21 PCB bottom view with components for SO28; test circuit Fig.4. 1996 Jan 15 35 Philips Semiconductors Product specification Advanced pager receiver UAA2080 handbook, full pagewidth C19 R3 C23 L7 L6 L5 R2 C14 C15 VP L8 C13 C16 GND XTAL L9 R5 C18 TS C17 V i(RF) C12 C11 UAA2080H L4 C10 C21 C22 L10 BLI DO DO TPI TPQ RE MLC710 Fig.22 PCB top view with components for LQFP32; test circuit Fig.5. 1996 Jan 15 36 Philips Semiconductors Product specification Advanced pager receiver UAA2080 handbook, full pagewidth C5 R4 MLC237 Fig.23 PCB bottom view with components for LQFP32; test circuit Fig.5. 1996 Jan 15 37 Philips Semiconductors Product specification Advanced pager receiver UAA2080 ok, full pagewidth GND C13 VP L5 L4 C9 L11 R2 R3 L6 C19 L7 L8 C14 Vi(OSC) C15 TS BLI DO RE TPI TPQ C1 C2 C3 L1 R1 L2 C6 C12 UAA2080H C7 C8 L3 C4 L10 MLC711 V i(RF) Fig.24 PCB top view with components for LQFP32; test circuit Fig.6. 1996 Jan 15 38 Philips Semiconductors Product specification Advanced pager receiver UAA2080 handbook, full pagewidth C5 R4 MLC239 Fig.25 PCB bottom view with components for LQFP32; test circuit Fig.6. 1996 Jan 15 39 Philips Semiconductors Product specification Advanced pager receiver PACKAGE OUTLINES LQFP32: plastic low profile quad flat package; 32 leads; body 7 x 7 x 1.4 mm UAA2080 SOT358-1 c y X 24 25 17 16 ZE A e E HE wM A A2 A 1 Q (A 3) θ bp Lp L pin 1 index 32 1 e bp D HD wM B vM B 8 ZD vM A 9 detail X 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.60 A1 0.20 0.05 A2 1.45 1.35 A3 0.25 bp 0.4 0.3 c 0.18 0.12 D (1) 7.1 6.9 E (1) 7.1 6.9 e 0.8 HD 9.15 8.85 HE 9.15 8.85 L 1.0 Lp 0.75 0.45 Q 0.69 0.59 v 0.2 w 0.25 y 0.1 Z D (1) Z E (1) 0.9 0.5 0.9 0.5 θ 7 0o o Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT358 -1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 93-06-29 95-12-19 1996 Jan 15 40 Philips Semiconductors Product specification Advanced pager receiver UAA2080 SO28: plastic small outline package; 28 leads; body width 7.5 mm SOT136-1 D E A X c y HE vMA Z 28 15 Q A2 A1 pin 1 index Lp L 1 e bp 14 wM detail X (A 3) θ A 0 5 scale 10 mm DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT136-1 REFERENCES IEC 075E06 JEDEC MS-013AE EIAJ EUROPEAN PROJECTION A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 18.1 17.7 0.71 0.69 E (1) 7.6 7.4 0.30 0.29 e 1.27 HE 10.65 10.00 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) θ 0.9 0.4 0.012 0.096 0.004 0.089 0.019 0.013 0.014 0.009 0.419 0.043 0.050 0.055 0.394 0.016 0.035 0.004 0.016 8o 0o ISSUE DATE 95-01-24 97-05-22 1996 Jan 15 41 Philips Semiconductors Product specification Advanced pager receiver SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all LQFP and SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering LQFP Wave soldering is not recommended for LQFP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. If wave soldering cannot be avoided, the following conditions must be observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. • The footprint must be at an angle of 45° to the board direction and must incorporate solder thieves downstream and at the side corners. Even with these conditions, do not consider wave soldering LQFP packages LQFP48 (SOT313-2), LQFP64 (SOT314-2) or LQFP80 (SOT315-1). 1996 Jan 15 42 SO UAA2080 Wave soldering techniques can be used for all SO packages if the following conditions are observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. • The longitudinal axis of the package footprint must be parallel to the solder flow. • The package footprint must incorporate solder thieves at the downstream end. METHOD (LQFP AND SO) During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Philips Semiconductors Product specification Advanced pager receiver DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values UAA2080 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jan 15 43 Philips Semiconductors – a worldwide company Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40-2783749, Fax. (31)40-2788399 Brazil: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SÃO PAULO-SP, Brazil, P.O. Box 7383 (01064-970), Tel. (011)821-2333, Fax. (011)829-1849 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (800) 234-7381, Fax. (708) 296-8556 Chile: Av. Santa Maria 0760, SANTIAGO, Tel. (02)773 816, Fax. (02)777 6730 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. (852)2319 7888, Fax. (852)2319 7700 Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17, 77621 BOGOTA, Tel. (571)249 7624/(571)217 4609, Fax. (571)217 4549 Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. (45)32 88 26 36, Fax. (45)31 57 19 49 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. (358)0-615 800, Fax. (358)0-61580 920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. (01)4099 6161, Fax. (01)4099 6427 Germany: P.O. Box 10 51 40, 20035 HAMBURG, Tel. (040)23 53 60, Fax. 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(0181)754-8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556 Uruguay: Coronel Mora 433, MONTEVIDEO, Tel. (02)70-4044, Fax. (02)92 0601 Internet: http://www.semiconductors.philips.com/ps/ For all other countries apply to: Philips Semiconductors, International Marketing and Sales, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-2724825 SCDS47 © Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 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