7EL2

7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright © 1999, Power Innovations Limited, UK JANUARY 1999 TELECOMMUNICATION SYSTEM PRIMARY PROTECTION q Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge V(BR) DEVICE MINIMUM V 7EL2 ±245 V(BO) MINIMUM V ±265 V(BO) MAXIMUM V ±400 CELL PACKAGE (SIDE VIEW) T(A) R(B) q Rated for International Surge Wave Shapes ITU-T K28 DEVICE (10/700) ITSP A 7EL2 ±400 GR-974-CORE (10/1000) ITSP A ±300 MD4XACA device symbol T q q Gas Discharge Tube (GDT) Replacement SD4XAA Planar Passivated Junctions in a Protected Cell Construction Low Off-State Current Extended Service Life R Terminals T and R correspond to the alternative line designators of A and B q Soldered Copper Electrodes High Current Capability Cell Construction Short Circuits Under Excessive Current Conditions description These devices are primary protector components for semiconductor arrester assemblies intended to meet the generic requirements of Bellcore GR-974-CORE (November 1994) or ITU-T Recommendation K28 (03/93). To conform to the specified environmental requirements, the 7EL2 must be installed in a housing which maintains a stable microclimate during these tests. The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. The 7EL2 is guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These monolithic protection devices are constructed using two nickel plated copper electrodes soldered to each side of the silicon chip. This packaging approach allows heat to be removed from both sides of the silicon, resulting in the doubling of the devices thermal capacity, enabling a power line cross current capability of 10 A rms for 1 second. One of the 7EL2’s copper electrodes is specially shaped to promote a progressive shorting action (at 50/60 Hz currents greater than 60 A). The assembly must hold the 7EL2 in compression, so that the cell electrodes can be forced together during overstress testing. Under excessive power line cross conditions the 7EL2 will fail short circuit, providing maximum protection to the equipment. PRODUCT INFORMATION 1 Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. Manufactured by TI using silicon designed and manufactured by Power Innovations, Bedford, UK. 7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 absolute maximum ratings, TA = 25°C (unless otherwise noted) RATING Non-repetitive peak on-state pulse current (see Notes 1 and 2) 5/310 µs (ITU-T K28, 10/700 µs voltage wave shape) 10/1000 µs (GR-974-CORE, 10/1000 µs voltage wave shape) Non-repetitive peak on-state current (see Note 1) full sine wave, 50/60 Hz, 1 s Junction temperature Storage temperature range -40°C to 65°C ITSM TJ Tstg 10 -40 to +150 -40 to +150 A rms °C °C -20°C to 65°C -20°C to 65°C ITSP 400 300 A SYMBOL VALUE UNIT NOTES: 1. The surge may be repeated after the device has returned to thermal equilibrium. 2. Most PTT’s quote an unloaded voltage waveform. In operation the 7EL2 essentially shorts the generator output. The resulting loaded current waveform is specified. electrical characteristics for the T and R terminals, TA = 25°C (unless otherwise noted) PARAMETER V(BR) V(BO) V(BO) Breakdown Voltage Breakover voltage Impulse breakover voltage Impulse reset TEST CONDITIONS I(BR) = ±20 mA, (see Note 3) dv/dt = ±0.2 V/s, RSOURCE > 200 Ω -40°C to 65°C +15°C to 25°C -40°C to 65°C -40°C to 65°C MIN ±245 ±265 ±400 ±400 TYP MAX UNIT V V V 100 V/µs ≤ dv/dt ≤ ±1000 V/µs, di/dt ≤ 10 A/µs Sources are 52.5 V O.C., 260 mA S.C. and 135 V O.C., 200 mA S.C. on-state current 25 A, 10/1000 µs impulse VD = ±50 V (see Note 4) VD = ±200 V f = 1 MHz, Vd = 1 Vrms, VD = 0, -40°C to 65°C -40°C to 65°C -40°C to 65°C -40°C to 65°C 20 ±0.5 ±10 200 ms ID Coff Off-state current Off-state capacitance µA pF NOTES: 3. Meets Bellcore GR-974-CORE Issue 1, November 1994 - Rated Voltage Test (4.7) 4. This device is sensitive to light. Suggest that this parameter be measured in a dark environment PRODUCT 2 INFORMATION 7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 PARAMETER MEASUREMENT INFORMATION +i ITSP Quadrant I Switching Characteristic ITSM V(BO) -v I(BR) V(BR) VD ID ID VD V(BR) I(BR) +v V(BO) ITSM Quadrant III Switching Characteristic ITSP -i PMXXAG Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL PRODUCT INFORMATION 3 7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 TYPICAL CHARACTERISTICS OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 NORMALISED BREAKDOWN VOLTAGE (V(BR)) vs JUNCTION TEMPERATURE I(BR) = ±20 mA TC4VAH TCVAG 1.15 10 |ID| - Off-State Current - µA VD = ±200 V 1 Normalised Voltage 1.10 1.05 0·1 VD = ±50 V 1.00 0·01 0·001 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C 150 0.95 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - °C Figure 2. NORMALISED BREAKOVER VOLTAGE (V(BO)) vs JUNCTION TEMPERATURE TC4VAJ Figure 3. NORMALISED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4VAK 1.5 1.05 Normalised Holding Current Normalised Voltage 1.0 0.9 0.8 0.7 0.6 0.5 1.00 0.95 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C 150 0.4 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C 150 Figure 4. Figure 5. PRODUCT 4 INFORMATION 7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 TYPICAL CHARACTERISTICS OFF-STATE CAPACITANCE vs TERMINAL VOLTAGE 200 TC4VAM 200 OFF-STATE CAPACITANCE vs JUNCTION TEMPERATURE TC4VAL VD = 0 Off-State Capacitance - pF Off-State Capacitance - pF 100 90 80 70 60 50 40 Vd = 1 Vrms, f = 1 MHz, TA = 25 °C 30 0·1 VD Positive 100 90 80 70 60 50 40 VD = +50 V VD Negative VD = - 50 V Vd = 1 Vrms, f = 1 MHz 100 30 -40 1 10 VD - DC Off-State Voltage - V -20 0 20 40 60 TJ - Junction Temperature - °C 80 Figure 6. CUMULATIVE POPULATION vs 10/1000 CURRENT CAPABILITY TC4VAN 99 98 95 Cumulative Population - % 90 80 70 60 50 40 30 20 10 5 Figure 7. 2 1 +65 °C +25 °C -5 °C -20 °C = TA 0.5 370 380 390 400 410 420 430 440 450 460 470 I - Peak Current Capability - A Figure 8. PRODUCT INFORMATION 5 7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 RATING AND THERMAL INFORMATION MAXIMUM NON-RECURRING 60 Hz CURRENT vs CURRENT DURATION TI4VAA ITRMS - Maximum Non-Recurrent 60 Hz Current - A 100 TA = 65 °C VGEN = 600 Vrms RGEN = 10 to 200 Ω 10 1 0·1 1 10 100 t - Current Duration - s 1000 Figure 9. PRODUCT 6 INFORMATION 7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 MECHANICAL DATA cell package BUTTON CELL 7EL2 0,508 (0.020) MAX Top Electrode 2,45 (0.096) 2,16 (0.085) Sleeve Bidirectional Silicon Chip 0,178 (0.007) MAX Bottom Electrode φ 2,67 (0.105) 2,16 (0.085) φ 6,10 (0.240) MAX ALL LINEAR DIMENSIONS IN MILLIMETERS AND PARENTHETICALLY IN INCHES MD4XAO PRODUCT INFORMATION 7 7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilised to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1999, Power Innovations Limited PRODUCT 8 INFORMATION