BU407

BU406, BU407 NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q q q 7 A Continuous Collector Current 15 A Peak Collector Current 60 W at 25°C Case Temperature B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = -2 V) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. BU406 BU407 BU406 BU407 BU406 BU407 SYMBOL VCBO VCEX VCEO VEB IC ICM IB Ptot Tj Tstg VALUE 400 330 400 330 200 150 6 7 15 4 60 -55 to +150 -55 to +150 UNIT V V V V A A A W °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA IB = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 IC = 0 IC = 4A (see Notes 2 and 3) (see Notes 2 and 3) (see Notes 2 and 3) f = 1 MHz f = 1 MHz (see Note 4) 6 60 12 20 1 1.2 V V MHz pF TC = 150°C TC = 150°C BU406 BU407 BU406 BU407 BU406 BU407 TEST CONDITIONS MIN 140 5 5 0.1 0.1 1 1 1 mA mA TYP MAX UNIT V VCE = 400 V V CE = 330 V ICES Collector-emitter cut-off current V CE = 250 V V CE = 200 V V CE = 250 V V CE = 200 V IEBO hFE VCE(sat) V BE(sat) ft Cob Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance VEB = VCE = V CE = IB = IB = VCE = VCB = 6V 10 V 10 V 0.5 A 0.5 A 5V 20 V IC = 0.5 A IC = IC = 5A 5A IC = 0.5 A IE = 0 NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. 4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.08 70 UNIT °C/W °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER ts t(off) † TEST CONDITIONS IC = 5 A IB(end) = 0.5A † MIN (see Figures 1 and 2) TYP 2.7 MAX 750 UNIT µs ns Storage time Turn off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION V BB+ 5.6 Ω 22 Ω 7.5 Ω BY205 V cc = 24V 47 Ω SET IB 100 Ω 100 Ω +4V INPUT 0 2N5337 2N6191 TIP31 TIP31 TIP31 1 kΩ 14.8 µ H TUT 50 Ω TIP32 TIP32 Current Probes 5 pF OUTPUT BY205 240 µ H 22 Ω V BB- 22 Ω Figure 1. Inductive-Load Switching Test Circuit 64 µ s 42 µ s I B(end) 50% 0 IB t IC 0 s 0.1 A t off toff is the time for the collector current IC to decrease to 0.1 A Vfly after the collector to emitter voltage VCE has risen 3 V into its flyback excursion. V CE 0 3V Figure 2. Inductive-Load Switching Waveforms PRODUCT INFORMATION 3 BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 70 TCD124AA TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 50 TCD124AB 60 hFE - Typical DC Current Gain 50 hFE - Typical DC Current Gain TC = 100°C tp < 300 µs d < 2% VCE = 5 V 40 TC = 25°C tp < 300 µs d < 2% 40 TC = 25°C 30 30 20 20 10 10 TC = -55°C 0 0·1 VCE = 1 V VCE = 5 V VCE = 10 V 1·0 IC - Collector Current - A 10 0 0·1 1·0 IC - Collector Current - A 10 Figure 3. Figure 4. COLLECTOR-EMITTER SATURATION VOLTAGE vs CASE TEMPERATURE VCE(sat) - Collector-Emitter Saturation Voltage - V 0·8 0·7 0·6 0·5 0·4 0·3 0·2 0·1 0 -60 -40 -20 IC = 4 A IB = 0.5 A TCD124AC tp < 300 µs d < 2% IC = 8 A IB = 2 A 0 20 40 60 80 100 120 140 160 TC - Case Temperature - °C Figure 5. PRODUCT INFORMATION 4 BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 SAD124AA IC - Collector Current - A 1·0 0·1 0.01 1·0 10 BU407 BU406 100 1000 VCE - Collector-Emitter Voltage - V Figure 6. PRODUCT INFORMATION 5 BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 V ERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE PRODUCT INFORMATION 6 BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7