BU426A

BU426, BU426A NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q q Rugged Triple-Diffused Planar Construction 900 Volt Blocking Capability B SOT-93 PACKAGE (TOP VIEW) 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current (see Note 1) Continuous device dissipation at (or below) 50°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. BU426 BU426A BU426 BU426A BU426 BU426A SYMBOL VCBO VCES VCEO IC ICM IB IBM Ptot Tj Tstg VALUE 800 900 800 900 375 400 6 10 +2, -0.1 ±3 70 -65 to +150 -65 to +150 UNIT V V V A A A A W °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BU426, BU426A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage IC = 100 mA VCE = 800 V ICES V CE = 900 V V CE = 800 V V CE = 900 V IEBO hFE VCE(sat) V BE(sat) VEB = VCE = IB = IB = IB = IB = 10 V 5V 0.5 A 1.25 A 0.5 A 1.25 A TEST CONDITIONS L = 25 mH VBE = 0 VBE = 0 VBE = 0 VBE = 0 IC = 0 IC = 0.6 A IC = 2.5 A IC = IC = 4A 4A IC = 2.5 A (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) 30 TC = 125°C TC = 125°C (see Note 2) BU426 BU426A BU426 BU426A BU426 BU426A MIN 375 400 1 1 2 2 10 60 1.5 3 1.4 1.6 V V mA mA TYP MAX UNIT V NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC Junction to case thermal resistance MIN TYP MAX 1.1 UNIT °C/W resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER ton ts tf tf † TEST CONDITIONS IC = 2.5 A V CC = 250 V IC = 2.5 A V CC = 250 V IB(on) = 0.5 A † MIN IB(off) = -1 A TYP 0.3 2 0.15 MAX 0.6 3.5 UNIT µs µs µs Turn on time Storage time Fall time Fall time (see Figures 1 and 2) IB(on) = 0.5 A TC = 95°C IB(off) = -1 A 0.2 0.75 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 BU426, BU426A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION +25 V BD135 120 Ω 680 µ F 100 Ω T V1 tp 47 Ω 100 µ F V cc = 250 V TUT 15 Ω V1 100 Ω BD136 82 Ω 680 µ F tp = 20 µ s Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit C IC A - B = td B - C = tr E - F = tf D - E = ts A - C = ton D - F = toff B 90% 90% E 10% 10% F 0% 90% IB D dIB ≥ 2 A/µs dt I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms PRODUCT INFORMATION 3 BU426, BU426A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 100 TCP741AF COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 7 TCP741AG VCE = 1.5 V VCE = 5 V hFE - Typical DC Current Gain TC = 25°C 6 IC = 4 A IC = 3 A IC = 2 A IC = 1 A 5 4 10 3 2 1 1·0 0·1 0 1·0 IC - Collector Current - A 10 0 0·5 1·0 IB - Base Current - A 1·5 2·0 Figure 3. Figure 4. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 7 TCP741AH BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1·2 VBE(sat) - Base-Emitter Saturation Voltage - V TC = 25°C 1·1 TCP741AI TC = 100°C 6 IC = 4 A IC = 3 A IC = 2 A IC = 1 A 5 1·0 4 0·9 3 0·8 IC = 4 A IC = 3 A IC = 2 A IC = 1 A 0 0·2 0·4 0·6 0·8 1·0 1·2 1·4 1·6 2 1 0·7 0 0 0·5 1·0 IB - Base Current - A 1·5 2·0 0·6 IB - Base Current - A Figure 5. Figure 6. PRODUCT INFORMATION 4 BU426, BU426A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAP741AA IC - Collector Current - A 10 1·0 tp = tp = 0.1 tp = tp = tp = 0.2 µs 0.5 µs 1 µs 2 µs 6 µs BU426 BU426A 10 100 1000 tp = 20 µs DC Operation 0·01 1·0 VCE - Collector-Emitter Voltage - V Figure 7. PRODUCT INFORMATION 5 BU426, BU426A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 4,1 4,0 15,2 14,7 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW PRODUCT INFORMATION 6 BU426, BU426A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7