BUV48

BUV48, BUV48A NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 15 A Continuous Collector Current 1000 Volt Blocking Capability B SOT-93 PACKAGE (TOP VIEW) 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-emitter voltage (V BE = 0 V) Collector-emitter voltage (RBE = 10 Ω) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current Non repetitive accidental peak surge current Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A SYMBOL VCES VCER VCEO IC ICM IB IBM ICSM Ptot Tj Tstg VALUE 850 1000 850 1000 400 450 15 30 4 20 55 125 -65 to +150 -65 to +150 UNIT V V V A A A A A W °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BUV48, BUV48A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) Collector-emitter sustaining voltage Collector-emitter cut-off current IC = 200 mA VCE = 850 V ICES V CE = 1000 V V CE = 850 V V CE = 1000 V VCE = 850 V ICER Collector-emitter cut-off current Emitter cut-off current Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance V CE = 1000 V V CE = 850 V V CE = 1000 V IEBO VEBO VEB = IE = IB = VCE(sat) IB = IB = IB = V BE(sat) ft Cob IB = IB = VCE = VCB = 5V 50 mA 2A 3A 1.6 A 2.4 A 2A 1.6 A 10 V 20 V TEST CONDITIONS L = 25 mH VBE = 0 VBE = 0 VBE = 0 VBE = 0 RBE = 10 Ω RBE = 10 Ω RBE = 10 Ω RBE = 10 Ω IC = 0 IC = 0 IC = IC = IC = IC = IC = IC = 10 A 15 A 8A 12 A 10 A 8A (see Notes 3 and 4) f = 1 MHz f = 1 MHz (see Notes 3 and 4) BUV48 BUV48 BUV48A BUV48A BUV48 BUV48A 10 150 7 TC = 125°C TC = 125°C TC = 125°C TC = 125°C (see Note 2) BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A MIN 400 450 0.2 0.2 2.0 2.0 0.5 0.5 4.0 4.0 1 30 1.5 5.0 1.5 5.0 1.6 1.6 V MHz pF V mA V mA mA TYP MAX UNIT V IC = 0.5 A IC = 0 NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC Junction to case thermal resistance MIN TYP MAX 1 UNIT °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton ts tf ton ts tf † TEST CONDITIONS I C = 10 A IB(on) = 2 A IC = 8 A IB(on) = 1.6 A VCC = 150 V IB(off) = -2 A VCC = 150 V IB(off) = -1.6 A † MIN BUV48 (see Figures 1 and 2) BUV48A (see Figures 1 and 2) TYP MAX 1.0 3.0 0.8 1.0 3.0 0.8 UNIT µs µs µs µs µs µs Turn on time Storage time Fall time Turn on time Storage time Fall time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. inductive-load-switching characteristics at 100°C case temperature PARAMETER tsv tfi tsv tfi Voltage storage time Current fall time Voltage storage time Current fall time I C = 10 A V BE(off) = -5 V IC = 8 A V BE(off) = -5 V TEST CONDITIONS IB(on) = 2 A (see Figures 3 and 4) IB(on) = 1.6 A (see Figures 3 and 4) † MIN BUV48 BUV48A TYP MAX 4.0 0.4 4.0 0.4 UNIT µs µs µs µs PRODUCT INFORMATION 2 BUV48, BUV48A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION +25 V BD135 120 Ω 680 µ F 100 Ω V cc V= 250 V CC T V1 tp 47 Ω 100 µ F TUT 15 Ω V1 100 Ω BD136 82 Ω 680 µ F tp = 20 µ s Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit C IC A - B = td B - C = tr E - F = tf D - E = ts A - C = ton D - F = toff B 90% 90% E 10% 10% F 0% 90% IB D dIB ≥ 2 A/µs dt I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms PRODUCT INFORMATION 3 BUV48, BUV48A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 BY205-400 33 Ω 1 pF RB (on) 180 µ H vcc V Gen 68 Ω 1 kΩ 0.02 µ F +5V 1 kΩ 2N2222 TUT BY205-400 Vclamp = 400 V 270 Ω BY205-400 1 kΩ 2N2904 5X BY205-400 Adjust pw to obtain IC 47 Ω For IC < 6 A For IC ≥ 6 A VCC = 50 V VCC = 100 V 100 Ω D44H11 V BE(off) Figure 3. Inductive-Load Switching Test Circuit I B(on) A - B = tsv B - C = trv D - E = tfi E - F = tti B - E = txo IB A (90%) Base Current C 90% V CE B 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF. B. Resistors must be noninductive types. Figure 4. Inductive-Load Switching Waveforms PRODUCT INFORMATION 4 BUV48, BUV48A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 100 VCE = 5 V TCP765AA COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 5·0 TCP765AB hFE - Typical DC Current Gain TC = 125°C TC = 25°C TC = -65°C 4·0 IC = 5 A IC = 10 A IC = 15 A TC = 25°C 3·0 10 2·0 1·0 1·0 0·1 1·0 IC - Collector Current - A 10 20 0 0·1 1·0 IB - Base Current - A 10 Figure 5. Figure 6. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 5·0 TCP765AI BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1·6 VBE(sat) - Base-Emitter Saturation Voltage - V 1·5 IC = 15 A 1·4 1·3 I C = 10 A 1·2 1·1 1·0 0·9 0·8 IC = 5 A TCP765AC 4·0 IC = 5 A IC = 10 A IC = 15 A TC = 100°C 3·0 2·0 1·0 0 0·1 1·0 IB - Base Current - A 10 0 1 2 3 4 5 6 IB - Base Current - A Figure 7. Figure 8. PRODUCT INFORMATION 5 BUV48, BUV48A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE 4·0 TCP765AD ICES - Collector Cut-off Current - µA 1·0 BUV48A VCE = 1000 V 0·1 BUV48 VCE = 850 V 0·01 -80 -60 -40 -20 0 20 40 60 80 100 120 140 TC - Case Temperature - °C Figure 9. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAP765AA IC - Collector Current - A 10 1·0 tp = tp = 0.1 10 µ s 50 µ s tp = 100 µ s tp = 500 µ s tp = 1 ms tp = 2 ms DC Operation 10 BUV48 BUV48A 100 1000 0·01 1·0 VCE - Collector-Emitter Voltage - V Figure 10. PRODUCT INFORMATION 6 BUV48, BUV48A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 4,1 4,0 15,2 14,7 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW PRODUCT INFORMATION 7 BUV48, BUV48A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 8