polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance
TM
F1240
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Single Ended Package Style AT HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 30V
o
-65 o C to 150o C
6A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Pow er Gain Drain Efficiency Load Mismatch Tolerance MIN 10 60 TYP
40WATTS OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz
η
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdow n Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forw ard Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 2.4 0.35 22.5 120 18 90 MIN 40 3 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.15 A , Vds = 12.5 V, Vds = 0 V, Ids = 0.3 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds
Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 24 A Vgs = 20V, Vds = 10V Vds = 12.5 V, Vgs = 0V, F = 1 MHz Vds = 12.5 V, Vgs = 0V, F = 1 MHz Vds = 12.5 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION
8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com
F1240
POUT VS PIN GRAPH
F1240 POUT VS PIN F=175 MHZ; IDQ=1.2A; VDS=12.5V
45 40 35 30 25 20 15 10 0 1 2 3 4 5
P OUT
CAPACITANCE VS VOLTAGE
F1C 3DI E CAPACITANCE
1000
23. 0 0 21. 0 0 19. 0 0 Efficiency = 65% 17. 0 0
100
Coss
Ciss
15. 0 0 13. 0 0 11. 0 0 9.00 6
GAIN
10 0 5 10 15
VDS IN VOLTS
Crss
20
25
30
P IN IN WATT S
IV CURVE
F1C 3 D IE I V CURVE
25 100
ID AND GM VS VGS
F1C 3 DIE GM & ID vs VGS
20
Id
15 10
10
Gm
1
5
0 0 2 4 6 8 10
Vds in Volts
12
14
16
18
20 0.1 0 2 4 6
Vgs in Volts
8
10
12
14
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
POLYFET RF DEVICES
REVISION
8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com
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