L8711P

polyfet rf devices L8711P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 7.0 Watts Single Ended Package Style S08 P HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 60 Watts Junction to Case Thermal Resistance o 2.50 C/W Maximum Junction Temperature o 150 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 36 V Drain to Source Voltage 36 V Gate to Source Voltage 20 V 8.0 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 50 TYP 7.0 WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.40 A, Vds = Idq = 0.40 A, Vds = 7.5 V, F = 500 MHz 7.5 V, F = 500 MHz η VSWR Idq = 0.40 A, Vds = 7.5 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 1.7 0.40 13.00 50.0 2.0 40.0 MIN 40 2.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.20 mA, Vgs = 0V Vds = 7.5 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.20 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 8.00 A Vgs = 20V, Vds = 10V Vds = Vds = Vds = 7.5 Vgs = 0V, F = 1 MHz 7.5 Vgs = 0V, F = 1 MHz 7.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 12/12/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com L8711P POUT VS PIN GRAPH L8711P Pin vs Pout F=500 MHZ; Idq=.4;Vds=7.5Vdc 10 15 1000 CAPACITANCE VS VOLTAGE L1C 1DIE CAPACITANCE 8 14 100 6 Pout Gain 13 Ciss Coss 12 11 10 4 2 Crss 10 Efficiency@7W=50% 0 0 0.2 0.4 0.6 0.8 1 Pin in watts 9 1 0 5 10 15 20 25 30 VDS IN VOLTS IV CURVE L1C 1 DIE IV 16 14 12 ID IN AMPS 10 8 10 100 ID & GM VS VGS L 1C 1 DIE ID, GM vs VG ID 6 4 2 0 0 2 4 6 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 16 18 20 1 G M vg=2v Vg=4v vg=10v vg=12v 0 2 4 6 8 Vgs in Volts 10 12 14 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches 12/12/2001 POLYFET RF DEVICES REVISION 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com