polyfet rf devices
LC801
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 20.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.40 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V
3.0 A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 13 55 TYP
20.0 WATTS OUTPUT )
MAX UNITS dB % 20:1 TEST CONDITIONS Idq = 0.40 A, Vds = 28.0 V, F = Idq = 0.40 A, Vds = 28.0 V, F =
500 MHz 500 MHz
η
VSWR
Relative Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 0.8 0.90 5.50 30.0 1.0 15.0 MIN 65 1.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.10 mA, Vgs = 0V
Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.10 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 2.50 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 05/01/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
LC801
POUT VS PIN GRAPH
LC801 Pin vs Pout Freq=500MHz, Vds=28Vdc, Idq=.2A
30 18 17 25 16 20
10 100
CAPACITANCE VS VOLTAGE
L2B 1 DIE CAPACITANCE
Ciss Coss
Pout
15 14 13
15
1
Crss
10 5
12
Efficiency = 55%
Gain
11 10
0.1 0 5 10 15 20 25 30
0 0 0.5 1 1.5 Pin in Watts 2 2.5 3
9
VDS IN VOLTS
IV CURVE
L2A 1 DICE IV
6
100
ID & GM VS VGS
L 2B 1 DIE ID, GM vs VG
5
4 ID IN AMPS
10
ID
3
2
1
1
GM
0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 vg=10v 16 18 vg=12v 20
0.1 0 2 4 6 8 10 12 14
Vgs in Volts
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 05/01/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
很抱歉,暂时无法提供与“LC801”相匹配的价格&库存,您可以联系我们找货
免费人工找货