polyfet rf devices
LX401
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 60.0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 120 Watts Junction to Case Thermal Resistance o 1.30 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V
7.0 A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 55 TYP
60.0 WATTS OUTPUT )
MAX UNITS dB % 20:1 TEST CONDITIONS Idq = 0.20 A, Vds = 28.0 V, F = 1,000 MHz Idq = 0.20 A, Vds = 28.0 V, F = 1,000 MHz
η
VSWR
Relative Idq = 0.20 A, Vds = 28.0 V, F = 1,000 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 2.7 0.28 17.00 80.0 4.0 50.0 MIN 65 1.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.25 mA, Vgs = 0V
Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.30 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 8.00 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 04/27/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
LX401
POUT VS PIN GRAPH
LX401 Pin vs Pout Freq=1000MHz, VDS=28V, Idq=.6A
70 14.00 13.50 60 13.00 50 1000
CAPACITANCE VS VOLTAGE
L4 1DIE CAPACITANCE
Pout
12.50 12.00 11.50 100
Ciss Coss
40
30
11.00
Gain
20 10.50
10
Efficiency = 55%
10
10.00 9.50
Crss
1 0 5 10 15 20 25 30
0 0 1 2 3 4 PIN IN WATTS 5 6 7 8
9.00
VDS IN VOLTS
IV CURVE
L4 1 DIE IV
18 16 14 12 ID IN AMPS 10 8 6 4 2 0 0 2 4 6 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 16 18 20
0.1 0 2 4 1 10 100
ID & GM VS VGS
L4 1 DIE ID, GM vs VG
ID
G
vg=2v
Vg=4v
vg=10v
vg=12v
Vgs in Volts
6
8
10
12
14
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 04/27/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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