SK722

polyfet rf devices SK722 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. "Polyfet"TM process SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 190 Watts Junction to Case Thermal Resistance o 0.85 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 36 V Drain to Source Voltage 36 V Gate to Source Voltage 20 V 19.0 A RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 55 TYP 40.0 WATTS OUTPUT ) MAX UNITS TEST CONDITIONS dB % 20:1 Relative Idq = 0.80 A, Vds = Idq = 0.80 A, Vds = 12.5 V, F = 400 MHz 12.5 V, F = 400 MHz 400 MHz η VSWR Idq = 0.80 A, Vds = 12.5 V, F = ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 2 2.6 0.35 19.00 90.0 7.0 110.0 MIN 36 2.0 1 5 TYP MAX UNITS TEST CONDITIONS V mA uA V Mho Ohm Amp pF pF pF Ids = 40.00 mA, Vgs = 0V Vds = 12.5 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.20 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 5.50 A Vgs = 20V, Vds = 10V Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com SK722 POUT VS PIN GRAPH SK722 Pout/Gain vs Pin Freq=400MHz, Vds=12.5Vdc, Idq=.8A 60 12.00 CAPACITANCE VS VOLTAGE S1C 2 DICE CAPACITANCE 1000 50 11.00 Coss 100 40 Pout 10.00 Ciss 30 Gain 20 Efficiency = 65% 10 7.00 8.00 9.00 10 Crss 1 0 0 2 4 Pin in Watts 6 8 10 6.00 0 2 4 6 8 10 12 14 16 18 20 VDS IN VOLTS IV CURVE S1C 2 DIE IV 20 18 16 14 ID IN AMPS 12 10 8 6 4 2 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VD INVO S vg=8v S Vg=6v LT 14 0 16 18 vg=12v 20 ID & GM VS VGS S1C 2 DIE ID & GM Vs VG 100.00 Id in amps; Gm in mhos Id 10.00 gM 1.00 0.10 0 2 4 6 8 10 Vgs in Volts 12 14 16 18 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com