AR1101S10

POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 RECTIFIER DIODE AR1101 Repetitive voltage up to Mean forward current Surge current 1000 V 2250 A 28 kA FINAL SPECIFICATION ago 02 - ISSUE : 05 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I RRM RSM RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 175 175 175 1000 1100 50 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° sin ,50 Hz, Tc=85°C, double side cooled Sine wave, 10 ms without reverse voltage Forward current = 1800 A 175 2250 2130 28 3920 x 1E3 25 175 175 1.07 0.75 0.125 A A kA A²s V V mohm F (AV) FSM I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 175 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AR1101 S 10 standard specification Junction to heatsink, double side cooled Case to heatsink, double side cooled 37 7 -30 / 11.8 300 175 / 13.2 °C/kW °C/kW °C kN g VRRM/100 AR1101 RECTIFIER DIODE FINAL SPECIFICATION ago 02 - ISSUE : 05 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SQUARE WAVE Th [°C] 190 170 150 130 110 90 30° 70 50 0 500 1000 60° 90° 120° 180° DC 1500 IF(AV) [A] 2000 2500 3000 PF(AV) [W] 4000 DC 3000 90° 60° 30° 120° 180° 2000 1000 0 0 500 1000 1500 2000 IF(AV) [A] 2500 3000 3500 4000 AR1101 RECTIFIER DIODE FINAL SPECIFICATION ago 02 - ISSUE : 05 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SINE WAVE Th [°C] 190 170 150 130 110 90 70 50 0 500 1000 1500 IF(AV) [A] 2000 2500 3000 30° 60° 90° 120° 180° PF(AV) [W] 4000 3000 180° 2000 60° 30° 90° 120° 1000 0 0 500 1000 1500 IF(AV) [A] 2000 2500 3000 AR1101 RECTIFIER DIODE FINAL SPECIFICATION ago 02 - ISSUE : 05 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 175 °C SURGE CHARACTERISTIC Tj = 175 °C 7000 6000 5000 ITSM [kA] 0.6 1.1 Forward Voltage [V] 1.6 4000 3000 2000 1000 0 30 25 20 15 10 5 0 1 10 n° cycles 100 Forward Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 40.0 35.0 30.0 Zth j-h [°C/kW] 25.0 20.0 15.0 10.0 5.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.