POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
RECTIFIER DIODE
AR649
Repetitive voltage up to Mean forward current Surge current 2500 V 4645 A 45 kA
TARGET SPECIFICATION
nov 02 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj [°C]
Value
Unit
BLOCKING
V V I
RRM RSM RRM
Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM
175 175 175
2500 2600 100
V V mA
CONDUCTING
I I I
F (AV)
Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled 180° sin ,50 Hz, Tc=85°C, double side cooled Sine wave, 10 ms without reverse voltage Forward current = 2000 A 175
4645 4515 45 10125 x 1E3 175 175 175 0.90 0.70 0.100
A A kA A²s V V mohm
F (AV) FSM
I² t V V r
FM F(TO) F
SWITCHING
t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 175 µs µC A
MOUNTING
R th(j-h) R th(c-h) T F
j
Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AR649 S 25 standard specification
Junction to heatsink, double side cooled Case to heatsink, double side cooled
14 3 -30 / 35.0 850 175 / 40.0
°C/kW °C/kW °C kN g
VRRM/100
AR649 RECTIFIER DIODE
TARGET SPECIFICATION nov 02 - ISSUE : 03
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
DISSIPATION CHARACTERISTICS SQUARE WAVE
Th [°C] 190 170 150 130 110
30°
90
60°
70 50 0 1000 2000
90°
120°
180° DC
3000
4000
5000
6000
7000
IF(AV) [A]
PF(AV) [W] 10000 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 0 1000 2000 3000 4000 5000 6000 7000 IF(AV) [A]
30° 60° 90° 120° 180° DC
AR649 RECTIFIER DIODE
TARGET SPECIFICATION nov 02 - ISSUE : 03
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
DISSIPATION CHARACTERISTICS SINE WAVE
Th [°C] 190 170 150 130 110
30°
90 70
60°
90° 120°
180°
50 0 1000 2000 3000 IF(AV) [A] 4000 5000 6000
PF(AV) [W] 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 0 1000 2000 3000 IF(AV) [A] 4000 5000 6000
30° 60° 90° 120° 180°
AR649 RECTIFIER DIODE
TARGET SPECIFICATION nov 02 - ISSUE : 03
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
FORWARD CHARACTERISTIC Tj = 175 °C 14000 12000 10000 Forward Current [A] ITSM [kA] 8000 6000 4000 2000 5 0 0.6 1.1 1.6 2.1 Forward Voltage [V] 0 1 50 45 40 35 30 25 20 15 10
SURGE CHARACTERISTIC Tj = 175 °C
10 n° cycles
100
TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 16.0 14.0 12.0 Zth j-h [°C/kW] 10.0 8.0 6.0 4.0 2.0 0.0 0.001
0.01
0.1 t[s]
1
10
100
Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvementPOSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.
很抱歉,暂时无法提供与“AR649S25”相匹配的价格&库存,您可以联系我们找货
免费人工找货