POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
RECTIFIER DIODE
AR670
Repetitive voltage up to Mean forward current Surge current 4400 V 2280 A 22 kA
FINAL SPECIFICATION
nov 02 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj [°C]
Value
Unit
BLOCKING
V V I
RRM RSM RRM
Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM
150 150 150
4400 4500 200
V V mA
CONDUCTING
I I I
F (AV)
Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled 180° sin ,50 Hz, Tc=85°C, double side cooled Sine wave, 10 ms without reverse voltage Forward current = 3000 A 150
2280 2220 22 2420 x 1E3 25 150 150 1.50 0.80 0.210
A A kA A²s V V mohm
F (AV) FSM
I² t V V r
FM F(TO) F
SWITCHING
t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 150 µs µC A
MOUNTING
R th(j-h) R th(c-h) T F
j
Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AR670 S 44 standard specification
Junction to heatsink, double side cooled Case to heatsink, double side cooled
21 6 -30 / 22.0 500 150 / 24.5
°C/kW °C/kW °C kN g
VRRM/100
AR670 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 03
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
DISSIPATION CHARACTERISTICS SQUARE WAVE
Th [°C] 150 140 130 120 110 100 90 80 70 60 50 0 500 1000 1500 2000 2500 3000 3500 IF(AV) [A]
60° 90° 120° 180° DC 30°
PF(AV) [W] 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 500 1000 1500 2000 2500 3000 3500 IF(AV) [A]
30° 60° 120° 90° 180° DC
AR670 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 03
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
DISSIPATION CHARACTERISTICS SINE WAVE
Th [°C] 170 150 130 110 90
30° 60° 90°
70 50 0 500 1000 1500
120°
180°
2000
2500
3000
3500
IF(AV) [A]
PF(AV) [W] 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 500 1000 1500 2000 2500 3000 3500 IF(AV) [A]
30° 60° 120° 90° 180°
AR670 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 03
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
FORWARD CHARACTERISTIC Tj = 150 °C
SURGE CHARACTERISTIC Tj = 150 °C
7000 6000
25
20 Forward Current [A] 5000 ITSM [kA] 0.6 1.1 1.6 Forward Voltage [V] 2.1 2.6 4000 3000 2000 1000 0 5 15
10
0 1 10 n° cycles 100
TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 25.0
20.0
Zth j-h [°C/kW]
15.0
10.0
5.0
0.0 0.001
0.01
0.1 t[s]
1
10
100
Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.
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