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AR709LTS10

AR709LTS10

  • 厂商:

    POSEICO

  • 封装:

  • 描述:

    AR709LTS10 - RECTIFIER DIODE - Power Semiconductors

  • 数据手册
  • 价格&库存
AR709LTS10 数据手册
POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 RECTIFIER DIODE AR709LT Repetitive voltage up to Mean forward current Surge current 1000 V 9600 A 85 kA FINAL SPECIFICATION nov 02 - ISSUE : 02 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I RRM RSM RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 190 190 190 1000 1100 200 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° sin ,50 Hz, Tc=85°C, double side cooled Sine wave, 10 ms without reverse voltage Forward current = 6000 A 190 9600 9500 85 36125 x 1E3 25 190 190 1.14 0.70 0.033 A A kA A²s V V mohm F (AV) FSM I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 190 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled Case to heatsink, double side cooled 9.5 2 -30 / 46.0 1150 190 / 54.0 °C/kW °C/kW °C kN g ORDERING INFORMATION : AR709LT S 10 standard specification VRRM/100 AR709LT RECTIFIER DIODE FINAL SPECIFICATION nov 02 - ISSUE : 02 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SQUARE WAVE Th [°C] 190 170 150 130 110 90 70 50 0 2000 4000 6000 8000 10000 12000 14000 IF(AV) [A] 30° 60° 120° 90° 180° DC PF(AV) [W] 16000 DC 14000 12000 60° 120° 90° 180° 10000 8000 6000 4000 2000 0 0 2000 4000 6000 8000 10000 12000 14000 IF(AV) [A] 30° AR709LT RECTIFIER DIODE FINAL SPECIFICATION nov 02 - ISSUE : 02 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SINE WAVE Th [°C] 210 190 170 150 130 110 90 70 50 0 2000 4000 6000 8000 10000 12000 14000 IF(AV) [A] 30° 60° 90° 120° 180° PF(AV) [W] 16000 180° 14000 12000 10000 8000 6000 4000 2000 0 0 2000 4000 6000 30° 60° 90° 120° 8000 10000 12000 14000 IF(AV) [A] AR709LT RECTIFIER DIODE FINAL SPECIFICATION nov 02 - ISSUE : 02 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 190 °C SURGE CHARACTERISTIC Tj = 190 °C 35000 30000 25000 90 80 70 Forward Current [A] 60 ITSM [kA] 0.6 0.8 1 1.2 1.4 1.6 20000 15000 10000 5000 0 Forward Voltage [V] 50 40 30 20 10 0 1 10 n° cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 10.0 9.0 8.0 7.0 Zth j-h [°C/kW] 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.
AR709LTS10 价格&库存

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