AR709S10

POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 RECTIFIER DIODE AR709 Repetitive voltage up to Mean forward current Surge current 1000 V 8710 A 85 kA FINAL SPECIFICATION set 02 - ISSUE : 03 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I RRM RSM RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 190 190 190 1000 1100 200 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° sin ,50 Hz, Tc=85°C, double side cooled Sine wave, 10 ms without reverse voltage Forward current = 6000 A 190 8710 8420 85 36125 x 1E3 25 190 190 1.14 0.70 0.033 A A kA A²s V V mohm F (AV) FSM I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 190 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AR709 S 10 standard specification Junction to heatsink, double side cooled Case to heatsink, double side cooled 11 2 -30 / 46.0 1700 190 / 54.0 °C/kW °C/kW °C kN g VRRM/100 AR709 RECTIFIER DIODE FINAL SPECIFICATION set 02 - ISSUE : 03 POSEICO POS EICO SPA POwer SEmiconduc tors Italian COrporation DISSIPATION CHARACTERISTICS SQUARE WAVE Th [°C] 190 170 150 130 110 90 30° 60° 90° 120° 180° DC 70 50 0 2000 4000 6000 IF(AV) [A] 8000 10000 12000 PF(AV) [W] 14000 12000 10000 8000 30° 60° 90° 120° 180° DC 6000 4000 2000 0 0 2000 4000 6000 IF(AV) [A] 8000 10000 12000 AR709 RECTIFIER DIODE FINAL SPECIFICATION set 02 - ISSUE : 03 POSEICO POS EICO SPA POwer SEmiconduc tors Italian COrporation DISSIPATION CHARACTERISTICS SINE WAVE Th [°C] 210 190 170 150 130 30° 110 60° 90 70 50 0 2000 4000 90° 120° 180° 6000 IF(AV) [A] 8000 10000 12000 PF(AV) [W] 14000 12000 10000 120° 180° 8000 60° 90° 6000 4000 2000 0 0 2000 30° 4000 6000 IF(AV) [A] 8000 10000 12000 AR709 RECTIFIER DIODE FINAL SPECIFICATION set 02 - ISSUE : 03 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 190 °C SURGE CHARACTERISTIC Tj = 190 °C 30000 25000 Forward Current [A] 20000 ITSM [kA] 0.6 0.8 1 1.2 1.4 1.6 15000 10000 5000 0 Forward Voltage [V] 90 80 70 60 50 40 30 20 10 0 1 10 n° cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 12.0 10.0 8.0 Zth j-h [°C/kW] 6.0 4.0 2.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.