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AR749LTS25

AR749LTS25

  • 厂商:

    POSEICO

  • 封装:

  • 描述:

    AR749LTS25 - RECTIFIER DIODE - Power Semiconductors

  • 数据手册
  • 价格&库存
AR749LTS25 数据手册
POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 RECTIFIER DIODE AR749LT Repetitive voltage up to Mean forward current Surge current 2500 V 5180 A 70 kA FINAL SPECIFICATION nov 02 - ISSUE : 02 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I RRM RSM RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 175 175 175 2500 2600 150 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° sin ,50 Hz, Tc=85°C, double side cooled Sine wave, 10 ms without reverse voltage Forward current = 3000 A 175 5180 5030 70 24500 x 1E3 25 175 175 1.30 0.65 0.140 A A kA A²s V V mohm F (AV) FSM I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 175 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled Case to heatsink, double side cooled 9.5 2 -30 / 46.0 1150 175 / 54.0 °C/kW °C/kW °C kN g ORDERING INFORMATION : AR749LT S 25 standard specification VRRM/100 AR749LT RECTIFIER DIODE FINAL SPECIFICATION nov 02 - ISSUE : 02 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SQUARE WAVE Th [°C] 190 170 150 130 110 90 70 50 0 1000 2000 3000 4000 IF(AV) [A] 5000 6000 7000 8000 30° 60° 90° 120° 180° DC PF(AV) [W] 14000 12000 120° DC 180° 10000 60° 90° 8000 6000 4000 2000 0 0 1000 30° 2000 3000 4000 IF(AV) [A] 5000 6000 7000 8000 AR749LT RECTIFIER DIODE FINAL SPECIFICATION nov 02 - ISSUE : 02 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SINE WAVE Th [°C] 190 170 150 130 110 90 70 50 0 1000 2000 3000 IF(AV) [A] 4000 5000 6000 30° 60° 90° 120° 180° PF(AV) [W] 14000 12000 10000 8000 30° 60° 120° 90° 180° 6000 4000 2000 0 0 2000 4000 IF(AV) [A] 6000 8000 AR749LT RECTIFIER DIODE FINAL SPECIFICATION nov 02 - ISSUE : 02 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 175 °C 18000 16000 14000 Forward Current [A] 12000 10000 8000 6000 4000 2000 0 0.6 1.1 1.6 2.1 2.6 3.1 Forward Voltage [V] ITSM [kA] 80 70 60 50 40 30 20 10 0 1 SURGE CHARACTERISTIC Tj = 175 °C 10 n° cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 10.0 9.0 8.0 7.0 Zth j-h [°C/kW] 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.
AR749LTS25 价格&库存

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