AR771S50

POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 RECTIFIER DIODE AR771 Repetitive voltage up to Mean forward current Surge current 5000 V 3680 A 50 kA FINAL SPECIFICATION nov 02 - ISSUE : 03 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I RRM RSM RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 150 150 150 5000 5100 200 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° sin ,50 Hz, Tc=85°C, double side cooled Sine wave, 10 ms without reverse voltage Forward current = 3000 A 150 3680 3300 50 12500 x 1E3 25 150 150 1.45 0.80 0.170 A A kA A²s V V mohm F (AV) FSM I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current I= 1600 A di/dt= 2A/µs 150 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AR771 S 50 standard specification Junction to heatsink, double side cooled Case to heatsink, double side cooled 11 2 -30 / 46.0 1700 150 / 54.0 °C/kW °C/kW °C kN g VRRM/100 AR771 RECTIFIER DIODE FINAL SPECIFICATION nov 02 - ISSUE : 03 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SQUARE WAVE Th [°C] 150 140 130 120 110 100 90 80 70 60 50 0 200 400 600 IF(AV) [A] 800 1000 1200 60° 90° 120° 180° DC 30° PF(AV) [W] 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 400 600 IF(AV) [A] 800 1000 1200 30° 90° 60° 120° 180° DC AR771 RECTIFIER DIODE FINAL SPECIFICATION nov 02 - ISSUE : 03 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SINE WAVE Th [°C] 170 150 130 110 90 70 30° 60° 90° 120° 180 50 0 200 400 600 IF(AV) [A] 800 1000 1200 PF(AV) [W] 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 400 600 IF(AV) [A] 800 1000 1200 30° 60° 180 90° 120° AR771 RECTIFIER DIODE FINAL SPECIFICATION nov 02 - ISSUE : 03 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 150 °C SURGE CHARACTERISTIC Tj = 150 °C 12000 10000 Forward Current [A] 8000 6000 4000 2000 0 0.6 1.1 1.6 2.1 2.6 Forward Voltage [V] ITSM [kA] 60 50 40 30 20 10 0 1 10 n° cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 12.0 10.0 Zth j-h [°C/kW] 8.0 6.0 4.0 2.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.