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ARF360

ARF360

  • 厂商:

    POSEICO

  • 封装:

  • 描述:

    ARF360 - FAST RECOVERY DIODE - Power Semiconductors

  • 数据手册
  • 价格&库存
ARF360 数据手册
POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY FINAL SPECIFICATION mar 03 - ISSUE : 4 ARF360 Repetitive voltage up to Mean forward current Surge current 3300 V 290 A 5 kA Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I V RRM RSM RRM DC LINK Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage V=VRRM 125 125 125 125 3300 3400 50 1500 V V mA V CONDUCTING I I I F (AV) F (AV) FSM Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin, 50 Hz, Th=55°C, double side cooled 180° sin, 50 Hz, Th=55°C, double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = 1200 A 125 290 300 4.5 101 x1E3 125 125 125 6.78 1.86 4.100 A A kA A²s V V mohm I² t V V r FM F(TO) F SWITCHING Q rr I rr t rr Q rr I rr s E V OFF FR Reverse recovery charge Peak reverse recovery current Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Turn off energy dissipation Peak forward recovery IF= VR = IF= di/dt= VR = 500 A 50 V 500 A 1000 A/µs 1800 V di/dt= 100 A/µs 125 125 55 85 µC A µs 226 125 545 µC A J di/dt= 400 A/µs 125 V MOUNTING R th(j-c) R th(c-h) T F j Thermal impedance Thermal impedance Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled Case to heatsink, double side cooled 50 15 -30 / 125 8.0 / 9.0 85 °C/kW °C/kW °C kN g ORDERING INFORMATION : ARF360 S 33 standard specification VRRM/100 ARF360 FAST RECOVERY DIODE FINAL SPECIFICATION mar 03 - ISSUE : 4 POSEICO POSEICO SPA P Ower SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 125 °C SURGE CHARACTERISTIC Tj = 125 °C 1000 900 800 Forward Current [A] 700 ITSM [kA] 1 3 5 Forward Voltage [V] 7 600 500 400 300 200 100 0 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 1 10 n° cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 60.0 50.0 Zth j-h [°C/kW] 40.0 30.0 20.0 10.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.
ARF360 价格&库存

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