ARF370S45

POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 FAST RECOVERY DIODE ARF370 Repetitive voltage up to Mean forward current Surge current 4500 V 485 A 4 kA FINAL SPECIFICATION feb 97 - ISSUE : 04 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I RRM RSM RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 150 150 150 4500 4600 50 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = 1200 A 150 485 490 4 80 x1E3 25 150 150 3.4 1.74 1.700 A A kA A²s V V mohm F (AV) FSM I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr s V FR Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Peak forward recovery IF= di/dt= VR = 1000 A 100 A/µs 100 V 150 5 700 280 0.5 µs µC A di/dt= 400 A/µs 150 80 V MOUNTING R th(j-h) T F j Thermal impedance Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled 52 -30 / 150 8.4 / 9.4 280 °C/kW °C kN g ORDERING INFORMATION : ARF370 S 45 standard specification VRRM/100 ARF370 FAST RECOVERY DIODE FINAL SPECIFICATION feb 97 - ISSUE : 04 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SQUARE WAVE 2000 1800 1600 Power Dissipation [W] 1400 1200 1000 800 600 400 200 0 0 100 200 300 400 500 600 700 60° 30° 90° 120° 180° DC Mean Forward Current [A] SINE WAVE 2000 1800 1600 Power Dissipation [W] 1400 1200 1000 800 600 400 200 0 0 100 200 300 400 500 600 700 30° 60° 90° 120° 180° Mean Forward Current [A] ARF370 FAST RECOVERY DIODE FINAL SPECIFICATION feb 97 - ISSUE : 04 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation SWITCHING CHARACTERISTICS FORWARD RECOVERY VOLTAGE 180 160 Tj 150 °C 140 120 VFR [V] 100 80 60 Tj = 25 °C IF VFR 40 20 0 0 200 400 600 di/dt [A/µs] 800 1000 1200 VF REVERSE RECOVERY CHARGE - Tj = 150° 1400 1000 A REVERSE RECOVERY CURRENT - Tj = 150° 800 700 600 500 A 1000 A 1200 1000 500 A 500 Irr [A] 400 300 200 100 0 250 A Qrr [µC] 800 600 250 A 400 200 0 0 100 200 di/dt [A/µs] 300 400 0 100 200 di/dt [A/µs] 300 400 ta = Irr / (di/dt) tb = trr - ta IF d i/d t ta tb Softness (s factor) s = tb / ta 25% di Irr Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) Irr Vr ARF370 FAST RECOVERY DIODE FINAL SPECIFICATION feb 97 - ISSUE : 04 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 150 °C SURGE CHARACTERISTIC Tj = 150 °C 1600 1400 1200 ITSM [kA] 1000 800 600 400 200 0 1.5 2.5 3.5 4.5 Forward Voltage [V] 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 1 10 n° cycles 100 Forward Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 60.0 50.0 Zth j-h [°C/kW] 40.0 30.0 20.0 10.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.