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ARF664S33

ARF664S33

  • 厂商:

    POSEICO

  • 封装:

  • 描述:

    ARF664S33 - FAST RECOVERY DIODE - Power Semiconductors

  • 数据手册
  • 价格&库存
ARF664S33 数据手册
POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY TARGET SPECIFICATION gen 03 - ISSUE : 1 ARF664 Repetitive voltage up to Mean forward current Surge current 3300 V 1000 A 18 kA Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I V RRM RSM RRM DC LINK Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage V=VRRM 125 125 125 125 3300 3400 V V mA 1500 V CONDUCTING I I I F (AV) F (AV) FSM Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = 1570 A 125 1000 1025 18 1620 x1E3 25 125 125 3.55 1.80 0.70 A A kA A²s V V mohm I² t V V r FM F(TO) F SWITCHING Q rr I rr t rr Q rr I rr s E V OFF FR Reverse recovery charge Peak reverse recovery current Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Turn off energy dissipation Peak forward recovery IF= VR = IF= di/dt= VR = 1000 A 100 V 1100 A 500 A/µs V di/dt= 250 A/µs 125 125 µC A µs 2000 µC A 125 1100 J di/dt= 500 A/µs 125 V MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance Thermal impedance Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled Case to heatsink, double side cooled 21 6 00 / 125 °C/kW °C/kW °C kN g 22.0 / 24.5 520 ORDERING INFORMATION : ARF664 S 33 standard specification VRRM/100 ARF664 FAST RECOVERY DIODE TARGET SPECIFICATION gen 03 - ISSUE : 1 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 125 °C 20 5000 4500 4000 Forward Current [A] 3500 ITSM [kA] 3000 2500 2000 1500 1000 500 0 0.7 1.7 2.7 3.7 4.7 Forward Voltage [V] 16 14 12 10 8 6 4 2 0 1 18 SURGE CHARACTERISTIC Tj = 125 °C 10 n° cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 25.0 20.0 Zth j-h [°C/kW] 15.0 10.0 5.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.
ARF664S33 价格&库存

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