ARF674S45

POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 FAST RECOVERY DIODE ARF674 Repetitive voltage up to Mean forward current Surge current 4500 V 945 A 15 kA FINAL SPECIFICATION feb 97 - ISSUE : 03 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I RRM RSM RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 125 125 125 4500 4600 80 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = 1570 A 125 945 940 15 1125 x1E3 25 125 125 3 1.90 0.700 A A kA A²s V V mohm F (AV) FSM I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr s V FR Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Peak forward recovery IF= di/dt= VR = 500 A 30 A/µs 100 V 125 8 600 150 0.4 µs µC A di/dt= 400 A/µs 42 V MOUNTING R th(j-h) T F j Thermal impedance Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled 21 -30 / 125 22.0 / 24.5 520 °C/kW °C kN g ORDERING INFORMATION : ARF674 S 45 standard specification VRRM/100 ARF674 FAST RECOVERY DIODE FINAL SPECIFICATION feb 97 - ISSUE : 03 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SQUARE WAVE 3500 DC 180° 120° 90° 3000 DC Power Dissipation [W] 2500 30° 60° 2000 1500 1000 500 0 0 200 400 600 800 1000 1200 1400 Mean Forward Current [A] SINE WAVE 3500 180° 120° 3000 60° 90° DC Power Dissipation [W] 2500 30° 2000 1500 1000 500 0 0 200 400 600 800 1000 1200 1400 Mean Forward Current [A] ARF674 FAST RECOVERY DIODE FINAL SPECIFICATION feb 97 - ISSUE : 03 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation SWITCHING CHARACTERISTICS FORWARD RECOVERY VOLTAGE 80 70 Tj = 125 °C 60 50 VFR [V] 40 30 20 10 0 0 200 400 600 di/dt [A/µs] 800 1000 1200 Tj = 25 °C IF VFR VF REVERSE RECOVERY CHARGE Tj = 125 °C REVERSE RECOVERY CURRENT Tj = 125 °C 3500 1000 A 1200 1000 A 3000 2500 Qrr [µC] 2000 1500 250 A 500 A 1000 500 A 800 Irr [A] 250 A 600 400 1000 500 0 0 100 di/dt 200 [A/µs] 300 400 200 0 0 100 200 di/dt [A/µs] 300 400 ta = Irr / (di/dt) tb = trr - ta IF d i/d t ta tb Softness (s factor) s = tb / ta 25% di Irr Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) Irr Vr ARF674 FAST RECOVERY DIODE FINAL SPECIFICATION feb 97 - ISSUE : 03 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 125 °C SURGE CHARACTERISTIC Tj = 125 °C 3000 2500 Forward Current [A] 2000 ITSM [kA] 1500 1000 500 0 1 1.5 2 2.5 3 3.5 4 Forward Voltage [V] 16 14 12 10 8 6 4 2 0 1 10 n° cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 25.0 20.0 Zth j-h [°C/kW] 15.0 10.0 5.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.