0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
ARF681S45

ARF681S45

  • 厂商:

    POSEICO

  • 封装:

  • 描述:

    ARF681S45 - FAST RECOVERY DIODE - Power Semiconductors

  • 数据手册
  • 价格&库存
ARF681S45 数据手册
POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 FAST RECOVERY DIODE FOR IGBT, IEGT, GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY ARF681 Repetitive voltage up to Mean forward current Surge current 4500 V 1145 A 25 kA TARGET SPECIFICATION mar 03 - ISSUE : 2 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I V RRM RSM RRM DC LINK Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage V=VRRM 125 125 125 125 4500 4600 150 2800 V V mA V CONDUCTING I I I F (AV) F (AV) FSM Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = =2000 A 125 1145 1185 25 3125 x1E3 125 125 125 3.55 1.95 0.800 A A kA A²s V V mohm I² t V V r FM F(TO) F SWITCHING Q rr I rr t rr Q rr I rr s E V OFF FR Reverse recovery charge Peak reverse recovery current Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Turn off energy dissipation Peak forward recovery IF= VR = IF= di/dt= VR = 1000 A 100 V 2100 A 1000 A/µs 1800 V di/dt= 250 A/µs 125 125 1500 730 µC A µs 2200 125 1150 µC A J di/dt= 400 A/µs 125 V MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance Thermal impedance Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled Case to heatsink, double side cooled 14.0 6.0 -30 / 125 35.0 / 40.0 850 °C/kW °C/kW °C kN g ORDERING INFORMATION : ARF681 S 45 standard specification VRRM/100 ARF681 FAST RECOVERY DIODE TARGET SPECIFICATION mar 03 - ISSUE : 2 POSEICO POSEICO SPA P Ower SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 125 °C 3500 3000 2500 20 ITSM [kA] 2000 1500 1000 500 0 1.2 2.2 3.2 4.2 Forward Voltage [V] 30 25 SURGE CHARACTERISTIC Tj = 125 °C Forward Current [A] 15 10 5 0 1 10 n° cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 16.0 14.0 12.0 Zth j-h [°C/kW] 10.0 8.0 6.0 4.0 2.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement ANSALDO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.
ARF681S45 价格&库存

很抱歉,暂时无法提供与“ARF681S45”相匹配的价格&库存,您可以联系我们找货

免费人工找货