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ARF771LT

ARF771LT

  • 厂商:

    POSEICO

  • 封装:

  • 描述:

    ARF771LT - FAST RECOVERY DIODE - Power Semiconductors

  • 数据手册
  • 价格&库存
ARF771LT 数据手册
POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY TARGET SPECIFICATION mar 03 - ISSUE : 2 ARF771LT Repetitive voltage up to Mean forward current Surge current 4500 V 1730 A 28 kA Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I V RRM RSM RRM DC LINK Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage V=VRRM 140 140 140 140 4500 4600 150 2800 V V mA V CONDUCTING I I I I² t V V r FM F(TO) F F (AV) F (AV) FSM Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = =2500 A 140 1730 1790 28 3920 x1E3 140 140 140 3.95 1.95 0.800 A A kA A²s V V mohm SWITCHING Q rr I t rr rr Reverse recovery charge Peak reverse recovery current Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min OFF FR IF= VR = IF= di/dt= VR = 2500 A 100 V 2500 A 1000 A/µs 2800 V di/dt= 250 A/µs 140 140 2400 µC A µs Q rr I s E V rr 3500 140 1500 µC A Turn off energy dissipation Peak forward recovery di/dt= 500 A/µs 140 7 65 J V MOUNTING R R T F th(j-h) th(c-h) j Thermal impedance Thermal impedance Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled Case to heatsink, double side cooled 9.5 2 -30 / 140 46.0 1150 / 54.0 °C/kW °C/kW °C kN g ORDERING INFORMATION : ARF771LT S 45 standard specification VRRM/100 ARF771LT FAST RECOVERY DIODE TARGET SPECIFICATION mar 03 - ISSUE : 2 POSEICO POSEICO SPA P Ower SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 140 °C 3500 3000 2500 20 ITSM [kA] 2000 1500 1000 500 0 1.2 2.2 3.2 4.2 Forward Voltage [V] 30 25 SURGE CHARACTERISTIC Tj = 140 °C Forward Current [A] 15 10 5 0 1 10 n° cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 10.0 9.0 8.0 7.0 Zth j-h [°C/kW] 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.
ARF771LT 价格&库存

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