POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
PHASE CONTROL THYRISTOR
AT1004
Repetitive voltage up to Mean on-state current Surge current 1600 V 1545 A 24.6 kA
FINAL SPECIFICATION
feb 97 - ISSUE : 06
Symbol
Characteristic
Conditions
Tj [°C]
125 125 125
Value
Unit
BLOCKING
V V V I I
RRM RSM DRM RRM DRM
Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Repetitive peak reverse current Repetitive peak off-state current V=VRRM V=VDRM
1600 1700 1600 50 50
V V V mA mA
125 125
CONDUCTING
I I I V V r
T (AV) T (AV) TSM
Mean on-state current Mean on-state current Surge on-state current I² t On-state voltage Threshold voltage On-state slope resistance
180° sin, 50 Hz, Th=55°C, double side cooled 180° sin, 50 Hz, Tc=85°C, double side cooled sine wave, 10 ms without reverse voltage On-state current = 2900 A 25 125 125 125
1545 1255 24.6 3026 x1E3 1.63 0.92 0.216
A A kA A²s V V mohm
I² t
T T(TO) T
SWITCHING
di/dt dv/dt td tq Q rr I rr I I
H L
Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical
From 75% VDRM up to 1650 A, gate 10V 5ohm Linear ramp up to 70% of VDRM VD=100V, gate source 25V, 10 ohm , tr=.5 µs dV/dt = 20 V/µs linear up to 75% VDRM di/dt=-20 A/µs, I= 1080 A VR= 50 V VD=5V, gate open circuit VD=5V, tp=30µs
125 125 25 125 25 25
200 500 1.1 250
A/µs V/µs µs µs µC A
300 700
mA mA
GATE
V I V V I V P P
GT GT GD FGM FGM RGM GM G
Gate trigger voltage Gate trigger current Non-trigger gate voltage, min. Peak gate voltage (forward) Peak gate current Peak gate voltage (reverse) Peak gate power dissipation Average gate power dissipation
VD=5V VD=5V VD=VDRM
25 25 125
3.5 300 0.25 30 10 5
V mA V V A V W W
Pulse width 100 µs
150 2
MOUNTING
R R T F
th(j-h) th(c-h) j
Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AT1004 S 16 standard specification
Junction to heatsink, double side cooled Case to heatsink, double side cooled
26 6 -30 / 125 18.0 / 20.0 500
°C/kW °C/kW °C kN g
VDRM&VRRM/100
AT1004 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION feb 97 - ISSUE : 06
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
DISSIPATION CHARACTERISTICS SQUARE WAVE
Th [°C] 130 120 110 100 90 80 70 60 50 0 500
30° 60° DC
90°
120°
180°
1000
1500
2000
2500
IF(AV) [A]
PF(AV) [W] 3000
DC
2500
90° 120°
180°
2000
30°
60°
1500 1000 500 0 0 500 1000 1500 2000 2500 IF(AV) [A]
AT1004 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION feb 97 - ISSUE : 06
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
DISSIPATION CHARACTERISTICS SINE WAVE
Th [°C] 130 120 110 100 90 80 70
30° 60° 90°
60 50 0 500 1000 IF(AV) [A]
120°
1500
2000
PF(AV) [W] 3000
180°
2500 2000 1500 1000 500 0 0 500 1000
60° 30°
90°
120°
1500
2000
IF(AV) [A]
AT1004 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION feb 97 - ISSUE : 06
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
ON-STATE CHARACTERISTIC Tj = 125 °C
SURGE CHARACTERISTIC Tj = 125 °C
5000 4500 4000 On-state Current [A] 3500 ITSM [kA] 3000 2500 2000 1500 1000 500 0 0.6 1.1 1.6 On-state Voltage [V]
30
25
20
15
10
5
0 1 10 n° cycles 100
TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED
30.0
25.0
Zth j-h [°C/kW]
20.0
15.0
10.0
5.0
0.0 0.001
0.01
0.1 t[s]
1
10
100 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.
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