BCR08AS-8

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR08AS-8 OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 1.5±0.1 2.5±0.1 1 2 3 0.8 MIN 0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 0.4 +0.03 –0.05 • • • • IT (RMS) ..................................................................... 0.8A VDRM ....................................................................... 400V IFGT !, IRGT !, IRGT # ............................................. 5mA IFGT # ..................................................................... 10mA 3 1 SOT-89 APPLICATION Hybrid IC, solid state relay, control of household equipment such as electric fan · washing machine, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 (marked “B•”) 400 500 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Ta=40° C V4 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 3.9±0.3 Ratings 0.8 8 0.26 1 0.1 6 1 –40 ~ +125 –40 ~ +125 48 Unit A A A2s W W V A °C °C mg V1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # VFGT # IFGT ! IRGT ! IRGT # IFGT # VGD R th (j-a) (dv/dt) c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # $ ! @ # $ Tj=125°C, VD=1/2VDRM Junction to case V4 Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, V DRM applied Tc=25 °C, ITM=1.2A, Instantaneous measurement Limits Min. — — — — — — — — — — 0.1 — V3 Typ. — — — — — — — — — — — — — Max. 1.0 2.0 2.0 2.0 2.0 2.0 5 5 5 10 — 65 — Unit mA V V V V V mA mA mA mA V °C/ W V/µ s V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. Mounted on 25mm × 25mm × t0.7mm ceramic plate with solder. Voltage class VDRM (V) (dv/dt) c Min. Unit Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj =125° C 8 400 2 V/µ s 2. Rate of decay of on-state commutating current (di/dt)c=–0.4A/ms 3. Peak off-state voltage VD =400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS SURGE ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 10 ON-STATE CURRENT (A) 101 7 5 4 3 2 Tj = 125°C 100 7 5 4 3 2 10–1 0 1 2 8 6 4 Tj = 25°C 2 0 100 3 4 5 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) GATE VOLTAGE (V) 101 7 5 3 2 100 7 5 3 2 PGM = 1W PG(AV) = 0.1W VGT IGM = 1A IFGT I, IRGT I, IRGT III GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 102 7 5 3 2 VGM = 10V 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE IFGT III IFGT I IRGT III IRGT I IFGT III VGD = 0.2V 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25°C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (°C/W) 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TO AMBIENT 100 (%) VFGT I VFGT III JUNCTION TO CASE VRGT I VRGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE NATURAL CONVECTION RESISTIVE, 120 INDUCTIVE 100 LOADS 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A) 160 ON-STATE POWER DISSIPATION (W) 2.0 1.6 1.2 0.8 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS 0.4 0 0 0.4 0.8 1.2 1.6 2.0 RMS ON-STATE CURRENT (A) CASE TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 HOLDING CURRENT VS. JUNCTION TEMPERATURE REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION HOLDING CURRENT (mA) TYPICAL EXAMPLE LACHING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) + T2 , G+   TYPICAL – T2 , G–  EXAMPLE – T2 , G+   10–1 0 40 –40 80 120 160 JUNCTION TEMPERATURE (°C) 100 (%) 160 140 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) III QUADRANT I QUADRANT CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25°C) ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION + – LACHING CURRENT (mA) T2 , G TYPICAL EXAMPLE COMMUTATION CHARACTERISTICS 102 VOLTAGE WAVEFORM 7 TYPICAL t 5 EXAMPLE VD 3 (dv/dt)C Tj = 125°C 2 CURRENT WAVEFORM IT = 1A (di/dt)C τ = 500µs 101 IT τ 7 VD = 200V t 5 f = 3Hz 3 2 III QUADRANT 100 7 MINIMUM 5 CHARACI QUADRANT 3 2 TERISTICS VALUE 10–1 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 100 (%) TYPICAL EXAMPLE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 6V V A RG 6V V A RG 102 7 IRGT I IRGT III IFGT I 5 IFGT III 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6Ω 6V V A RG 6V V A RG GATE CURRENT PULSE WIDTH (µs) TEST PROCEDURE 3 TEST PROCEDURE 4 Feb.1999