CM100E3U-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Chopper IGBTMOD™ U-Series Module
100 Amperes/1200 Volts
A N P - NUTS (3 PLACES) .47 [12mm] DEEP D Q(2 PLACES) H F E
C2E1
E2
C1
B
G
E2 G2
CM
M
K
K
J
R
T
U
T
#110 TAB S
C L
Description: Powerex Chopper IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor having a reverse-connected superfast recovery free-wheel diode and an anode-collector connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ High Frequency Operation (15-20kHz) □ Isolated Baseplate for Easy Heat Sinking
G2 E2 C2E1 E2 C1
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 3.70 1.89 3.15± 0.01 0.43 0.16 0.51 0.02 0.53 0.91 Millimeters 94.0 48.0 80.0± 0.25 11.0 4.0 13.0 0.5 13.5 23.0 Dimensions L M N P Q R S T U Inches 0.84 0.67 0.28 M5 0.26 Dia. 0.02 0.30 0.63 0.98 Millimeters 21.2 17.0 7.0 M5 6.5 Dia. 4.0 7.5 16.0 25.0
Applications: □ DC Motor Control □ Boost Regulator Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100E3U-24H is a 1200V (VCES), 100 Ampere Chopper IGBTMOD™ Power Module.
Type CM Current Rating Amperes 100 VCES Volts (x 50) 24
1.18 +0.04/-0.02 30.0 +1.0/-0.5
135 135
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100E3U-24H Chopper IGBTMOD™ U-Series Module 100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM100E3U-24H -40 to 150 -40 to 125 1200 ± 20 100 200* 100 200* 650 31 40 310 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V, Tj = 25°C IC = 100A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** Emitter-Collector Voltage VCC = 600V, IC = 100A, VGE = 15V IE = 100A, VGE = 0V IF = 100A, Clamp Diode Part Min. – – 4.5 – – – – – Typ. – – 6 2.9 2.85 375 – – Max. 1 0.5 7.5 3.7 – – 3.2 3.2 Units mA µA Volts Volts Volts nC Volts Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr trr Qrr VCC = 600V, IC = 100A, VGE1 = VGE2 = 15V, RG = 3.1 , Resistive Load Switching Operation IE = 100A, diE/dt = -200A/µs IE = 100A, diE/dt = -200A/µs IF = 100A, Clamp Diode Part diF/dt = -200A/µs VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – – – Typ. – – – – – – – – 0.55 – 0.55 Max. 15 5 3 100 200 300 350 300 – 300 – Units nf nf nf ns ns ns ns ns µC ns µC
Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Diode Reverse Recovery Time Diode Reverse Recovery Charge
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
136 136
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100E3U-24H Chopper IGBTMOD™ U-Series Module 100 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Clamp Diode Part Per Module, Thermal Grease Applied Min. – – – – Typ. – – – 0.035 Max. 0.19 0.35 0.35 – Units °C/W °C/W °C/W °C/W
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
200
COLLECTOR CURRENT, IC, (AMPERES)
VGE = 20V
160
11
160
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
200
15
COLLECTOR CURRENT, IC, (AMPERES)
5
VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C
12
4 3 2 1
120
10
120
80 40
80 40 0
9 8
0 0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0 0 4 8 12 16 20 0 40 80 120 160 200
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
103
Tj = 25°C
EMITTER CURRENT, IE, (AMPERES)
Tj = 25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
102
VGE = 0V f = 1MHz
8 6 4 2
IC = 200A
101
Cies
IC = 100A
102
Coes
100
Cres
IC = 40A
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
101 1.0
1.5
2.0
2.5
3.0
3.5
10-1 10-1
100
101
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
137 137
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100E3U-24H Chopper IGBTMOD™ U-Series Module 100 Amperes/1200 Volts
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -200A/µsec Tj = 25°C
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
103
VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 125°C
td(off) tf
REVERSE RECOVERY TIME, trr, (ns)
103
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 100A
16 12 8 4
SWITCHING TIME, (ns)
VCC = 400V VCC = 600V
102
td(on)
trr
102
Irr
101
101
tr
100 100
101
COLLECTOR CURRENT, IC, (AMPERES)
102
101 101
102
EMITTER CURRENT, IE, (AMPERES)
100 103
0 0 100 200 300 400 500
GATE CHARGE, QG, (nC)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
10-3 101
10-2
10-1
100
101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-3 101
10-2
10-1
100
101
100
Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.19°C/W
100
Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.35°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
138 138