CM100TF-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Six-IGBT IGBTMOD™ H-Series Module
100 Amperes/600 Volts
X Z - M4 THD (7 TYP.)
B uP E uP
A C QX
S QX N
B vP E vP
B wP E wP
P B uN E uN P B vN E vN B wN E wN
P G B E
D
G
U V W
N
R K J
N
U
T N
W
AA L
M
M
AA L
Y DIA. (4 TYP.)
.110 TAB V F H AB
P BuP P EuP BvP EvP BwP EwP
Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (70ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM100TF-12H is a 600V (VCES), 100 Ampere Six-IGBT IGBTMOD™ Power Module.
Type CM Current Rating Amperes 100 VCES Volts (x 50) 12
BuN EuN u N
BvN EvN v
BwN EwN w
N
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.02± 0.02 3.58± 0.02 3.15± 0.01 2.913± 0.01 1.69 Millimeters 102± 0.5 91.0± 0.5 80.0± 0.25 74.0± 0.25 43.0 Dimensions P Q R S T U V W X Y Z AA AB Inches 0.65 0.55 0.47 0.43 0.39 0.33 0.32 0.24 Rad. 0.24 0.22 Dia. M4 Metric 0.08 0.28 Millimeters 16.5 14.0 12.0 11.0 10.0 8.5 8.1 Rad. 6.0 6.0 Dia. 5.5 M4 2.0 7.0
1.18+0.06/-0.02 30.0+1.5/-0.5 1.18 1.16 1.06 0.96 0.87 0.79 0.67 30.0 29.5 27.0 24.5 22.0 20.0 17.0
315
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TF-12H Six-IGBT IGBTMOD™ H-Series Module 100 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M4 Terminal Screws Max. Mounting Torque M5 Mounting Screws Module Weight (Typical) V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd – – – VRMS
CM100TF-12H –40 to 150 –40 to 125 600 ± 20 100 200* 100 200* 400 13 17 540 2500
Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V IC = 100A, VGE = 15V, Tj = 150°C Total Gate Charge Diode Forward Voltage VCC = 300V, IC = 100A, VGS = 15V IE = 100A, VGS = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.1 2.15 300 – Max. 1.0 0.5 7.5 2.8** – – 2.8 Units mA
µA
Volts Volts Volts nC Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 100A, diE/dt = –200A/µs IE = 100A, diE/dt = –200A/µs VCC = 300V, IC = 100A, VGE1 = VGE2 = 15V, RG = 6.3Ω VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.27 Max. 10 3.5 2 120 300 200 300 110 – Units nF nF nF ns ns ns ns ns
Diode Reverse Recovery Time Diode Reverse Recovery Charge
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.31 0.70 0.033 Units °C/W °C/W °C/W
316
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TF-12H Six-IGBT IGBTMOD™ H-Series Module 100 Amperes/600 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
200
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES)
200
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
5
VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C
VGE = 20V 15
12
150
11
4
150
3
100
10
100
2
50
7
9 8
50
1
0 0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
0 0 50 100 150 200
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
103
Tj = 25°C Tj = 25°C IC = 200A
EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF)
102
8
101
Cies
6
IC = 100A
102
4
Coes
100
VGE = 0V f = 1MHz
2
IC = 40A
Cres
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
101 0 0.8 1.6 2.4 3.2 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
10-1 10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
103
REVERSE RECOVERY TIME, t rr, (ns)
102
tf Irr t rr
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
16
SWITCHING TIME, (ns)
VCC = 200V
td(off)
12
102
td(on) VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 125°C
101
101
VCC = 300V
8
tr
di/dt = -200A/µsec Tj = 25oC
4
101 101
COLLECTOR CURRENT, IC, (AMPERES)
102
100 101
EMITTER CURRENT, IE, (AMPERES)
100 102
0 0 100 200 300 400 500
GATE CHARGE, QG, (nC)
317
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TF-12H Six-IGBT IGBTMOD™ H-Series Module 100 Amperes/600 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100
101
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100
101
100
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.31°C/W
100
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.7°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
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