CM100TF-28H

CM100TF-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMOD™ H-Series Module 100 Amperes/1400 Volts B D X QX QX Z - M5 THD (7 TYP.) S N Bu P E u P Bv P Ev P BwP EwP P R L C N P P Bu N Eu N Bv N Ev N BwN EwN J TYP U N V W A K T G F U W AA M M E AA Y - DIA. (4 TYP.) .110 TAB H J V P BuP EuP u BvP EvP v BwP EwP w P Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking BuN EuN N BvN EvN BwN EwN N Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.21 4.02 3.54± 0.01 3.15± 0.01 1.57 1.38 1.28 1.26 Max. 1.18 0.98 0.96 0.79 0.67 Millimeters 107.0 102.0 90.0± 0.25 80.0± 0.25 40.0 35.0 32.5 32.0 Max 30.0 25.0 24.5 20.0 17.0 Dimensions P Q R S T U V W X Y Z AA Inches 0.57 0.55 0.47 0.43 0.39 0.33 0.30 0.24 Rad. 0.24 0.22 M5 Metric 0.08 Millimeters 14.5 14.0 12.0 11.0 10.0 8.5 7.5 Rad. 6.0 6.0 5.5 M5 2.0 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM100TF-28H is a 1400V (VCES), 100 Ampere Six-IGBT IGBTMOD™ Power Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 28 355 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TF-28H Six-IGBT IGBTMOD™ H-Series Module 100 Amperes/1400 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Characteristics Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E-SHORT) Gate-Emitter Voltage (C-E-SHORT) Collector Current Peak Collector Current Diode Forward Current Diode Forward Pulse Current Power Dissipation Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M5 Mounting Screws Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Symbol Tj Tstg VCES VGES IC ICM IEC IECM Pd – – – VRMS CM100TF-28H –40 to 150 –40 to 125 1400 ± 20 100 200* 100 200* 780 17 17 830 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V IC = 100A, VGE = 15V, Tj = 150°C Total Gate Charge Diode Forward Voltage VCC = 800V, IC = 100A, VGS = 15V IE = 100A, VGS = 0V Min. – – 5.0 – – – – Typ. – – 6.5 3.1 2.95 510 – Max. 1.0 0.5 8.0 4.2** – – 3.8 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 100A, diE/dt = –200A/µs IE = 100A, diE/dt = –200A/µs VCC = 800V, IC = 100A, VGE1 = VGE2 = 15V, RG = 3.1Ω VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 1.0 Max. 20 7 4 250 400 300 500 300 – Units nF nF nF ns ns ns ns ns µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.16 0.35 0.025 Units °C/W °C/W °C/W 356 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TF-28H Six-IGBT IGBTMOD™ H-Series Module 100 Amperes/1400 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 200 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C Tj = 25oC 15 13 12 160 VGE = 20V 11 160 4 120 120 3 80 10 80 2 40 7 9 8 40 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 40 80 120 160 200 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25°C Tj = 25°C IC = 200A EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 102 8 102 101 Cies 6 IC = 100A 4 Coes 101 100 Cres 2 IC = 40A VGE = 0V f = 1MHz 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 104 REVERSE RECOVERY TIME, t rr, (ns) 103 VCC = 800V VGE = ±15V RG = 3.1 Ω Tj = 125°C 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 100A 16 SWITCHING TIME, (ns) VCC = 600V VCC = 800V 103 td(off) t rr 12 tf td(on) 102 Irr 101 102 8 tr di/dt = -200A/µsec Tj = 25°C 4 101 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 0 0 200 400 600 800 GATE CHARGE, QG, (nC) 357 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TF-28H Six-IGBT IGBTMOD™ H-Series Module 100 Amperes/1400 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.16°C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.35°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 358