CM100TJ-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design Six IGBTMOD™
100 Amperes/1200 Volts
A D E F
19 18
NOT CONNECTED
U G
NOT CONNECTED
H
17 16 15
20
14
B
J
Tc S
21
N
M
13
K Tc L
L
T
1
2
34
56
78
9
10
11 12
P Q Y X
R
V C
W
21 1 2 5 6 9 10
13
Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100TJ-24F is a 1200V (VCES), 100 Ampere SixIGBT IGBTMOD™ Power Module.
Type CM Current Rating Amperes 100 VCES Volts (x 50) 24
3 4 20 19
7 8
11 12 14 17 15
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 4.78 2.42 0.67 4.33± 0.01 3.00 0.75 0.60 0.15 2.26 1.97± 0.01 1.07 Millimeters 121.5 61.5 17.0 110.0± 0.25 76.2 19.05 15.24 3.81 57.5 50.0± 0.25 27.0 Dimensions M N P Q R S T U V W X Y Inches 0.15 0.75 0.15 3.00 0.60 0.45 0.04 0.22 Dia. 0.12 0.81 3.72 4.62 Millimeters 3.81 19.05 3.81 76.2 15.24 1.15 1.0 5.5 Dia. 3.0 20.5 94.5 118.11
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TJ-24F Trench Gate Design Six IGBTMOD™ 100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current (Tc = 25°C)** Peak Emitter Current** Maximum Collector Dissipation (Tj < 150°C) (Tc = 25°C) Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – Viso CM100TJ-24F -40 to 150 -40 to 125 1200 ±20 100 200* 100 200* 390 31 300 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb Grams Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V, Tj = 25°C IC = 100A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** VCC = 600V, IC = 100A, VGE = 15V IE = 100A, VGE = 0V Min. – – 5 – – – – Typ. – – 6 1.8 1.9 1100 – Max. 1 20 7 2.4 – – 3.3 Units mA µA Volts Volts Volts nC Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TJ-24F Trench Gate Design Six IGBTMOD™ 100 Amperes/1200 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 100A, VGE1 = VGE2 = 15V, RG = 3.1 , Inductive Load Switching Operation VCE = 10V, VGE = 0V, f = 1MHz Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 4.1 Max. 39 1.7 1.6 100 50 400 300 150 – Units nf nf nf ns ns ns ns ns µC
Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(j-c)'D Test Conditions Per IGBT 1/6 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi 1/6 Module, Tc Reference Point per Outline drawing Thermal Resistance, Junction to Case Per IGBT 1/6 Module, Tc Reference Point Under Chip Thermal Resistance, Junction to Case Per FWDi 1/6 Module, Tc Reference Tc Reference Point Under Chip Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.13 – °C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min. –
Typ. –
Max. 0.32
Units °C/W °C/W °C/W °C/W
–
–
0.36
–
0.18
–
–
0.20
–
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TJ-24F Trench Gate Design Six IGBTMOD™ 100 Amperes/1200 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
200
COLLECTOR CURRENT, IC, (AMPERES)
160
VGE = 20V
9.5 9
2.5 2.0 1.5 1.0 0.5 0
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
15 11 10
3.0
VGE = 15V Tj = 25°C Tj = 125°C
5
Tj = 25°C
4 3
IC = 200A
120 80
8.5
2 1
IC = 100A IC = 40A
40 0 0 1 2
8
0 0 40 80 120 160 200 0 4 8 12 16 20
COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS)
3
4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
103
Tj = 25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
102
VGE = 0V Cies
103
tf td(off)
SWITCHING TIME, (ns)
102
101
102
td(on) tr
101
100
Coes Cres
101
VCC = 600V VGE = ±15V RG = 3.1 Ω Tj = 125°C Inductive Load
100 0 1.0 2.0 3.0 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
10-1 10-1
100
101
102
100 101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi)
103
REVERSE RECOVERY TIME, trr, (ns)
102
VCC = 600V VGE = ±15V RG = 3.1 Ω Tj = 25°C Inductive Load
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
101
10-3
10-2
10-1
100
101
IC = 100A
16 12 8 4
VCC = 600V
100
Rth(j-c) = 0.32°C/W (IGBT) Under Chip = 0.18°C/W Rth(j-c) = 0.36°C/W (FWDi)
102
Irr trr
101
VCC = 400V
10-1
10-1
10-2
101 100
101
EMITTER CURRENT, IE, (AMPERES)
100 102
Per Unit Base Single Pulse TC = 25°C
10-2
0 0
10-3 10-5
TIME, (s)
500
1000
1500
10-4
10-3 10-3
GATE CHARGE, QG, (nC)
4