CM100TU-24F

CM100TU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD™ 100 Amperes/1200 Volts J S - NUTS (5 TYP) CM N P K K R T (4 TYP.) P GUP EUP GVP EVP GWP EWP L BE N L N L M Q TC MEASURING POINT TC MEASURING POINT GUN EUN GVN EVN GWN EWN U V W J L N D A W - THICK x X - WIDE TAB (12 PLACES) J L N V W - THICK x X - WIDE TAB (12 PLACES) H L C F G P GUP RTC EUP U GUN RTC EUN N EVN GVN RTC EWN EVP V GWN RTC GVP RTC EWP W A GWP RTC Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100TU-24F is a 1200V (VCES), 100 Ampere SixIGBT IGBTMOD™ Power Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 24 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 4.21 4.02 3.54± 0.01 3.15± 0.01 0.16 1.02 0.31 0.91 0.47 0.43 Millimeters 107.0 102.0 90.0± 0.25 80.0± 0.25 4.0 26.0 8.1 23.0 12.0 11.0 Dimensions M N P Q R S T V W X Inches 0.57 0.85 0.67 1.91 0.15 M5 0.22 Dia. 0.03 0.02 0.110 Millimeters 14.4 21.7 17.0 48.5 3.75 M5 5.5 Dia. 0.8 0.5 2.79 1.14 +0.04/-0.02 29.0 +1.0/-0.5 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TU-24F Trench Gate Design Six IGBTMOD™ 100 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** Peak Emitter Current** Maximum Collector Dissipation (Tj < 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM100TU-24F -40 to 150 -40 to 125 1200 ±20 100 200* 100 200* 500 31 31 680 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES I GES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V, Tj = 25°C IC = 100A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** VCC = 600V, IC = 100A, VGE = 15V IE = 100A, VGE = 0V Min. – – 5 – – – – Typ. – – 6 1.8 1.9 1100 – Max. 1 20 7 2.4 – – 3.2 Units mA µA Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TU-24F Trench Gate Design Six IGBTMOD™ 100 Amperes/1200 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 100A, VGE1 = VGE2 = 15V, RG = 3.1 , Inductive Load Switching Operation IE = 100A VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 4.1 Max. 39 1.7 1 100 50 400 300 150 – Units nf nf nf ns ns ns ns ns µC Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(c-f) Test Conditions Per IGBT 1/6 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi 1/6 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per IGBT 1/6 Module, Tc Reference Point Under Chip Contact Thermal Resistance Per Module, Thermal Grease Applied – 0.015 – °C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Min. – Typ. Max. 0.25 Units °C/W °C/W °C/W – – 0.35 – 0.15 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TU-24F Trench Gate Design Six IGBTMOD™ 100 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT, IC, (AMPERES) 160 120 VGE = 20V 9 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) T j = 2 5 oC 11 15 10 9.5 3 VGE = 15V Tj = 25°C Tj = 125°C 5 Tj = 25°C 4 3 IC = 200A 2 80 40 8.5 2 1 IC = 100A IC = 40A 1 8 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 40 80 120 160 200 COLLECTOR-CURRENT, IC, (AMPERES) 0 0 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 102 Cies 103 102 101 SWITCHING TIME, (ns) 102 td(off) VCC = 600V tf VGE = ±15V RG = 3.1 Ω Tj = 125°C Inductive Load td(on) 101 100 Coes VGE = 0V Cres 101 tr 100 0 1.0 2.0 3.0 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 100 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 102 REVERSE RECOVERY TIME, trr, (ns) 102 VCC = 600V VGE = ±15V RG = 3.1 Ω Tj = 2 5 ° C Inductive Load 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 10-3 10-2 10-1 100 101 IC = 100A 16 VCC = 400V 100 Per Unit Base Rth(j-c) = 0.25°C/W (IGBT) Rth(j-c) = 0.35°C/W (FWDi) Single Pulse TC = 25°C 12 8 4 VCC = 600V 101 Irr trr 101 10-1 10-1 10-2 10-2 100 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 0 0 400 800 1200 1600 GATE CHARGE, QG, (nC) 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4