CM1200HA-24J
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Single IGBTMOD™ H-Series Module
1200 Amperes/1200 Volts
A B U - M4 THD (2 TYP.)
R
K P
E
M
G
B S - M8 THD (2 TYP.)
A
C
E
C
J
G
Q T - DIA. (4 TYP.) H
L F N
E
D
Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1200HA-24J is a 1200V (VCES), 1200 Ampere Single IGBTMOD™ Power Module.
Type CM Current Rating Amperes 1200 VCES Volts (x 50) 24
E
C
G E
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 5.12 4.33± 0.01 1.840 Millimeters 130.0 110.0± 0.25 46.75 Dimensions L M N P Q R S T U Inches 0.79 0.77 0.75 0.61 0.51 0.35 M8 Metric 0.26 Dia. M4 Metric Millimeters 20.0 19.5 19.0 15.6 13.0 9.0 M8 Dia. 6.5 M4
1.73± 0.04/0.02 44.0± 1.0/0.5 1.46± 0.04/0.02 37.0± 1.0/0.5 1.42 1.25 1.18 1.10 1.08 36.0 31.8 30.0 28.0 27.5
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1200HA-24J Single IGBTMOD™ H-Series Module 1200 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Peak Emitter Current** (Tj ≤ 150°C) Maximum Collector Dissipation (Tc = 25°C) (Tj < 150°C) Max. Mounting Torque M8 Terminal Screws Max. Mounting Torque M6 Mounting Screws Mounting Torque G(E) Terminal M4 Module Weight (Typical) Isolation Voltage, Main Terminal to Base Plate, AC 1 Min. Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – – Viso CM1200HA-24J –40 to +150 –40 to +125 1200 ± 20 1200 2400* 1200 2400* 5800 95 40 15 1600 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VCES, VCE = 0V IC = 120mA, VCE = 10V IC = 1200A, VGE = 15V, Tj = 25°C IC = 1200A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter Current Voltage** VCC = 600V, IC = 1200A, VGE = 15V IE = 1200A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.4 2.5 5000 – Max. 6 0.5 7.5 3.1 – – 3.7 Units mA µA Volts Volts Volts nC Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 1200A, VGE1 = VGE2 = 15V, RG = 3.3Ω, Resistive Load Switching Operation IE = 1200A, diE/dt = –2400A/µs IE = 1200A, diE/dt = –2400A/µs VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 9.0 Max. 200 70 40 600 1800 1200 1500 300 – Units nF nF nF ns ns ns ns ns µC
Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case** Thermal Resistance, Junction to Case** Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.022 0.050 0.018 Units °C/W °C/W °C/W
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1200HA-24J Single IGBTMOD™ H-Series Module 1200 Amperes/1200 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
2400
VGE = 20V
15 12
2400 2000 11
IC, (AMPERES)
5
VCE = 10V Tj = 25°C Tj = 125°C
VCE(sat), (VOLTS)
2000 1600 1200
Tj = 25°C
4
VGE = 15V Tj = 25°C Tj = 125°C
IC, (AMPERES)
1600 1200 800
3
10 800 9 400 8 0 0 2 4 6 8 10
VCE, (VOLTS)
2
400 0 0 4 8 12 16 20
VGE, (VOLTS)
1
0 0 500 1000 1500 2000 2500
IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
104
Tj = 25°C Tj = 25°C IC = 2400A
Cies, Coes, Cres, (nF)
103
8
102
Cies
6
IC = 1200A
IE, (AMPERES)
103
Coes
4
101
Cres
2
IC = 480A VGE = 0V
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
102 1.0
1.5
2.0
2.5
3.0
3.5
100 10-1
100
VCE, (VOLTS)
101
102
VEC, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
GATE CHARGE, VGE (TYPICAL)
104
103
103
20
IC = 1200A
16
SWITCHING TIME, (ns)
103
td(off)
Irr, (AMPERES)
VCC = 400V VCC = 600V
tf
t rr, (ns)
VGE, (VOLTS)
t rr
12
td(on)
102
Irr
102
8
102
tr
VCC = 600V VGE = ±15V RG = 3.3 Ω Tj = 125°C
di/dt = -2400A/µsec Tj = 25°C
4 101 104
101 101
102
103
104
101 101
0 0 2000 4000
QG, (nC)
102
103
6000
8000
COLLECTOR CURRENT, IC, (AMPERES)
IE, (AMPERES)
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1200HA-24J Single IGBTMOD™ H-Series Module 1200 Amperes/1200 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100
101
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100
101
100
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.022°C/W
100
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.05°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
4