CM150DU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design Dual IGBTMOD™
150 Amperes/1200 Volts
TC MEASURING POINT A D T (4 TYP.) F
G2
BE CM
E2
H U J H
C2E1
E2
C1
E1 G1
V
Q S - NUTS (3 TYP) K K
Q
P
N
G
K
R M
C
L
G2 E2 RTC C2E1 E2 RTC E1 G1
Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150DU-24F is a 1200V (VCES), 150 Ampere Dual IGBTMOD™ Power Module.
Type CM Current Rating Amperes 150 VCES Volts (x 50) 24
C1
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 4.25 2.44 3.66± 0.01 1.88± 0.01 0.67 0.16 0.24 0.59 0.55 Millimeters 108.0 62.0 93.0± 0.25 48.0± 0.25 17.0 4.0 6.0 15.0 14.0 Dimensions L M N P Q R S T U V Inches 0.87 0.33 0.10 0.85 0.98 0.11 M6 0.26Dia. 0.02 0.62 Millimeters 22.0 8.5 2.5 21.5 25.0 2.8 M6 6.5 Dia. 0.5 15.85
1.14 +0.04/-0.02 29.0 +1.0/-0.5
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-24F Trench Gate Design Dual IGBTMOD™ 150 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM150DU-24F -40 to 150 -40 to 125 1200 ± 20 150 300* 150 300* 600 40 40 400 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 15mA, VCE = 10V IC = 150A, VGE = 15V, Tj = 25°C IC = 150A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** VCC = 600V, IC = 150A, VGE = 15V IE = 150A, VGE = 0V Min. Typ. – – 5 – – – – Max. – – 6 1.8 1.9 1650 – Units 1 20 7 2.4 – – 3.2 mA µA Volts Volts Volts nC Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-24F Trench Gate Design Dual IGBTMOD™ 150 Amperes/1200 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 150A, VGE1 = VGE2 = 15V, RG = 2.1 , Inductive Load Switching Operation IE = 150A VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 6.0 Max. 59 2.6 1.5 150 80 450 300 150 – Units nf nf nf ns ns ns ns ns µC
Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(c-f) Test Conditions Per IGBT 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per IGBT 1/2 Module, Tc Reference Point Under Chip Contact Thermal Resistance Per Module, Thermal Grease Applied – 0.020 – °C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min. –
Typ.
Max. 0.21
Units °C/W °C/W °C/W
–
–
0.24
–
0.11
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-24F Trench Gate Design Dual IGBTMOD™ 150 Amperes/1200 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
300
COLLECTOR CURRENT, IC, (AMPERES)
250 200 150
VGE = 20V 9
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
11 15
10 9.5
3
VGE = 15V Tj = 25°C Tj = 125°C
5
Tj = 25°C
4 3
IC = 300A
2
8.5
2 1
IC = 150A IC = 60A
100 50 0 0 1 2 3 4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
1
8
0 0 50 100 150 200 250 300
COLLECTOR-CURRENT, IC, (AMPERES)
0 0 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
103
Tj = 25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
102
Cies
103
tf td(off)
101
SWITCHING TIME, (ns)
102
td(on)
102
tr
100
Coes Cres VGE = 0V
101
VCC = 600V VGE = ±15V RG = 2.1 Ω Tj = 125°C Inductive Load
101 0 1.0 2.0 3.0 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
10-1 10-1
100
101
102
100 101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi)
103
REVERSE RECOVERY TIME, trr, (ns)
103
VCC = 600V VGE = ±15V RG = 2.1 Ω Tj = 25°C Inductive Load Irr
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
101
10-3
10-2
10-1
100
101
IC = 150A
16
VCC = 400V
100
Per Unit Base Rth(j-c) = 0.21°C/W (IGBT) Rth(j-c) = 0.24°C/W (FWDi) Single Pulse TC = 25°C
12 8 4
VCC = 600V
102
trr
102
10-1
10-1
10-2
10-2
101 101
102
EMITTER CURRENT, IE, (AMPERES)
101 103
0 0 500 1000 1500 2000 2500
GATE CHARGE, QG, (nC)
10-3 10-5
TIME, (s)
10-4
10-3 10-3
4