CM150E3U-24H

CM150E3U-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Chopper IGBTMOD™ U-Series Module 150 Amperes/1200 Volts A D T - (4 TYP.) F BE CM C L G2 E2 U H C2E1 E2 C1 S - NUTS (3 TYP) Q Q P N G K K K R FM C L Description: Powerex Chopper IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor having a reverse-connected superfast recovery free-wheel diode and an anode-collector connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ High Frequency Operation (15-20kHz) □ Isolated Baseplate for Easy Heat Sinking G2 E2 C2E1 E2 C1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 4.25 2.44 3.66± 0.01 1.88± 0.01 0.30 0.16 0.24 0.11 0.71 Millimeters 108.0 62.0 93.0± 0.25 48.0± 0.25 7.5 4.0 6.0 2.8 18.0 Dimensions L M N P Q R S T U Inches 0.87 0.33 0.10 0.85 0.98 0.16 M6 0.26 Dia. 0.02 Millimeters 22.0 8.5 2.5 21.5 25.0 4.0 M6 6.5 Dia. 0.5 Applications: □ DC Motor Control □ Boost Regulator Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150E3U-24H is a 1200V (VCES), 150 Ampere Chopper IGBTMOD™ Power Module. Type CM Current Rating Amperes 150 VCES Volts (x 50) 24 1.14 +0.04/-0.02 29.0 +1.0/-0.5 139 139 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 CM150E3U-24H Chopper IGBTMOD™ U-Series Module 150 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM150E3U-24H -40 to 150 -40 to 125 1200 ±20 150 300* 150 300* 890 40 40 400 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 15mA, VCE = 10V IC = 150A, VGE = 15V, Tj = 25°C IC = 150A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** Emitter-Collector Voltage VCC = 600V, IC = 150A, VGE = 15V IE = 150A, VGE = 0V IF = 150A, Clamp Diode Part Min. – – 4.5 – – – – – Typ. – – 6 2.9 2.85 560 – – Max. 1 0.5 7.5 3.7 – – 3.2 3.2 Units mA µA Volts Volts Volts nC Volts Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr trr Qrr VCC = 600V, IC = 150A, VGE1 = VGE2 = 15V, RG = 2.1 , Resistive Load Switching Operation IE = 150A, diE/dt = -300A/µs IE = 150A, diE/dt = -300A/µs IF = 150A, Clamp Diode Part diF/dt = -300A/µs VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – – – Typ. – – – – – – – – 0.82 – 0.82 Max. 22 7.4 4.4 200 250 300 350 300 – 300 – Units nf nf nf ns ns ns ns ns µC ns µC Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Diode Reverse Recovery Time Diode Reverse Recovery Charge **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 140 140 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 CM150E3U-24H Chopper IGBTMOD™ U-Series Module 150 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Clamp Diode Part Per Module, Thermal Grease Applied Min. – – – – Typ. – – – 0.020 Max. 0.14 0.24 0.24 – Units °C/W °C/W °C/W °C/W OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 300 COLLECTOR CURRENT, IC, (AMPERES) 250 200 150 100 VGE = 20V 12 11 250 200 150 100 50 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 300 15 COLLECTOR CURRENT, IC, (AMPERES) 5 VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 10 9 50 8 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 0 50 100 150 200 250 300 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25°C EMITTER CURRENT, IE, (AMPERES) Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) 102 VGE = 0V f = 1MHz Cies 8 IC = 300A 101 6 4 2 IC = 150A 102 Coes 100 IC = 60A Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 1.0 1.5 2.0 2.5 3.0 3.5 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 141 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150E3U-24H Chopper IGBTMOD™ U-Series Module 150 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -300A/µsec Tj = 25°C REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 tf REVERSE RECOVERY TIME, trr, (ns) 103 td(off) 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 150A VCC = 400V SWITCHING TIME, (ns) 15 VCC = 600V 102 td(on) tr 102 trr 102 10 101 VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C 5 Irr 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 103 0 0 200 400 600 800 GATE CHARGE, QG, (nC) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.14°C/W 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.24°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 142 142