CM200E3U-12H

CM200E3U-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Chopper IGBTMOD™ U-Series Module 200 Amperes/600 Volts A N P - NUTS (3 PLACES) .47 [12mm] DEEP D Q(2 PLACES) H F E C2E1 E2 C1 B G E2 G2 CM M K K J R T U T #110 TAB S C L Description: Powerex Chopper IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor having a reverse-connected superfast recovery free-wheel diode and an anode-collector connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ High Frequency Operation (15-20kHz) □ Isolated Baseplate for Easy Heat Sinking G2 E2 C2E1 E2 C1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 3.70 1.89 3.15± 0.01 0.43 0.16 0.51 0.02 0.53 0.91 Millimeters 94.0 48.0 80.0± 0.25 11.0 4.0 13.0 0.5 13.5 23.0 Dimensions L M N P Q R S T U Inches 0.84 0.67 0.28 M5 0.26 Dia. 0.02 0.30 0.63 0.98 Millimeters 21.2 17.0 7.0 M5 6.5 Dia. 4.0 7.5 16.0 25.0 Applications: □ DC Motor Control □ Boost Regulator Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200E3U-12H is a 600V (VCES), 200 Ampere Chopper IGBTMOD™ Power Module. Type CM Current Rating Amperes 200 VCES Volts (x 50) 12 1.18 +0.04/-0.02 30.0 +1.0/-0.5 119 119 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200E3U-12H Chopper IGBTMOD™ U-Series Module 200 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM200E3U-12H -40 to 150 -40 to 125 600 ±20 200 400* 200 400* 650 31 40 310 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 20mA, VCE = 10V IC = 200A, VGE = 15V, Tj = 25°C IC = 200A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** Emitter-Collector Voltage VCC = 300V, IC = 200A, VGE = 15V IE = 200A, VGE = 0V IF = 200A, Clamp Diode Part Min. – – 4.5 – – – – – Typ. – – 6 2.4 2.6 400 – – Max. 1 0.5 7.5 3.0 – – 2.6 2.6 Units mA µA Volts Volts Volts nC Volts Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr trr Qrr VCC = 300V, IC = 200A, VGE1 = VGE2 = 15V, RG = 3.1 , Resistive Load Switching Operation IE = 200A, diE/dt = -400A/µs IE = 200A, diE/dt = -400A/µs IF = 200A, Clamp Diode Part diF/dt = -400A/µs VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – – – Typ. – – – – – – – – 0.48 – 0.48 Max. 17.6 9.6 2.6 150 400 300 300 160 – 160 – Units nf nf nf ns ns ns ns ns µC ns µC Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Diode Reverse Recovery Time Diode Reverse Recovery Charge **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 120 120 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200E3U-12H Chopper IGBTMOD™ U-Series Module 200 Amperes/600 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Clamp Diode Part Per Module, Thermal Grease Applied Min. – – – – Typ. – – – 0.035 Max. 0.19 0.35 0.35 – Units °C/W °C/W °C/W °C/W OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 500 COLLECTOR CURRENT, IC, (AMPERES) 400 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC VGE = 20V 14 13 COLLECTOR CURRENT, IC, (AMPERES) 5 VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C 400 300 4 3 2 1 300 12 11 10 200 200 100 100 9 8 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 100 200 300 400 500 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 102 Tj = 25°C EMITTER CURRENT, IE, (AMPERES) Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) 102 VGE = 0V f = 1MHz 8 6 4 2 IC = 400A 101 Cies IC = 200A 101 Coes 100 Cres IC = 80A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 121 121 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200E3U-12H Chopper IGBTMOD™ U-Series Module 200 Amperes/600 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -400A/µsec Tj = 25°C REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 tf SWITCHING TIME, (ns) REVERSE RECOVERY TIME, trr, (ns) 104 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 200A 15 VCC = 200V VCC = 300V td(off) 103 Irr 101 102 td(on) tr VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C 10 102 trr 100 5 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 10-1 103 0 0 100 200 300 400 500 600 GATE CHARGE, QG, (nC) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.19°C/W 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.35°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 122 122