CM200TU-12H

CM200TU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMOD™ U-Series Module 200 Amperes/600 Volts A B F E G H E H G E S K R 4 - Mounting Holes L GuP EuP GvP EvP D C GwP EwP GuN EuN GvN EvN TC Measured Point u v TC Measured M Point GwN EwN w N 5 - M5 NUTS E H J E J H E K 0.110 - 0.5 Tab P Q Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200TU-12H is a 600V (VCES), 200 Ampere SixIGBT IGBTMOD™ Power Module. Type CM Current Rating Amperes 200 VCES Volts (x 50) 12 P GuP EuP U GvP EvP V GwP EwP W GuN EuN N GvN EvN GwN EwN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.21 3.54± 0.01 4.02 3.15± 0.01 0.43 0.91 0.47 0.85 0.91 Millimeters 107.0 90.0± 0.25 102.0 80.0± 0.25 11.0 23.0 12.0 21.7 23.0 Dimensions K L M N P Q R S Inches 0.15 0.67 1.91 0.03 0.32 1.02 0.22 Dia. 0.57 Millimeters 3.75 17.0 48.5 0.8 8.1 26.0 5.5 Dia. 14.4 89 89 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TU-12H Six IGBTMOD™ U-Series Module 200 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** Peak Emitter Current** Maximum Collector Dissipation (Tj < 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM200TU-12H -40 to 150 -40 to 125 600 ±20 200 400* 200 400* 650 31 31 680 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 15mA, VCE = 10V IC = 200A, VGE = 15V, Tj = 25°C IC = 200A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage* VCC = 300V, IC = 200A, VGE = 15V IE = 200A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6 2.4 2.6 400 – Max. 1 0.5 7.5 3.0 – – 2.6 Units mA µA Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 200A, VGE1 = VGE2 = 15V, RG = 3.1 , Resistive Load Switching Operation IE = 200A, diE/dt = -400A/µs IE = 200A, diE/dt = -400A/µs VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.48 Max. 17.6 9.6 2.6 150 400 300 300 160 – Units nf nf nf ns ns ns ns ns µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT 1/6 Module Per Free-Wheel Diode 1/6 Module Per Module, Thermal Grease Applied Min. – – – Typ. – – 0.015 Max. 0.19 0.35 – Units °C/W °C/W °C/W 90 90 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TU-12H Six IGBTMOD™ U-Series Module 200 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 400 COLLECTOR CURRENT, IC, (AMPERES) 320 240 VGE = 20V 12 320 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC 15 14 400 13 VCE = 10V Tj = 25°C Tj = 125°C 5 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 220 11 160 10 160 80 0 80 9 8 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 0 80 160 240 320 400 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25°C EMITTER CURRENT, IE, (AMPERES) Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) 102 8 6 4 2 IC = 400A VGE = 0V f = 1MHz 102 101 Cies IC = 200A Coes 101 100 Cres IC = 80A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) Irr REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, trr, (ns) 103 tf 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 200A SWITCHING TIME, (ns) td(off) 16 12 8 4 VCC = 200V VCC = 300V 102 td(on) tr 102 trr 100 101 VCC = 300V VGE = ±15V RG = 3.1 Ω Tj = 125°C di/dt = -400A/µsec Tj = 25°C 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 10-1 103 0 0 150 300 450 600 GATE CHARGE, QG, (nC) 91 91 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TU-12H Six IGBTMOD™ U-Series Module 200 Amperes/600 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.19°C/W 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.35°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 92 92