CM350DU-5F

CM350DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 350 Amperes/250 Volts A B TC Measured Point E K 4 - Mounting Holes H D C F J CM H 3 - M6 NUTS R R G 0.110 - 0.5 Tab M P M P M N L Q Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ High Frequency Operation (15-20kHz) □ Isolated Baseplate for Easy Heat Sinking G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 4.33 3.66± 0.01 3.15 2.44± 0.01 0.55 0.86 0.94 0.24 Millimeters 110.0 93.0± 0.25 80.0 62.0± 0.25 14.0 21.75 24.0 6.0 Dimensions J K L M N P Q R Inches 0.59 0.26 Dia. 1.14 +0.04/-0.02 0.71 0.33 0.28 0.83 0.98 Millimeters 15.0 6.5 Dia. 29 +1.0/-0.5 18.0 8.5 7.0 21.0 25.0 Applications: □ DC Motor Control □ Boost Regulator Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM350DU-5F is a 250V (VCES), 350 Ampere Trench Gate Design Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 350 VCES Volts (x 50) 5 361 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM350DU-5F Trench Gate Design Dual IGBTMOD™ 350 Amperes/250 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM350DU-5F -40 to 150 -40 to 125 250 ± 20 350 700 350 700* 960 26 26 520 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES I GES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VCES, VCE = 0V IC = 35mA, VCE = 10V IC = 350A, VGE = 10V, Tj = 25°C IC = 350A, VGE = 10V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage* VCC = 100V, IC = 350A, VGE = 10V IE = 350A, VGE = 0V Min. – – 3.0 – – – – Typ. – – 4.0 1.2 1.10 1320 – Max. 1 0.5 5.0 1.7 – – 2.0 Units mA µA Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 100V, IC = 350A, VGE1 = VGE2 = 10V, RG = 7.1Ω, Resistive Load Switching Operation IE = 350A, diE/dt = -700A/ms IE = 350A, diE/dt = -700A/ms VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 5.7 Max. 99 4.5 3.4 1100 2400 900 500 300 – Units nf nf nf ns ns ns ns ns µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per Free-Wheel Diode Per Module, Thermal Grease Applied Min. – – – Typ. – – 0.010 Max. 0.13 0.19 – Units °C/W °C/W °C/W 362 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM350DU-5F Trench Gate Design Dual IGBTMOD™ 350 Amperes/250 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 700 COLLECTOR CURRENT, IC, (AMPERES) 700 6 8 COLLECTOR CURRENT, IC, (AMPERES) 2.0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 15V 10 5.75 Tj = 25oC 560 420 560 5.5 VCE = 10V Tj = 25°C Tj = 125°C 1.6 1.2 0.8 0.4 VGE = 10V Tj = 25°C Tj = 125°C 420 280 140 5.25 280 140 0 5.0 4.75 4.5 0 0 1 2 3 0 0 2 4 6 8 10 0 140 280 420 560 700 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) 4 5 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25°C 103 EMITTER CURRENT, IE, (AMPERES) Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) 102 Cies 4 3 2 1 IC = 700A 102 101 Coes IC = 350A 101 100 Cres IC = 140A VGE = 0V f = 1MHz 0 0 3 6 9 12 15 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 0.6 0.9 1.2 1.5 1.8 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -700A/µsec Tj = 25°C REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 104 REVERSE RECOVERY TIME, trr, (ns) 103 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 350A 16 12 8 4 SWITCHING TIME, (ns) 103 td(off) td(on) tf VCC = 50V trr 102 Irr 102 VCC = 100V 102 tr VCC = 100V VGE = ±10V RG = 7.1 Ω Tj = 125°C 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 103 0 0 0.7 1.4 2.1 2.8 GATE CHARGE, QG, (nC) 363 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM350DU-5F Trench Gate Design Dual IGBTMOD™ 350 Amperes/250 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.13°C/W 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.19°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 364