CM400DU-24F

CM400DU-24F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ F-Series Module 400 Amperes/1200 Volts A B F C L M TC MEASURED POINT G T - (4 TYP.) N R Z G2 E2 P C L Q E2 C1 CE AA X E1 G1 Y P W(4 PLACES) S - (3 PLACES) L K J H LABEL C2E1 V U D G2 E2 RTC C2E1 E2 RTC E1 G1 C1 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Millimeters 14.5 40.0 65.0 M8 8.0 8.0 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 5.51 5.12 5.12 1.38 +0/-0.02 4.33±0.01 4.33±0.01 0.39 0.45 0.54 1.72 1.42 0.39 0.80 Millimeters 140.0 130.0 130.0 35.0 +0/-0.5 110.0±0.25 110.0±0.25 10.0 11.5 13.8 43.8 36.0 10.0 20.4 Dimensions P Q R S T U V W X Y Z AA Inches 0.57 1.57 2.56 M8 0.32 0.32 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400DU-24F is a 1200V (VCES), 400 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 400 VCES Volts (x 50) 24 0.97 +0.04/-0.02 24.5 +1.0/-0.5 M4 0.59 0.35 1.02 0.79 M4 15.0 9.0 26.0 20.0 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-24F Dual IGBTMOD™ F-Series Module 400 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Mounting Torque, M8 Main Terminal Mounting Torque, M6 Mounting G(E) Terminal, M4 Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – – Viso CM400DU-24F -40 to 150 -40 to 125 1200 ±20 400 800* 400 800* 1100 95 40 15 1200 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VCES, VCE = 0V IC = 40mA, VCE = 10V IC = 400A, VGE = 15V, Tj = 25°C IC = 400A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** VCC = 600V, IC = 400A, VGE = 15V IE = 400A, VGE = 0V Min. – – 5.0 – – – – Typ. – – 6 1.8 1.9 4400 – Max. 2 80 7.0 2.4 – – 3.2 Units mA µA Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-24F Dual IGBTMOD™ F-Series Module 400 Amperes/1200 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 400A, VGE1 = VGE2 = 15V, RG = 3.1 , Inductive Load Switching Operation IE = 400A VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 23.6 Max. 160 6.8 4 450 200 1000 300 550 – Units nf nf nf ns ns ns ns ns µC Diode Reverse Recovery Time* Diode Reverse Recovery Charge* Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)R Rth(j-c')Q Test Conditions Per IGBT 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance Per IGBT 1/2 Module Tc Reference Point Under Chips Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied *Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). **If you use this value, Rth(f-a) should be measured just under the chips. – 0.010 – °C/W – – 0.045** °C/W – – 0.13 °C/W Min. – Typ. – Max. 0.11 Units °C/W 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-24F Dual IGBTMOD™ F-Series Module 400 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 800 COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V 2.5 2.0 1.5 1.0 0.5 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 15 11 10 9.5 9 3.0 VGE = 15V Tj = 25°C Tj = 125°C 5 Tj = 25°C 600 4 3 IC = 800A 400 8.5 2 1 IC = 400A IC = 160A 200 8 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 200 400 600 800 0 6 8 10 12 14 16 18 20 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT, IE, (AMPERES) Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) 103 VGE = 0V 104 td(off) tf td(on) 102 102 SWITCHING TIME, (ns) Cies 103 102 tr VCC = 600V VGE = ±15V RG = 3.1 Ω Tj = 125°C Inductive Load 101 Coes Cres 101 101 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 100 10-1 100 101 102 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V RG = 3.1 Ω Tj = 25°C Inductive Load REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 103 REVERSE RECOVERY TIME, trr, (ns) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 10-3 101 10-2 10-1 100 101 IC = 400A trr 16 12 8 4 VCC = 400V VCC = 600V 100 Per Unit Base Rth(j-c) = 0.11°C/W (IGBT) Rth(j-c) = 0.13 °C/W (FWDi) Single Pulse TC = 25°C Irr 102 101 10-1 10-1 10-2 10-2 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 0 0 1000 2000 3000 4000 5000 6000 GATE CHARGE, QG, (nC) 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4