CM400DU-5F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design Dual IGBTMOD™
400 Amperes/250 Volts
TC MEASURE POINT A D T - (4 TYP.) H
G2
F
BE
C L CM
C2E1 E2 C1
E2 E1 G1
J H
U
S - NUTS (3 TYP)
Q
Q
P
N
G
K
K
K
R M
C
L
Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400DU-5F is a 250V (VCES), 400 Ampere Dual IGBTMOD™ Power Module.
Type CM Current Rating Amperes 400 VCES Volts (x 50) 5
G2 E2 C2E1 E2 C1 E1 G1
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 4.25 2.44 Millimeters 108.0 62.0 Dimensions L M N P Q R S T U Inches 0.87 0.33 0.10 0.85 0.98 0.11 M6 0.26 Dia. 0.002 Millimeters 22.0 8.5 2.5 21.5 25.0 2.8 M6 6.5 Dia. 0.05
1.14 +0.04/-0.02 29.0 +1.0/-0.5 3.66± 0.01 1.88± 0.01 0.67 0.16 0.24 0.59 0.55 93.0± 0.25 48.0± 0.25 17.0 4.0 6.0 15.0 14.0
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-5F Trench Gate Design Dual IGBTMOD™ 400 Amperes/250 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM400DU-5F -40 to 150 -40 to 125 250 ± 20 400 800* 400 800* 890 40 40 400 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 40mA, VCE = 10V IC = 400A, VGE = 10V, Tj = 25°C IC = 400A, VGE = 10V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage* VCC = 100V, IC = 400A, VGE = 10V IE = 400A, VGE = 0V Min. – – 3.0 – – – – Typ. – – 4.0 1.2 1.1 1500 – Max. 1.0 0.5 5.0 1.7 – – 2.0 Units mA µA Volts Volts Volts nC Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 100V, IC = 400A, VGE1 = VGE2 = 10V, RG = 6.3 , Resistive Load Switching Operation IE = 400A IE = 400A VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 16.0 Max. 110 7.0 3.8 850 400 1100 500 300 – Units nf nf nf ns ns ns ns ns µC
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c´)Q Rth(c-f) Test Conditions Per IGBT 1/2 Module Per FWDi 1/2 Module Per IGBT 1/2 Module* Per Module, Thermal Grease Applied Min. – – – – Typ. – – – 0.04 Max. 0.14 0.24 0.08 – Units °C/W °C/W °C/W °C/W
2
* TC measured point is just under chip.
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-5F Trench Gate Design Dual IGBTMOD™ 400 Amperes/250 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
800
COLLECTOR CURRENT, IC, (AMPERES)
540 480
VGE = 15V
6.5
640
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
T j = 2 5o C
10 8
800
6.25 VCE = 10V Tj = 25°C Tj = 125°C
2.0
VGE = 15V Tj = 25°C Tj = 125°C
1.6 1.2 0.8 0.4
6 5.75
480
320
5.5
320 160 0
160
5.25 5
0 0 1 2 3 4 5
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0 0 2 4 6 8 10 0 160 320 480 640 800
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
103
Tj = 25°C
102
Tj = 25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
Cies
8 6 4 2
EMITTER CURRENT, IE, (AMPERES)
101
Coes
102
IC = 800A IC = 400A IC = 160A
100
Cres
VGE = 0V f = 1MHz
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
101 0.6
0.8
1.0
1.2
1.4
1.6
1.8
10-1 10-1
100
101
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
103
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
REVERSE RECOVERY TIME, trr, (ns)
td(off) td(on) tf tr
103
103
20
IC = 400A
16 12 8 4
SWITCHING TIME, (ns)
VCC = 50V
trr Irr
102
102
102
VCC = 100V
VCC = 100V VGE = ±10V RG = 6.3 Ω Tj = 125°C
VCC = 100V VGE = ±10V RG = 6.3 Ω Tj = 125°C
101 101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
101 101
102
EMITTER CURRENT, IE, (AMPERES)
101 103
0 0 500 1000 1500 2000 2500 3000
GATE CHARGE, QG, (nC)
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-5F Trench Gate Design Dual IGBTMOD™ 400 Amperes/250 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
10-3 101
10-2
10-1
100
101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-3 101
10-2
10-1
100
101
100
Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.14°C/W
100
Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.24°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
4