CM400DY-12NF

CM400DY-12NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ NF-Series Module 400 Amperes/600 Volts TC MEASURED POINT (BASEPLATE) A F W F X G2 G H G B E2 E N C2E1 E2 C1 E1 G1 L (4 PLACES) K K D K M NUTS (3 PLACES) P Q P Q P T THICK U WIDTH S C V LABEL R Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400DY-12NF is a 600V (VCES), 400 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 400 VCES Volts (x 50) 12 G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H K L M Inches 4.25 2.44 1.18+0.04/-0.02 3.66±0.01 1.89±0.01 0.98 0.24 0.59 0.55 0.26 Dia. M6 Metric Millimeters 108.0 62.0 30.0+1.0/-0.5 93.0±0.25 48.0±0.25 25.0 6.0 15.0 14.0 Dia. 6.5 M6 Dimensions N P Q R S T U V W X Inches 1.18 0.71 0.28 0.87 0.33 0.02 0.110 0.16 0.85 0.94 Millimeters 30.0 18.0 7.0 22.2 8.5 0.5 2.8 4.0 21.5 24.0 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DY-12NF Dual IGBTMOD™ NF-Series Module 400 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E Short) Gate-Emitter Voltage (C-E Short) Collector Current*** (DC, TC' = 92°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) . Symbol Tj Tstg VCES VGES IC ICM IE IEM PC — — — VISO CM400DY-12NF –40 to 150 –40 to 125 600 ±20 400 800* 400 800* 1130 40 40 400 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Total Gate Charge Emitter-Collector Voltage** Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 40mA, VCE = 10V IC = 400A, VGE = 15V, Tj = 25°C IC = 400A, VGE = 15V, Tj = 125°C VCC = 300V, IC = 400A, VGE = 15V IE = 400A, VGE = 0V Min. — — 5.0 — — — — Typ. — — 6.0 1.7 1.7 1600 — Max. 1.0 0.5 7.5 2.2 — — 2.6 Units mA µA Volts Volts Volts nC Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr VCC = 300V, IC = 400A, VGE1 = VGE2 = 15V, RG = 3.1Ω, Inductive Load Switching Operation, VCE = 10V, VGE = 0V Test Conditions Min. — — — — — — — — — Typ. — — — — — — — — 6.8 Max. 60 7.3 2.4 300 200 450 300 250 — Units nf nf nf ns ns ns ns ns µC Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Qrr IE = 400A *Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi) ***Tc' measured point is just under the chips. If this vaule is used, Rth(f-a) should be measured just under the chips . 2 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DY-12NF Dual IGBTMOD™ NF-Series Module 400 Amperes/600 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance External Gate Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(c-f) RG Test Conditions Per IGBT 1/2 Module, TC Reference Point per Outline Drawing Per FWDi 1/2 Module, TC Reference Point per Outline Drawing Per IGBT 1/2 Module, TC Reference Point Under Chips Per 1/2 Module, Thermal Grease Applied — 1.6 0.04 — — 16 °C/W Ω — — 0.066 °C/W — — 0.19 °C/W Min. — Typ. — Max. 0.11 Units °C/W OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 800 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 13 15 Tj = 25oC 12 4 10 VGE = 15V Tj = 25°C Tj = 125°C Tj = 25°C IC = 800A IC = 400A IC = 160A COLLECTOR CURRENT, IC, (AMPERES) 600 3 8 6 4 2 0 400 11 2 200 8 10 1 9 0 0 2 4 6 8 10 0 0 200 400 600 800 6 8 10 12 14 16 18 20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 102 Cies 103 td(off) td(on) tf SWITCHING TIME, (ns) 101 Coes 102 tr 102 100 Cres 101 Tj = 25°C Tj = 125°C VGE = 0V 101 0 1 2 3 4 5 10-1 10-1 100 101 102 100 101 VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive Load 102 COLLECTOR CURRENT, IC, (AMPERES) 103 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DY-12NF Dual IGBTMOD™ NF-Series Module 400 Amperes/600 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE VS. VGE SWITCHING LOSS, ESW( on), ESW( off), (mJ/PULSE) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 103 REVERSE RECOVERY TIME, trr, (ns) GATE-EMITTER VOLTAGE, VGE, (VOLTS) VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive Load 103 20 16 12 8 4 0 IC = 400A 102 VCC = 200V VCC = 300V VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive Load C Snubber at Bus 102 102 101 Irr trr 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 103 ESW(on) ESW(off) 0 500 1000 1500 2000 2500 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 GATE CHARGE, QG, (nC) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth( j-c') Zth = Rth • (NORMALIZED VALUE) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) SWITCHING LOSS, ESW( on), ESW( off), (mJ/PULSE) 102 100 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 10-1 101 VCC = 300V VGE = ±15V IC = 400A Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 10-2 Single Pulse TC = 25°C Per Unit Base = Rth( j-c) = 0.11°C/W (IGBT) Rth( j-c) = 0.19°C/W (FWDi) 10-1 10-2 100 100 101 GATE RESISTANCE, RG, (Ω) 102 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4