CM400DY-66H

MITSUBISHI HVIGBT MODULES CM400DY-66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-66H q IC ................................................................... 400A q VCES ....................................................... 3300V q Insulated Type q 2-elements in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 57±0.25 4 - M8 NUTS 20 C2 E1 C2 124±0.25 140 40 E2 C1 G1 E1 E1 C2 G2 E2 CM C1 E2 E1 CIRCUIT DIAGRAM E2(C1) G1 G2 C2 6 - φ 7 MOUNTING HOLES 24.5 53.6 61.5 15 5.7 15 38 7.2 5 - M4 NUTS 36.3 48.8 18 39.5 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 28 5 30 LABEL MITSUBISHI HVIGBT MODULES CM400DY-66H . HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C, IGBT part Conditions Ratings 3300 ±20 400 800 400 800 3400 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W °C °C V N·m N·m N·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VCE = V CES, V GE = 0V IC = 40mA, VCE = 10V VGE = VGES , VCE = 0V Tj = 25°C IC = 400A, VGE = 15V Tj = 125 °C VCE = 10V VGE = 0V VCC = 1650V, IC = 400A, VGE = 15V VCC = 1650V, IC = 400A VGE1 = VGE2 = 15V RG = 7.5Ω Resistive load switching operation IE = 400A, VGE = 0V IE = 400A die / dt = –800A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to fin, conductive grease applied (Per 1/2 module) Limits Min — 4.5 — — — — — — — — — — — — — — — — — Typ — 6.0 — 4.40 4.80 40 4.0 1.2 1.9 — — — — 3.30 — 100 — — 0.016 Max 5 7.5 0.5 5.72 — — — — — 1.00 2.00 2.00 1.00 4.29 1.20 — 0.036 0.072 — Unit mA V µA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W (Note 4) Pulse width and repetition rate should be such that the device junction temp. (Tj ) does not exceed Tjmax rating. IE, VEC, t rr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj ) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 MITSUBISHI HVIGBT MODULES CM400DY-66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 800 Tj=25°C VGE=13V VGE=14V VGE=15V 800 TRANSFER CHARACTERISTICS (TYPICAL) VCE=10V COLLECTOR CURRENT IC (A) VGE=11V COLLECTOR CURRENT IC (A) VGE=12V 600 600 400 VGE=20V VGE=10V 400 200 VGE=9V VGE=8V VGE=7V 10 8 200 Tj = 25°C Tj = 125°C 0 0 2 4 6 0 0 4 8 12 16 20 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE=15V COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 8 10 Tj = 25°C IC = 800A IC = 400A 6 8 6 4 4 IC = 160A 2 Tj = 25°C Tj = 125°C 2 0 0 200 400 600 800 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) EMITTER CURRENT IE (A) 104 7 5 3 2 103 7 5 3 2 Tj=25°C 102 7 5 3 2 101 7 5 3 2 Cies Coes 102 7 5 3 2 101 0 1 2 3 4 5 100 Cres 7 5 3 VGE = 0V, Tj = 25°C 2 Cies, Coes : f = 100kHz : f = 1MHz Cres –1 10 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2000 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI HVIGBT MODULES CM400DY-66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 5 REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 101 7 5 Irr 3 2 100 7 5 trr 3 2 102 7 5 3 2 23 5 101 103 7 5 REVERSE RECOVERY CURRENT Irr (A) Feb. 2000 SWITCHING TIMES (µs) VCC = 1650V, VGE = ±15V 3 RG = 7.5Ω, Tj = 125°C 2 Inductive load 100 7 5 3 2 10–1 7 5 td(off) td(on) tr tf 5 7 102 23 5 7 103 23 5 10–1 3 VCC = 1650V, Tj = 125°C 2 Inductive load VGE = ±15V, RG = 7.5Ω 5 7 102 23 5 7 103 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) Single Pulse TC = 25°C Rth(j – c) = 0.072°C/W (Per 1/2 module) 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 Single Pulse TC = 25°C Rth(j – c) = 0.036°C/W (Per 1/2 module) 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) VGE – GATE CHARGE (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) VCC = 1650V IC = 400A 16 12 8 4 0 0 1000 2000 3000 4000 GATE CHARGE QG (nC)