CM400HA-28H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Single IGBTMOD™ H-Series Module
400 Amperes/1400 Volts
A B H J F K
Q - THD (2 TYP.) C D J
R - THD (2 TYP.)
M L
P - DIA. (4 TYP.)
E G
Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400HA-28H is a 1400V (VCES), 400 Ampere Single IGBTMOD™ Power Module.
Type CM Current Rating Amperes 400 VCES Volts (x 50) 28
N
E E G
C
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 4.21 3.661± 0.01 2.44 1.89± 0.01 1.14 Millimeters 107.0 93.0± 0.25 62.0 48.0± 0.25 29.0 Dimensions J K L M N P Q R Inches 0.79 0.69 0.63 0.35 0.28 0.26 Dia. M6 Metric M4 Metric Millimeters 20.0 17.5 16.0 9.0 7.0 Dia. 6.5 M6 M4
1.42+0.04/-0.02 36.0+1.0/-0.5
1.02+0.04/-0.2 25.8+1.0/-0.5 0.94 24.0
207
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400HA-28H Single IGBTMOD™ H-Series Module 400 Amperes/1400 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M6 Terminal Screws Max. Mounting Torque M6 Mounting Screws Module Weight (Typical) V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd – – – VRMS
CM400HA-28H –40 to 150 –40 to 125 1400 ± 20 400 800* 400 800* 2800 26 26 400 2500
Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 40mA, VCE = 10V IC = 400A, VGE = 15V IC = 400A, VGE = 15V, Tj = 150°C Total Gate Charge Diode Forward Voltage VCC = 600V, IC = 400A, VGE = 15V IE = 400A, VGE = 0V Min. – – 5.0 – – – – Typ. – – 6.5 3.1 2.95 2040 – Max. 2.0 0.5 8.0 4.2** – – 3.8 Units mA
µA
Volts Volts Volts nC Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 400A, diE/dt = –800A/µs IE = 400A, diE/dt = –800A/µs VCC = 800V, IC = 400A, VGE1 = VGE2 = 15V, RG = 0.78Ω VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 4.0 Max. 80 28 16 300 500 350 500 300 – Units nF nF nF ns ns ns ns ns
Diode Reverse Recovery Time Diode Reverse Recovery Charge
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.045 0.09 0.040 Units °C/W °C/W °C/W
208
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400HA-28H Single IGBTMOD™ H-Series Module 400 Amperes/1400 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
800
COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES)
800
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
5
VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C
640
15 Tj = 25oC VGE = 20V
13
12
640
4
11
480
480
3
320
10
320
2
160
7
9 8
160 0
1
0 0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0 0 4 8 12 16 20 0 160 320 480 640 800
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
103
Tj = 25°C Tj = 25°C IC = 800A IC = 400A
EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF)
102
Cies
8
101
Coes
6
102
4
Cres
100
2
IC = 160A
VGE = 0V f = 1MHz
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
101 1.0
1.5
2.0
2.5
3.0
3.5
4.0
10-1 10-1
100
101
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
103
tf t d(off)
SWITCHING TIME, (ns) REVERSE RECOVERY TIME, t rr, (ns)
103
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 400A
Irr
16
t d(on)
VCC = 600V VCC = 800V
t rr
12
102
tr
102
101
8
VCC = 800V VGE = ±15V RG = 0.78Ω Tj = 125°C
di/dt = -800A/µsec Tj = 25°C
4
101 101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
101 101
102
EMITTER CURRENT, IE, (AMPERES)
100 103
0 0 800 1600 2400 3200
GATE CHARGE, QG, (nC)
209
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400HA-28H Single IGBTMOD™ H-Series Module 400 Amperes/1400 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
100
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.045°C/W
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100
101
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100
101
100
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.09C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
210