CM600DU-5F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™ F-Series Module
600 Amperes/250 Volts
A TC Measured Point D T - (4 TYP.) H
G2
F
BE R CM
C2E1 25
C L E2 25 C1
E2
J
E1 G1
XH
S - NUTS (3 TYP)
Q
Q
P
N
G V - THICK x W - WIDE TAB (4 PLACES)
K
K
K M
C
LABEL
F
G2 E2 C2E1 E2 C1 E1 G1
Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 4.33 3.15 3.66± 0.01 2.44± 0.01 0.83 0.16 0.24 0.59 0.55 Millimeters 110.0 80.0 93.0± 0.25 62.0± 0.25 21.0 4.0 6.0 15.0 14.0 Dimensions M N P Q R S T V W X Inches 0.33 0.10 0.85 0.98 0.86 M6 0.26 Dia. 0.02 0.110 1.08 Millimeters 8.5 2.5 21.6 25.0 21.75 M6 6.5 Dia. 0.5 2.79 27.35
1.14 +0.04/-0.02 29.0 +1.0/-0.5
Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM600DU-5F is a 250V (VCES), 600 Ampere Dual IGBTMOD™ Power Module.
Type CM Current Rating Amperes 600 VCES Volts (x 50) 5
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-5F Dual IGBTMOD™ F-Series Module 600 Amperes/250 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC IC(rms) ICM IE IE(rms) IEM Pc – – – CM600DU-5F -40 to 150 -40 to 125 250 ± 20 600 350 1200* 600 350 1200* 1100 40 40 580 Units °C °C Volts Volts Amperes Amperes (rms) Amperes Amperes Amperes (rms) Amperes Watts in-lb in-lb Grams Volts
Viso 2500 * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 60mA, VCE = 10V IC = 600A, VGE = 10V, Tj = 25°C IC = 600A, VGE = 10V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** VCC = 100V, IC = 600A, VGE = 10V IE = 600A, VGE = 0V Min. – – 3.0 – – – – Typ. – – 4.0 1.2 1.1 2200 – Max. 1 0.5 5.0 1.7 – – 2.0 Units mA µA Volts Volts Volts nC Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Symbol Cies Coes Cres td(on) tr td(off) tf trr VCC = 100V, IC = 600A, VGE1 = VGE2 = 10V, RG = 4.2 , Inductive Load Switching Operation VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 20.0 Max. 170 11 5.7 850 600 1100 500 300 – Units nf nf nf ns ns ns ns ns µC
Qrr IE = 600A **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-5F Dual IGBTMOD™ F-Series Module 600 Amperes/250 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Test Conditions Per IGBT 1/2 Module Per FWDi 1/2 Module Per Module, Thermal Grease Applied Per IGBT 1/2 Module TC Reference Point Under Chip Min. – – – – Typ. – – 0.020 – Max. 0.11 0.20 – 0.05 Units °C/W °C/W °C/W °C/W
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
1200
VGE = 15V
COLLECTOR CURRENT, IC, (AMPERES)
1200
6.5 6.25 Tj = 25oC 6
COLLECTOR CURRENT, IC, (AMPERES)
2.0
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
900
8
VCE = 10V Tj = 25°C Tj = 125°C
900
1.6
VGE = 15V Tj = 25°C Tj = 125°C
1.2
600
5.75
600
0.8
5.5
300
5.25 5
300
0.4
0 0 1 2 3 4 5
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0 0 2 4 6 8 10
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
0 0 400 800 1200
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
Tj = 25°C
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) EMITTER CURRENT, IE, (AMPERES)
104
Tj = 25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
103
8
103
102
Cies
6
4
IC = 1200A IC = 240A IC = 600A
102
101
Coes VGE = 0V f = 1MHz Cres
2
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
101 0.6 0.8 1.0 1.2 1.4 1.6 1.8
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
100
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-5F Dual IGBTMOD™ F-Series Module 600 Amperes/250 Volts
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
di/dt = -600A/µsec Tj = 25°C trr Irr
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
103
td(off)
REVERSE RECOVERY TIME, trr, (ns)
103
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
td(on) tf
SWITCHING TIME, (ns)
IC = 600A
16
VCC = 50V
12 8
102
tr
102
VCC = 100V VGE = ±10V RG = 4.2 Ω Tj = 25°C Inductive Load
102
VCC = 100V
VCC = 100V VGE = ±10V RG = 4.2 Ω Tj = 125°C Inductive Load
4
101 101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
101 1 10
102
EMITTER CURRENT, IE, (AMPERES)
101 103
0 0 1500 3000 4500
GATE CHARGE, QG, (nC)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
10-3 101
10-2
10-1
100
101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-3 101
10-2
10-1
100
101
100
Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.11°C/W
100
Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.20°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
4