CM600E2Y-34H

MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600E2Y-34H q IC ................................................................... 600A q VCES ....................................................... 1700V q Insulated Type q 1-elements in a pack (for brake) APPLICATION DC choppers, Dynamic braking choppers. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 57±0.25 4 - M8 NUTS E1 E1 20 C2 G1 E1 C2 124±0.25 140 30 C1 C1 E2 CM C1 E2 E1 G1 C1 C2 G2 E2 CIRCUIT DIAGRAM 16 3 - M4 NUTS 40 53 55.2 11.85 6 - φ 7 MOUNTING HOLES 5 35 11.5 14 38 31.5 28 LABEL HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 5 MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25 °C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C, IGBT part Conditions Ratings 1700 ±20 600 1200 600 1200 6200 –40 ~ +150 –40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W °C °C V N·m N·m N·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25 °C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VCE = V CES, V GE = 0V IC = 60mA, VCE = 10V VGE = VGES , VCE = 0V Tj = 25°C IC = 600A, VGE = 15V Tj = 125 °C VCE = 10V VGE = 0V VCC = 850V, IC = 600A, V GE = 15V VCC = 850V, IC = 600A VGE1 = VGE2 = 15V RG = 3.3Ω Resistive load switching operation IE = 600A, VGE = 0V IE = 600A die / dt = –1200A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Per 1/2 module) IF = 600A, Clamp diode part IF = 600A dif / dt = –1200A / µs, Clamp diode part Junction to case, Clamp diode part Case to fin, conductive grease applied (Per 1/2 module) Min — 4.5 — — — — — — — — — — — — — — — — — — — — — — Limits Typ — 5.5 — 2.75 3.30 70 10.0 3.8 3.3 — — — — 2.40 — 100 — — 0.016 2.50 — 100 — 0.016 Max 12 6.5 0.5 3.58 — — — — — 1.20 1.50 2.00 0.60 3.12 2.00 — 0.020 0.064 — 3.25 2.00 — 0.064 — Unit mA V µA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W V µs µC K/W K/W (Note 4) Pulse width and repetition rate should be such that the device junction temp. (Tj ) does not exceed Tjmax rating. IE, VEC, t rr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj ) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1200 Tj = 25°C VGE = 14V 1000 VGE = 15V VGE = 20V 800 VGE = 12V VGE = 11V VGE = 13V VGE = 10V TRANSFER CHARACTERISTICS (TYPICAL) 1200 VCE = 10V COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 1000 800 600 400 200 0 Tj = 25°C Tj = 125°C 600 400 200 0 VGE = 9V VGE = 8V VGE = 7V 0 2 4 6 8 10 0 4 8 12 16 20 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE = 15V COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 10 Tj = 25°C IC = 1200A 4 8 3 6 IC = 600A 2 4 1 Tj = 25°C Tj = 125°C 2 IC = 240A 0 0 200 400 600 800 1000 1200 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 7 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) EMITTER CURRENT IE (A) 104 7 5 3 2 Tj = 25°C 103 7 VGE = 0V, Tj = 25°C 5 Cies, Coes : f = 100kHz 3 Cres : f = 1MHz 2 102 7 5 3 2 Cies 102 7 5 3 2 101 101 7 5 3 2 Coes Cres 0 1 2 3 4 5 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2000 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 5 REVERSE RECOVERY TIME trr (µs) SWITCHING TIMES (µs) VCC = 850V, VGE = ±15V 3 RG = 3.3Ω, Tj = 125°C 2 Inductive load 100 7 5 3 2 10–1 7 5 td(off) td(on) tr tf 5 7 102 23 5 7 103 23 5 10–1 7 5 5 7 102 23 5 7 103 23 5 102 7 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) Single Pulse TC = 25°C Rth(j – c) = 0.080°C/W (Per 1/2 module) 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 Single Pulse TC = 25°C Rth(j – c) = 0.032°C/W (Per 1/2 module) 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) VGE – GATE CHARGE (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) VCC = 850V IC = 600A 16 12 8 4 0 0 1000 2000 3000 4000 5000 GATE CHARGE QG (nC) Feb. 2000 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 850V, Tj = 25°C 3 Inductive load 3 2 VGE = ±15V, RG = 3.3Ω 2 trr 100 103 7 7 5 5 Irr 3 3 2 2