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CM600HA-24A

CM600HA-24A

  • 厂商:

    POWEREX(鑫鸿)

  • 封装:

  • 描述:

    CM600HA-24A - Single IGBTMOD A-Series Module - Powerex Power Semiconductors

  • 数据手册
  • 价格&库存
CM600HA-24A 数据手册
CM600HA-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Single IGBTMOD™ A-Series Module 600 Amperes/1200 Volts H J K G F E D W - DIA. (4 TYP.) AE AG C AF Y X Y Z E E C N PQ ML G AB AA K B A C D AF AH AJ R V -THD. (2 TYP.) U - THD. (2 TYP.) T AC AD S E E C G Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ DC Chopper £ Inverter £ UPS £ Forklift Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600HA-24A is a 1200V (VCES), 600 Ampere Single IGBTMOD™ Power Module. Type CM Current Rating Amperes 600 VCES Volts (x 50) 24 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q R S Inches 4.25 3.66±0.01 0.63 0.30 0.69 1.14 0.79 0.94 0.55 0.24 2.44 1.89±0.01 0.39 0.39 0.51 0.33 Millimeters 108.0 93.0±0.25 16.0 7.5 17.5 29.0 20.0 24.0 13.9 6.0 62.0 48.0±0.25 10.0 20.0 23.0 8.5 Dimensions T U V W X Y Z AA AB AC AD AE AF AG AH AJ Inches M6 Metric M4 Metric 0.256 Dia. 0.79 0.35 0.43 0.53 0.27 0.98 1.38 0.45 0.2 0.25 0.12 0.32 Millimeters M6 M4 6.5 Dia. 20.0 9.0 11.0 13.55 7.0 25.0 35.0 11.5 5.0 6.5 3.2 8.2 1.02+0.04/-0.02 25.8+1/-0.5 1.42+0.04/-0.02 36.0+1/-0.5 01/10 Rev. 1 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600HA-24A Single IGBTMOD™ A-Series Module 600 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E Short) Gate-Emitter Voltage (C-E Short) Collector Current (DC, TC = 87°C)*4 Peak Collector Current (Pulse, Repetitive)*2 Maximum Collector Dissipation (TC = 25°C)*2,*4 Emitter Current (TC = 25°C) Peak Emitter Current (Pulse, Repetitive)*2 Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Mounting Torque, M4 G(E) Terminal Weight Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM PC IE* 1 CM600HA-24A –40 to 150 –40 to 125 1200 ±20 600 1200 3670 600 1200 26 26 13 480 2500 Units °C °C Volts Volts Amperes Amperes Watts Amperes Amperes in-lb in-lb in-lb Grams Volts IEM*1 — — — — VISO Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Inductive Load Switch Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol ICES IGES VGE(th) VCE(sat) |γfs| Cies Coes Cres QG td(on) tr td(off) tf trr* 1 Test Conditions VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V IC = 60mA, VCE = 10V IC = 600A, VGE = 15V, Tj = 25°C*3 IC = 600A, VGE = 15V, Tj = 125°C*3 IC = 600A, VCE = 10V*3 VCE = 10V, VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A, VGE = ±15V, RG = 0.52Ω, Inductive Load IE = 600A IE = 600A, VGE = 0V*3 Min. — — 6.0 — — 120 — — — — — — — — — — — 0.52 Typ. — — 7.0 2.1 2.4 — — — — 3000 — — — — — 19.0 — — Max. 1.0 1.5 8.0 3.0 — — 105 9 2.0 — 660 190 700 350 250 — 3.8 7.8 Units mA µA Volts Volts Volts S nf nf nf nC ns ns ns ns ns µC Volts Ω Diode Reverse Recovery Time Diode Reverse Recovery Charge Emitter-Collector Voltage External Gate Resistance *1 *2 *3 *4 Qrr*1 VEC*1 RG Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips. 2 01/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600HA-24A Single IGBTMOD™ A-Series Module 600 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT* 4 Min. — — — Typ. — — 0.02 Max. 0.034 0.051 — Units °C/W °C/W °C/W Per FWDi*4 Case to Heatsink, Thermal Grease Applied*4,*5 *4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips. *5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT, IC, (AMPERES) 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 13 Tj = 25°C 12 4 10 VGE = 15V Tj = 25°C Tj = 125°C Tj = 25°C IC = 1200A 900 3 8 6 4 2 0 IC = 240A 600 11 2 IC = 600A 300 10 1 9 0 0 2 4 6 8 10 0 0 300 600 900 1200 6 8 10 12 14 16 18 20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 103 103 td(off) tf td(on) 103 SWITCHING TIME, (ns) 102 Cies 101 Coes Cres VGE = 0V 102 tr VCC = 600V VGE = 15V RG = 0.52Ω Tj = 125°C Inductive Load 102 Tj = 25°C Tj = 125°C 100 101 0 1 2 3 4 5 10-1 10-1 100 101 102 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 01/10 Rev. 1 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600HA-24A Single IGBTMOD™ A-Series Module 600 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 103 REVERSE RECOVERY, Irr, trr, (ns) GATE-EMITTER VOLTAGE, VGE, (VOLTS) VCC = 400V VCC = 600V SWITCHING LOSS, (mJ/PULSE) VCC = 600V VGE = 15V RG = 0.52W Tj = 25°C Inductive Load 20 16 12 8 4 0 IC = 600A 102 Eoff Err 102 101 Eon VCC = 600V VGE = 15V RG = 0.52W Tj = 125°C Inductive Load Irr trr 101 101 102 EMITTER CURRENT, IE, (AMPERES) 103 0 900 1800 2700 3600 4500 100 101 GATE CHARGE, QG, (nC) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 102 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 103 SWITCHING LOSS, (mJ/PULSE) VCC = 600V VGE = 15V IC = 600A Tj = 125°C Inductive Load 100 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 Eon 10-1 102 Eoff 10-2 Err Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.034°C/W (IGBT) Rth(j-c) = 0.051°C/W (FWDi) 10-1 10-2 101 0 2 GATE RESISTANCE, RG, (W) 4 6 8 10 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4 01/10 Rev. 1
CM600HA-24A 价格&库存

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