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CM600HA-24H

CM600HA-24H

  • 厂商:

    POWEREX(鑫鸿)

  • 封装:

  • 描述:

    CM600HA-24H - Single IGBTMOD 600 Amperes/1200 Volts - Powerex Power Semiconductors

  • 数据手册
  • 价格&库存
CM600HA-24H 数据手册
CM600HA-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD™ H-Series Module 600 Amperes/1200 Volts A C Y - THD (2 TYP.) M E E C P D E U G B R T V - THD (2 TYP.) Q L G Z J S J N X - DIA. (4 TYP.) H K F Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600HA-24H is a 1200V (VCES), 600 Ampere Single IGBTMOD™ Power Module. Type CM Current Rating Amperes 600 VCES Volts (x 50) 24 W E E G C Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M Inches 4.33 3.15 3.66± 0.008 2.44± 0.008 1.57 1.42 Max. 1.14 1.00 Max. 0.96 0.94 0.83 0.71 Millimeters 110.0 80.0 93.0± 0.25 62.0± 0.25 40.0 36.0 Max. 29.0 25.5 Max. 25.0 24.5 21.0 18.0 Dimensions N P Q R S T U V W X Y Z Inches 0.69 0.61 0.51 0.49 0.45 0.43 0.35 M8 Metric 0.28 0.256 Dia. M4 Metric 0.12 Millimeters 17.5 15.5 13.0 12.5 11.5 11.0 9.0 M8 7.0 Dia. 6.50 M4 3.04 193 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-24H Single IGBTMOD™ H-Series Module 600 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M8 Terminal Screws Max. Mounting Torque M6 Mounting Screws Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd – – – VRMS CM600HA-24H –40 to 150 –40 to 125 1200 ± 20 600 1200* 600 1200* 4100 95 26 560 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 60mA, VCE = 10V IC = 600A, VGE = 15V IC = 600A, VGE = 15V, Tj = 150°C Total Gate Charge Diode Forward Voltage VCC = 600V, IC = 600A, VGS = 15V IE = 600A, VGS = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.5 2.25 3000 – Max. 2.0 0.5 7.5 3.4** – – 3.5 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 600A, diE/dt = –1200A/µs IE = 600A, diE/dt = –1200A/µs VCC = 600V, IC = 600A, VGE1 = VGE2 = 15V, RG = 2.1Ω VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 4.46 Max. 120 42 24 300 700 450 350 250 – Units nF nF nF ns ns ns ns ns Diode Reverse Recovery Time Diode Reverse Recovery Charge µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.035 0.06 0.035 Units °C/W °C/W °C/W 194 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-24H Single IGBTMOD™ H-Series Module 600 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 1000 800 600 400 200 0 0 VGE = 20V 11 1000 800 600 400 200 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 15 12 1200 VCE = 10V Tj = 25°C Tj = 125°C 5 VGE = 15V Tj = 25°C Tj = 125°C 4 3 10 9 7 8 2 1 0 0 4 8 12 16 20 0 200 400 600 800 1000 1200 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 104 Tj = 25°C Tj = 25°C IC = 1200A EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 103 8 103 102 Cies 6 IC = 600A 4 102 101 Coes 2 IC = 240A VGE = 0V f = 1MHz Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 100 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 td(off) t d(on) REVERSE RECOVERY TIME, t rr, (ns) 103 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 600A 16 SWITCHING TIME, (ns) tf VCC = 400V VCC = 600V 102 tr 102 t rr 12 102 Irr 8 VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C di/dt = -1200A/µsec Tj = 25°C 4 101 101 102 COLLECTOR CURRENT IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 103 0 0 800 1600 2400 3200 4000 4800 GATE CHARGE, QG, (nC) 195 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-24H Single IGBTMOD™ H-Series Module 600 Amperes/1200 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.03°C/W 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.06°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 196
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