CM600HB-90H

CM600HB-90H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD™ HVIGBT 600 Amperes/4500 Volts A D L S Y N L V NUTS (4 TYP) P F CM C C G E B E E Q C E G R T U NUTS (3 TYP) J K M H W (6 TYP) X C Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking C C C G E E E Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M Inches 5.12 5.51 1.50 4.48 4.88± 0.01 1.57 0.79 0.41 0.42 1.92 2.24± 0.01 1.71 Millimeters 130.0 140.0 38.0 114.0 124.0± 0.25 40.0 20.0 10.35 10.65 48.8 57.0± 0.25 43.5 Dimensions N P Q R S T U V W X Y Inches 2.42 0.59 1.57 0.20 1.16 1.10 M4 Metric M8 Metric 0.28 Dia. 0.20 0.71 Millimeters 61.5 15.0 40.0 5.2 29.5 28.0 M4 M8 Dia. 7.0 5.0 18.0 Applications: □ Traction □ Medium Voltage Drives □ High Voltage Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600HB-90H is a 4500V (VCES), 600 Ampere Single IGBTMOD™ Power Module. Type CM Current Rating Amperes 600 VCES Volts (x 50) 90 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HB-90H Single IGBTMOD™ HVIGBT 600 Amperes/4500 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (VGE = 0V) Gate-Emitter Voltage (VCE = 0V) Collector Current (Tc = 25°C) Peak Collector Current (Pulse) Diode Forward Current** (Tc = 25°C) Diode Forward Surge Current** (Pulse) Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj ≤ 125°C) Max. Mounting Torque M8 Terminal Screws Max. Mounting Torque M6 Mounting Screws Max. Mounting Torque M4 Auxiliary Terminal Screws Module Weight (Typical) Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM PC – – – – Viso CM600HB-90H -40 to 150 -40 to 125 4500 ± 20 600 1200* 600 1200* 6700 115 53 17 1.5 6000 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb kg Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 60mA, VCE = 10V IC = 600A, VGE = 15V, Tj = 25°C IC = 600A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** VCC = 2250V, IC = 600A, VGE = 15V IE = 600A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6.0 3.0 3.3 5.4 4.0 Max. 12.0 0.5 7.5 3.9* – – 5.2 Units mA µA Volts Volts Volts µC Volts * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HB-90H Single IGBTMOD™ HVIGBT 600 Amperes/4500 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 2250V, IC = 600A, VGE1 = VGE2 = 15V, RG = 15Ω Resistive Load Switching Operation IE = 600A, diE/dt = -1200A/µs IE =600A, diE/dt = -1200A/µs VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. 108 8.0 2.4 – – – – – 240* Max. – – – 2.4 2.4 6.0 1.2 1.8 – Units nF nF nF µs µs µs µs Diode Reverse Recovery Time** Diode Reverse Recovery Charge** µs µC * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance, Case to Fin Symbol Rth(j-c) Q Rth(j-c) D Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – 0.010 Max. 0.015 0.030 – Units K/W K/W K/W 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HB-90H Single IGBTMOD™ HVIGBT 600 Amperes/4500 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 6 VGE = 15V Tj = 25°C Tj = 125°C 1.2 1.0 0.8 0.6 0.4 0.2 0 10-3 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.015 K/W COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 4 3 2 1 0 0 5 4 3 2 1 0 Tj = 25°C Tj = 125°C 500 1000 1500 0 500 1000 1500 10-2 TIME, (s) 10-1 100 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) HALF-BRIDGE TURN-ON SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE TURN-OFF SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1.2 TURN-ON SWITCHING ENERGY, Eon, (J/P) 6 5 4 3 2 1 0 0 200 400 600 800 1000 1200 COLLECTOR CURRENT, IC, (AMPERES) 3.0 TURN-OFF SWITCHING ENERGY, Eoff, (J/P) 1.0 0.8 0.6 0.4 0.2 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.030 K/W VCC = 2250V VGE = ±15V RG = 15Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% 2.5 2.0 1.5 1.0 0.5 0 VCC = 2250V VGE = ±15V RG = 15Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% 0 10-3 10-2 TIME, (s) 10-1 100 0 200 400 600 800 1000 1200 COLLECTOR CURRENT, IC, (AMPERES) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) TURN-ON SWITCHING SAFE OPERATING AREA (RBSOA) (TYPICAL) DIODE REVERSE RECOVERY SAFE OPERATING AREA (TYPICAL) 0.6 REVERSE RECOVERY ENERGY, Erec, (J/P) COLLECTOR CURRENT, IC, (AMPERES) 1400 1200 1000 800 600 400 200 0 0 200 400 600 800 1000 0 1000 2000 3000 4000 5000 EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 1500 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 0.5 0.4 0.3 0.2 0.1 0 VCC = 2250V VGE = ±15V RG = 15Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% IGBT Drive Conditions 1250 1000 750 500 250 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) VCC = 3000V VGE = ±15V RG = 15Ω LS = 100nH Tj = 125°C 4