CM600HU-24F

CM600HU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Single IGBTMOD™ 600 Amperes/1200 Volts T (2 TYP) A D F G E CM R (2 TYP.) G E C L E B H S (4 TYP) J K P TC MEASURING POINT N C Q Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies E C RTC E G Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.33 3.15 3.66± 0.01 2.44± 0.01 0.22 0.57 0.53 0.96 Millimeters 110.0 80.0 93.0± 0.25 62.0± 0.25 5.5 14.5 13.5 24.5 Dimensions K L N P Q R S T Inches 1.14 0.37 Millimeters 29.0 9.5 1.34 +0.04/-0.02 34.0 +1.0/-0.5 1.02 +0.04/-0.02 26.0 +1.0/-0.5 0.85 0.16 M8 0.26 Dia. M4 21.5 4.0 M8 6.5 Dia. M4 Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM600HU-24F is a 1200V (VCES), 600 Ampere Single IGBTMOD™ Power Module. Type CM Current Rating Amperes 600 VCES Volts (x 50) 24 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-24F Trench Gate Design Single IGBTMOD™ 600 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C) Mounting Torque, M8 Main Terminal Mounting Torque, M6 Mounting Mounting Torque, M4 Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – – Viso CM600HU-24F -40 to 150 -40 to 125 1200 ± 20 600 1200* 600 1200* 1900 95 40 15 600 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VCES, VCE = 0V IC = 60mA, VCE = 10V IC = 600A, VGE = 15V, Tj = 25°C IC = 600A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** VCC = 600V, IC = 600A, VGE = 15V IE = 600A, VGE = 0V Min. – – 5 – – – – Typ. – – 6 1.8 1.9 6600 – Max. 2 80 7 2.4 – – 3.2 Units mA µA Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-24F Trench Gate Design Single IGBTMOD™ 600 Amperes/1200 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 600A, VGE1 = VGE2 = 15V, RG = 1.0 , Inductive Load Switching Operation IE = 600A VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 43.2 Max. 230 10 6 300 150 800 300 500 – Units nf nf nf ns ns ns ns ns µC Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(c-f) Test Conditions Per IGBT, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per IGBT, Tc Reference Point Under Chip Contact Thermal Resistance Per Module, Thermal Grease Applied – 0.015 – °C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Min. – Typ. Max. 0.063 Units °C/W °C/W °C/W – – 0.075 – 0.03 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-24F Trench Gate Design Single IGBTMOD™ 600 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT, IC, (AMPERES) 1000 800 600 VGE = 20V 9 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 11 15 10 9.5 3 5 Tj = 25°C 4 3 IC = 1200A 2 8.5 2 1 IC = 600A IC = 240A 400 200 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 1 8 0 0 200 400 600 800 1000 1200 COLLECTOR-CURRENT, IC, (AMPERES) 0 0 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 103 103 td(off) tf td(on) Cies 103 102 SWITCHING TIME, (ns) 102 tr 102 101 Coes VGE = 0V Cres 101 VCC = 600V VGE = ±15V RG = 1.0 Ω Tj = 125°C Inductive Load 101 0 1.0 2.0 3.0 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 100 10-1 100 101 102 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 103 REVERSE RECOVERY TIME, trr, (ns) 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 10-3 10-2 10-1 100 101 IC = 600A 16 12 8 4 VCC = 400V VCC = 600V 100 Per Unit Base Rth(j-c) = 0.063°C/W (IGBT) Rth(j-c) = 0.075°C/W (FWDi) Single Pulse TC = 25°C Irr 102 trr VCC = 600V VGE = ±15V RG = 1.0 Ω Tj = 25°C Inductive Load 102 10-1 10-1 10-2 10-2 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 103 0 0 2000 4000 6000 8000 10000 GATE CHARGE, QG, (nC) 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4 4